Silicon Carbide Yokutidwa ndi Graphite Susceptor ya LED Etching

Kufotokozera Kwachidule:

Chosungira cha silicon carbide cha LED etching (SiC tray) ndi chowonjezera chapadera cha deep silicon etching (ICP etching machine). chonyamulira cha wafer, chomwe chimadziwikanso kuti wafer carrier, silicon wafer carrier, chomwe chimadziwikanso kuti pocket wafer. Chimagwiritsidwa ntchito kwambiri mu semiconductor CVD ndi vacuum sputtering.

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Tsatanetsatane wa Zamalonda

Ma tag a Zamalonda

Chopopera chophimbidwa ndi silicon carbide ndia kiyigawo lomwe limagwiritsidwa ntchito popanga zinthu zosiyanasiyana za semiconductor.Timagwiritsa ntchito ukadaulo wathu wopangidwa ndi patent popanga susceptor yokhala ndi silicon carbide yokhala ndichiyero chapamwamba kwambiri,zabwinochophimbakufananandi moyo wabwino kwambiri wautumiki, komansokukana kwambiri mankhwala ndi mphamvu zokhazikika pa kutentha.

VET Energy ndi awopanga weniweni wa zinthu zopangidwa ndi graphite ndi silicon carbide zokhala ndi zokutira za CVD,akhoza kuperekazosiyanasiyanazida zopangidwira makampani opanga ma semiconductor ndi photovoltaic. OGulu lanu laukadaulo limachokera ku mabungwe apamwamba ofufuza zamkati, likhoza kupereka mayankho aukadaulo ambirizanu.

Timapanga njira zamakono nthawi zonse kuti tipereke zipangizo zamakono kwambiri,ndiagwiritsa ntchito ukadaulo wapadera wokhala ndi patent, womwe ungapangitse kuti mgwirizano pakati pa chophimba ndi substrate ukhale wolimba komanso wosasinthasintha.

FZakudya za zinthu zathu:

1. Kukana kutentha kwambiri kwa okosijeni mpaka 1700℃.
2. Kuyera kwambiri ndikufanana kwa kutentha
3. Kukana dzimbiri bwino: asidi, alkali, mchere ndi zinthu zachilengedwe.
4. Kulimba kwambiri, pamwamba pang'ono, tinthu tating'onoting'ono.
5. Moyo wautali komanso wokhalitsa

Matenda a mtima (CVD) SiC薄膜基本物理性能 Makhalidwe oyambira a CVD SiCchophimba
性质 / Katundu	典型数值 Mtengo Wamba
晶体结构 / Kapangidwe ka Crystal	Gawo la FCC β多晶，主要為（111）取向
密度 / Kuchulukana	3.21 g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Tirigu Waukulu	2 ~ 10μm
纯度 / Kuyera kwa Mankhwala	99.99995%
热容 / Kutha Kutentha	640 J·kg^-1·K^-1
升华温度 / Kutentha kwa Sublimation	2700℃
抗弯强度 / Mphamvu Yosinthasintha	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt kupindika, 1300℃
导热系数 / KutenthalKuyendetsa bwino	300W·m^-1·K^-1
热膨胀系数 / Kukulitsa Kutentha (CTE)	4.5×10^-6K^-1