Isici Sokushisa Esishisayo Esiphezulu Se-SiC Ehlanganiswe ne-Graphite Heater

Isici Esifakiwe Esifakiwe Sokushisisa Okuhlanzekile Okuphakeme Kwe-SiC Ehlanganisiwe Ye-Graphite Heater

Incazelo emfushane:

I-graphite heater iwuhlobo lwezinto zokushisa zikagesi ezikhiqiza ukushisa ngokushisisa izinto zegraphite ngogesi, ngokuvamile ezenziwe ngegraphite nezitsha zobumba. Isakhiwo sayo se-wavy singakhipha ukushisa ngokuphumelelayo futhi sisetshenziswa kabanzi embonini, ekwakhiweni, ezolimo kanye nokuphila kwansuku zonke. Ngenxa ye-conductivity yayo enhle yokushisa kanye nokuzinza okuphezulu kwezinga lokushisa, isici sokushisa se-graphite sisetshenziswa kabanzi embonini.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-heater graphite:

1. ukufana kwesakhiwo sokushisa.

2. conductivity enhle kagesi kanye nomthwalo omkhulu kagesi.

3. ukumelana nokugqwala.

4. i-inoxidizability.

5. ukuhlanzeka kwamakhemikhali aphezulu.

6. amandla aphezulu emishini.

Inzuzo iyonga amandla, inani eliphakeme kanye nokugcinwa okuphansi. Singakhiqiza i-anti-oxidation nempilo ende ye-graphite crucible, isikhunta se-graphite nazo zonke izingxenye ze-graphite heater.

Imingcele eyinhloko ye-graphite heater

Ukucaciswa Kwezobuchwepheshe	I-Semicera-M3
Ukuminyana kwenqwaba (g/cm3)	≥1.85
Okuqukethwe komlotha (PPM)	≤500
Ukuqina Kwasogwini	≥45
Ukumelana Okuqondile (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla Acindezelayo (Mpa)	≥70
Ubukhulu. Usayizi Wokusanhlamvu (μm)	≤43
I-Coefficient of Thermal Expansion Mm/°C	≤4.4*10-6

I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, linganikeza izixazululo zempahla echwepheshilekwakho.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Fukudla kwemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700℃.
2. Ukuhlanzeka okuphezulu kanyeukufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1