Ngā Wāhanga Epitaxial SiC

Ngā Paninga CVD Matatau mō te Tipu Epitaxial SiC

He mea hanga mō ngā tukanga taputapu haurua-haurua mana-teitei e mahi ana i raro i te ahotea wera nui (1500°C - 1700°C), ko ā mātou ārai aorangi kua pania ki te CVD SiC me te TaC, ngā kōpae amiorangi, me ngā ārai hau kua hangaia kia tino pai. I hangaia hei ārai i te whakaputanga matūriki, te pirau mata, me te whakairo hau tauhohe (H₂, SiH₄, C₃H∯), mā ā mātou paninga matatau ka roa te ora o te mahi, ka pai ake te whakahaere i te dopant, me te ōritetanga o te matotoru kiriata puta noa.Ngā papa epitaxial SiC 6-inihi me te 8-inihi.

Te Pūmautanga o te Pāmahana Tino-Teitei

Ka mau tonu te pāmahana tae atu ki te 1700°C i roto i ngā taiao whakaiti H₂/silane kino.

Te Whakataurite CTE Rōrahi

Ka whakakore i te wehewehenga o te paninga, te ngatata moroiti, me te pakaru i te wā o ngā huringa wera tere.

Te Ritenga o te Tauine Wafer 8-Inihi

Mīhini CNC tino tika i hangaia mō ngā tauhohenga SiC Epi kaha-whakaputa o te whakatupuranga hou (LPE, Aixtron, Nuflare).

Tawhā Hangarau	Uara Whakatakotoranga	Tikanga Paerewa / Whakamātautau
Ngā Kōwhiringa Rauemi Paninga	CVD SiC / Tantalum Carbide (TaC)	Papanga Herekore Parakore-Teitei
Papa Tūāpapa	Karāwhite Isostatic Parakore	Parakore Papatipu < 5 ppm
Ātete Ru Wera	Tere Arataki Delta T > 500°C	Kāore e pakaru/kāore e tihore
Te Pākari o te Mata (Ra)	≤ 0.4 μm (Whakaata Whakakanapa)	Ārai i te Piri o te Wafer me ngā Matūriki