Chotenthetsera cha Graphite Chopangidwa ndi Ukhondo Wapamwamba wa SiC Chopangidwa ndi Ukhondo

Chotenthetsera cha Graphite Chopangidwa ndi Ukhondo Wapamwamba wa SiC Chophimbidwa ndi Kapangidwe Kake Chithunzi Chodziwika

Kufotokozera Kwachidule:

Chotenthetsera cha graphite ndi mtundu wa zinthu zotenthetsera zamagetsi zomwe zimapanga kutentha potenthetsera zinthu za graphite pogwiritsa ntchito magetsi, nthawi zambiri zimapangidwa ndi graphite ndi ziwiya zadothi. Kapangidwe kake kozungulira kamatha kuyeretsa kutentha bwino ndipo kamagwiritsidwa ntchito kwambiri m'mafakitale, zomangamanga, ulimi ndi moyo watsiku ndi tsiku. Chifukwa cha kutentha kwake kwabwino komanso kukhazikika kwa kutentha kwambiri, chinthu chotenthetsera cha graphite chimagwiritsidwa ntchito kwambiri m'mafakitale.

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Tsatanetsatane wa Zamalonda

Ma tag a Zamalonda

Zinthu zazikulu za chotenthetsera cha graphite:

1. kufanana kwa kapangidwe ka kutentha.

2. kuyendetsa bwino magetsi komanso mphamvu zamagetsi zambiri.

3. kukana dzimbiri.

4. kusapha poizoni.

5. kuyera kwambiri kwa mankhwala.

6. mphamvu yayikulu yamakina.

Ubwino wake ndi wogwiritsa ntchito mphamvu moyenera, mtengo wake ndi wotsika. Titha kupanga anti-oxidation ndi graphite crucible yokhala ndi moyo wautali, graphite mold ndi zigawo zonse za graphite heater.

Magawo akuluakulu a chotenthetsera cha graphite

Kufotokozera Zaukadaulo	Semicera-M3
Kuchuluka kwa Zinthu (g/cm3)	≥1.85
Phulusa (PPM)	≤500
Kulimba kwa Pagombe	≥45
Kukana Kwapadera (μ.Ω.m)	≤12
Mphamvu Yosinthasintha (Mpa)	≥40
Mphamvu Yokakamiza (Mpa)	≥70
Kukula kwa Tirigu Wapamwamba (μm)	≤43
Koyefiyira ya Kukulitsa Kutentha Mm/°C	≤4.4*10-6

VET Energy ndi awopanga weniweni wa zinthu zopangidwa ndi graphite ndi silicon carbide zokhala ndi zokutira za CVD,akhoza kuperekazosiyanasiyanazida zopangidwira makampani opanga ma semiconductor ndi photovoltaic. OGulu lanu laukadaulo limachokera ku mabungwe apamwamba ofufuza zamkati, likhoza kupereka mayankho aukadaulo ambirizanu.

Timapanga njira zamakono nthawi zonse kuti tipereke zipangizo zamakono kwambiri,ndiagwiritsa ntchito ukadaulo wapadera wokhala ndi patent, womwe ungapangitse kuti mgwirizano pakati pa chophimba ndi substrate ukhale wolimba komanso wosasinthasintha.

FZakudya za zinthu zathu:

1. Kukana kutentha kwambiri kwa okosijeni mpaka 1700℃.
2. Kuyera kwambiri ndikufanana kwa kutentha
3. Kukana dzimbiri bwino: asidi, alkali, mchere ndi zinthu zachilengedwe.
4. Kulimba kwambiri, pamwamba pang'ono, tinthu tating'onoting'ono.
5. Moyo wautali komanso wokhalitsa

Matenda a mtima (CVD) SiC薄膜基本物理性能 Makhalidwe oyambira a CVD SiCchophimba
性质 / Katundu	典型数值 Mtengo Wamba
晶体结构 / Kapangidwe ka Crystal	Gawo la FCC β多晶，主要為（111）取向
密度 / Kuchulukana	3.21 g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Tirigu Waukulu	2 ~ 10μm
纯度 / Kuyera kwa Mankhwala	99.99995%
热容 / Kutha Kutentha	640 J·kg^-1·K^-1
升华温度 / Kutentha kwa Sublimation	2700℃
抗弯强度 / Mphamvu Yosinthasintha	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt kupindika, 1300℃
导热系数 / KutenthalKuyendetsa bwino	300W·m^-1·K^-1
热膨胀系数 / Kukulitsa Kutentha (CTE)	4.5×10^-6K^-1