I kēia manawa, loaʻa iā mākou kahi limahana hana kūpono loa e lawelawe i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu ka "100% hoʻokō o ka mea kūʻai aku e kā mākou huahana a lawelawe maikaʻi loa, ke kumukūʻai kūʻai aku a me kā mākou lawelawe limahana" a hauʻoli i ka kaulana nui i waena o nā mea kūʻai aku. Me nā hale hana he nui, hiki iā mākou ke hāʻawi i nā ʻano like ʻole o ke kumukūʻai hoʻēmi GaN-Basedepitaxial ma Sic Substrates 4′′, Hoʻokipa maikaʻi mākou i nā hoa ʻoihana liʻiliʻi mai nā ʻano like ʻole o ke ola, ke manaʻolana nei e hoʻokumu i kahi ʻoihana aloha a hana pū me ʻoe a hoʻokō i kahi pahuhopu lanakila-lanakila.
I kēia manawa, loaʻa iā mākou kahi limahana hana kūpono loa e lawelawe i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu ka "100% hoʻokō o ka mea kūʻai aku e kā mākou huahana a lawelawe paha i ka maikaʻi loa, ke kumukūʻai kūʻai aku a me kā mākou lawelawe limahana" a hauʻoli i ka kaulana nui i waena o nā mea kūʻai aku. Me nā hale hana he nui, hiki iā mākou ke hāʻawi i nā ʻano like ʻoleNā Substrates GaN Kina a me ke Kiʻiʻoniʻoni GaN, Ke kakali nui nei mākou e hana pū me nā mea kūʻai aku ma ka honua holoʻokoʻa. Manaʻoʻiʻo mākou e hiki iā mākou ke hoʻomāʻona iā ʻoe me kā mākou huahana kiʻekiʻe a me ka lawelawe kūpono. Hoʻokipa maikaʻi mākou i nā mea kūʻai aku e kipa i kā mākou hui a kūʻai i kā mākou huahana.

Nā mea lawe wafer MOCVD graphite uhi SiC

Hana ʻia kā mākou mau mea hoʻopaʻa āpau i ka graphite isostatic ikaika kiʻekiʻe. E pōmaikaʻi mai ka maʻemaʻe kiʻekiʻe o kā mākou graphite - i hoʻomohala kūikawā ʻia no nā kaʻina hana paʻakikī e like me ka epitaxy, ka ulu ʻana o ke aniani, ka hoʻokomo ʻana o ka ion a me ke kālai ʻana o ka plasma, a no ka hana ʻana i nā ʻāpana LED.

Wehewehe Huahana
ʻO ka uhi ʻana o SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe kiʻekiʻe a me ke kūʻē ʻana i ka lewa oxidizing.
Hoʻopili ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

ʻĀpana

ʻO nā pono kūikawā o kā mākou mau mea hoʻopaʻa graphite i uhi ʻia me SiC e komo pū me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai kūpaʻa wela.

Mālama mākou i nā hoʻomanawanui kokoke loa i ka wā e hoʻopili ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kikoʻī kiʻekiʻe e hōʻoia i kahi ʻano susceptor like. Hana pū mākou i nā mea me nā waiwai kū'ē uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana i hoʻomehana ʻia me ka inductive. Hele mai nā ʻāpana i hoʻopau ʻia me kahi palapala hōʻoia no ka maʻemaʻe a me ka dimensional.

Noi:

Nā Hiʻohiʻona:
· Kū'ē Kū'ē Wela Maika'i Loa
· Kū'ē Kū'ē Kino Maika'i Loa
· Kū'ē Kemika Maikaʻi Loa
· Maʻemaʻe Kiʻekiʻe Loa
· Loaʻa i ke ʻano paʻakikī
· Hiki ke hoʻohana ʻia ma lalo o ka Oxidizing AtmosphereNā Waiwai Maʻamau o ka Mea Graphite Base:

I kēia manawa, loaʻa iā mākou kahi limahana hana kūpono loa e lawelawe i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu ka "100% hoʻokō o ka mea kūʻai aku e kā mākou huahana a lawelawe maikaʻi loa, ke kumukūʻai kūʻai aku a me kā mākou lawelawe limahana" a hauʻoli i ka kaulana nui i waena o nā mea kūʻai aku. Me nā hale hana he nui, hiki iā mākou ke hāʻawi i nā ʻano like ʻole o ke kumukūʻai hoʻēmi GaN-Basedepitaxial ma Sic Substrates 4′′, Hoʻokipa maikaʻi mākou i nā hoa ʻoihana liʻiliʻi mai nā ʻano like ʻole o ke ola, ke manaʻolana nei e hoʻokumu i kahi ʻoihana aloha a hana pū me ʻoe a hoʻokō i kahi pahuhopu lanakila-lanakila.
Kumukūʻai hoʻēmiNā Substrates GaN Kina a me ke Kiʻiʻoniʻoni GaN, Ke kakali nui nei mākou e hana pū me nā mea kūʻai aku ma ka honua holoʻokoʻa. Manaʻoʻiʻo mākou e hiki iā mākou ke hoʻomāʻona iā ʻoe me kā mākou huahana kiʻekiʻe a me ka lawelawe kūpono. Hoʻokipa maikaʻi mākou i nā mea kūʻai aku e kipa i kā mākou hui a kūʻai i kā mākou huahana.