Ko ngā uauatanga hangarau i roto i te whakaputa papatipu pumau i ngā anga silicon carbide kounga teitei me te mahi pumau ko:
1) Nā te mea me tipu ngā tioata i roto i te taiao hiri pāmahana teitei i runga ake i te 2000°C, he tino teitei ngā whakaritenga whakahaere pāmahana;
2) Nā te mea he nui atu i te 200 ngā hanganga tioata o te silicon carbide, engari he torutoru noa iho ngā hanganga o te silicon carbide kotahi-kiriata hei rauemi haurua-whakakotahi e hiahiatia ana, me whakahaere tika te ōwehenga silicon-ki-waro, te pikinga pāmahana tipu, me te tipu tioata i te wā o te tukanga tipu tioata. Ngā tawhā pēnei i te tere me te pēhanga rere o te hau;
3) I raro i te tikanga tuku ā-wāhanga kohu, he tino uaua te hangarau whakawhānui diameter o te tipu tioata silicon carbide;
4) He tata te pakeke o te silicon carbide ki te pakeke o te taimana, ā, he uaua ngā tikanga tapahi, huri, me te whakakanapa.
Ngā papa epitaxial SiC: he tikanga hanga mā te tikanga whakatakoto kohu matū (CVD). E ai ki ngā momo tāpiringa rerekē, ka wehea ēnei ki ngā papa epitaxial momo-n me ngā papa epitaxial momo-p. Ka taea e Hantian Tiancheng me Dongguan Tianyu o te kāinga te whakarato i ngā papa epitaxial SiC 4-inihi/6-inihi. Mō te epitaxy SiC, he uaua ki te whakahaere i roto i te mara ngaohiko teitei, ā, he nui ake te pānga o te kounga o te epitaxy SiC ki ngā taputapu SiC. Heoi anō, ko ngā kamupene matua e whā o te umanga e pupuri ana i ngā taputapu epitaxial: Axitron, LPE, TEL me Nuflare.
Te epitaxial o te waro hikoKo te wafer e pā ana ki te wafer silicon carbide e whakatipuria ana he kiriata tioata kotahi (paparanga epitaxial) me ētahi whakaritenga me te rite ki te tioata papa i runga i te papa silicon carbide taketake. Ko te tipu epitaxial e whakamahi ana i ngā taputapu CVD (Chemical Vapor Deposition, ) me ngā taputapu MBE (Molecular Beam Epitaxy) rānei. Mai i te mea ka hangaia tika ngā taputapu silicon carbide i roto i te paparanga epitaxial, ka pā tika te kounga o te paparanga epitaxial ki te mahi me te hua o te taputapu. I te piki haere tonu o te mahi ātete ngaohiko o te taputapu, ka matotoru ake te matotoru o te paparanga epitaxial e rite ana, ā, ka uaua ake te whakahaere. I te nuinga o te wā, ina tata ki te 600V te ngaohiko, ko te matotoru o te paparanga epitaxial e hiahiatia ana he tata ki te 6 microns; ina tata ki te 1200-1700V te ngaohiko, ka eke te matotoru o te paparanga epitaxial e hiahiatia ana ki te 10-15 microns. Mena ka eke te ngaohiko ki te neke atu i te 10,000 volts, me nui ake pea te matotoru o te paparanga epitaxial i te 100 microns. I te haere tonu o te matotoru o te paparanga epitaxial, ka uaua haere te whakahaere i te matotoru me te ōritetanga o te ātete me te kiato o ngā hapa.
Ngā taputapu SiC: I te ao whānui, kua hangaia ngā SBD me te MOSFET SiC 600~1700V kia ahumahi. Ka mahi ngā hua matua i ngā taumata ngaohiko i raro i te 1200V, ā, ko te nuinga o te wā ka whakamahia he takai TO. Mō te utu, ko te utu mō ngā hua SiC i te mākete o te ao he 5-6 ngā wā teitei ake i ō rātou hoa Si. Heoi, kei te heke ngā utu i te tere ā-tau o te 10%. Me te whānui haere o ngā rauemi me te hanga taputapu i roto i ngā tau 2-3 e whai ake nei, ka piki ake te tuku mākete, ka arahi ki ngā whakahekenga utu anō. E matapaetia ana ina eke te utu ki te 2-3 ngā wā i ō ngā hua Si, ko ngā painga e puta mai ana i te whakaiti i ngā utu pūnaha me te whakapai ake i te mahi ka akiaki haere i te SiC ki te noho i te wāhi mākete o ngā taputapu Si.
Ko ngā takai tuku iho e hangai ana ki ngā papa hangai-silicon, ko ngā rauemi semiconductor o te whakatupuranga tuatoru e hiahia ana ki tētahi hoahoa hou rawa atu. Mā te whakamahi i ngā hanganga takai hangai-silicon tuku iho mō ngā taputapu hiko whānui-rohe ka puta mai ngā take me ngā wero hou e pā ana ki te auau, te whakahaere wera, me te pono. He tairongo ake ngā taputapu hiko SiC ki te kaha pararutiki me te inductance. Ki te whakatauritea ki ngā taputapu Si, he tere ake te whakawhiti o ngā maramara hiko SiC, ka taea ai te arahi ki te overshoot, te oscillation, te pikinga o ngā ngaronga whakawhiti, tae atu ki ngā hapa o te taputapu. Hei tāpiri, ka mahi ngā taputapu hiko SiC i ngā pāmahana teitei ake, e hiahia ana ki ngā tikanga whakahaere wera matatau ake.
He maha ngā momo hanganga kua whakawhanakehia i roto i te mara o te takai hiko haurua-whānui. Kāore e pai ana te takai waeine hiko tuku iho e hangai ana ki te Si. Hei whakaoti rapanga o ngā tawhā pirinoa teitei me te ngoikore o te whai huatanga o te whakamarara wera o te takai waeine hiko tuku iho e hangai ana ki te Si, ka whakamahia e te takai waeine hiko SiC te hononga ahokore me te hangarau whakamatao taha-rua ki roto i tōna hanganga, ā, ka whakamahia hoki ngā rauemi papa me te kawe wera pai ake, ā, ka ngana ki te whakauru i ngā pūnga wetewete, ngā pūoko pāmahana/au, me ngā ara iahiko taraiwa ki roto i te hanganga waeine, ā, ka whakawhanakehia he maha ngā hangarau takai waeine rerekē. Heoi anō, he nui ngā arai hangarau ki te hanga taputapu SiC me te nui o ngā utu whakaputa.
Ka hangaia ngā taputapu karawiti silicon mā te whakatakoto i ngā paparanga epitaxial ki runga i te papa karawiti silicon mā te CVD. Ko te tukanga ko te horoi, te whakahāora, te whakaahua-ipurangi, te whakairo, te tango i te kaitao-whakaahua, te whakaurunga katote, te whakatakoto matū o te kawakawa silicon, te whakakanapa, te pupuhi, me ngā mahi tukatuka i muri mai hei hanga i te hanganga taputapu ki runga i te papa tioata kotahi SiC. Ko ngā momo matua o ngā taputapu hiko SiC ko ngā diode SiC, ngā transistors SiC, me ngā kōwae hiko SiC. Nā ngā āhuatanga pēnei i te puhoi o te tere whakaputa rauemi me ngā reiti hua iti, he nui ngā utu hanga o ngā taputapu karawiti silicon.
Hei tāpiritanga, he uauatanga hangarau anō hoki kei te hanga i ngā taputapu silicon carbide:
1) Me whakawhanake i tētahi tukanga motuhake e rite ana ki ngā āhuatanga o ngā rauemi silicon carbide. Hei tauira: He teitei te ira rewa o te SiC, ā, kāore e whai hua te horapa wera tuku iho. Me whakamahi i te tikanga tāpiringa whakatō katote me te whakahaere tika i ngā tawhā pēnei i te pāmahana, te tere whakamahana, te roa, me te rere o te hau; kāore te SiC e pai ki ngā whakarewa matū. Me whakamahi i ngā tikanga pēnei i te whakairo maroke, ā, me arotau me te whakawhanake i ngā rauemi hipoki, ngā ranunga hau, te whakahaere i te pari o te pakitara taha, te tere whakairo, te taratara o te pakitara taha, me ētahi atu;
2) Ko te hanga i ngā irahiko whakarewa i runga i ngā papa silicon carbide me whai ātete whakapā i raro i te 10-5Ω2. Ko ngā rauemi irahiko e tutuki ana i ngā whakaritenga, arā, ko te Ni me te Al, he ngoikore te pumau wera i runga ake i te 100°C, engari he pai ake te pumau wera o te Al/Ni. Ko te ātete whakapā motuhake o te rauemi irahiko hiato /W/Au he 10-3Ω2 teitei ake;
3) He nui te ātete o te SiC ki te tapahi, ā, ko te pakeke o te SiC te tuarua o te taimana, e whakatairanga ana i ngā whakaritenga teitei ake mō te tapahi, te huri, te whakakanapa me ētahi atu hangarau.
Heoi anō, he uaua ake te hanga i ngā taputapu hiko waro silicon triangle. E ai ki ngā hanganga taputapu rerekē, ka taea te wehewehe i ngā taputapu hiko waro silicon ki ngā taputapu papatahi me ngā taputapu triangle. He pai te ōritetanga o ngā waeine o ngā taputapu hiko waro silicon planar me te tukanga hanga ngāwari, engari he ngāwari ki te pānga JFET, ā, he nui te kaha pirinoa me te ātete ā-tūnga. Ki te whakatauritea ki ngā taputapu papatahi, he iti ake te ōritetanga o ngā waeine o ngā taputapu hiko waro silicon triangle, ā, he uaua ake te tukanga hanga. Heoi anō, he pai te hanganga triangle ki te whakanui ake i te kiato o te waeine o te taputapu, ā, he iti ake te tūponotanga ki te whakaputa i te pānga JFET, he mea pai ki te whakaoti rapanga o te nekenekehanga hongere. He pai ngā āhuatanga pēnei i te iti o te ātete ā-tūnga, te iti o te kaha pirinoa, me te iti o te whakapaunga hiko whakawhiti. He nui ngā painga utu me te mahi, ā, kua noho hei huarahi matua mō te whanaketanga o ngā taputapu hiko waro silicon. E ai ki te paetukutuku mana o Rohm, ko te hanganga ROHM Gen3 (hanganga Triangle Gen1) he 75% noa iho o te horahanga maramara Gen2 (Plannar2), ā, kua whakaitihia te ātete ā-tūnga o te hanganga ROHM Gen3 mā te 50% i raro i te rahi maramara kotahi.
Ko te 47%, 23%, 19%, 6% me te 5% o ngā utu hanga o ngā taputapu silicon carbide, ko ngā utu mō te epitaxy, te front-end, te R&D me ētahi atu, ia.
Hei whakamutunga, ka arotahi mātou ki te wawahi i ngā arai hangarau o ngā papa i roto i te mekameka ahumahi silicon carbide.
He rite te tukanga whakaputa o ngā papa hanga silicon carbide ki tērā o ngā papa hanga-silicon, engari he uaua ake.
Ko te tukanga hanga o te papa hanga silicon carbide ko te hanganga rauemi mata, te tipu tioata, te tukatuka ingot, te tapahi ingot, te huri wafer, te oro, te horoi me etahi atu hononga.
Ko te wāhanga tipu tioata te uho o te tukanga katoa, ā, mā tēnei taahiraa e whakatau ngā āhuatanga hiko o te papa matūriki karāhe silicon.
He uaua te whakatipu rauemi silicon carbide i roto i te āhua wai i raro i ngā āhuatanga noa. Ko te tikanga whakatipu āhua kohu e rongonui ana i te mākete i ēnei rā he pāmahana whakatipu neke atu i te 2300°C, ā, me whakahaere tika te pāmahana whakatipu. He tata uaua te tirotiro i te tukanga mahi katoa. Mā te hapa iti ka taea te tango i te hua. Hei whakataurite, ko te 1600℃ anake te pāmahana e hiahiatia ana mō ngā rauemi silicon, he iti iho tēnei. He uaua anō hoki te whakarite i ngā papa silicon carbide pērā i te puhoi o te tipu tioata me ngā whakaritenga āhua tioata teitei. E 7 ki te 10 ngā rā e tipu ai te papa silicon carbide, ko te unu i te tokotoko silicon he 2 me te hawhe noa iho ngā rā e 2000. Heoi anō, ko te silicon carbide he rauemi e tuarua ana tōna pakeke ki te taimana. Ka nui te ngaro i te wā e tapahi ana, e huri ana, e whakakanapa ana, ā, ko te ōwehenga putanga he 60% noa iho.
E mōhio ana mātou ko te ia o te whanaketanga ko te whakanui ake i te rahi o ngā papa silicon carbide, i te mea ka piki haere tonu te rahi, ka piki haere ngā whakaritenga mō te hangarau whakawhānui diameter. Me whakakotahi ngā momo wāhanga whakahaere hangarau hei whakatutuki i te tipu auau o ngā tioata.
Wā tuku: Mei-22-2024