Igikoresho cyo gushyushya cya Graphite gikozwe mu buryo bwihariye kandi busukuye cyane cya SiC

Ishusho y'ishusho y'agakoresho gashyushya ka Graphite gakozwe mu buryo bwa High Purity SiC gafite isuku nini

Ibisobanuro bigufi:

Igishyushya cya grafiti ni ubwoko bw'ibikoresho bishyushya amashanyarazi bitanga ubushyuhe binyuze mu gushyushya ibikoresho bya grafiti mu buryo bw'amashanyarazi, ubusanzwe bikozwe muri grafiti na ceramic. Imiterere yacyo imeze nk'umuraba ishobora gukuraho ubushyuhe neza kandi ikoreshwa cyane mu nganda, mu bwubatsi, mu buhinzi no mu buzima bwa buri munsi. Kubera ko itwara ubushyuhe neza kandi ikagira ubushyuhe bwinshi, icyuma gishyushya cya grafiti gikoreshwa cyane mu nganda.

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Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Ibintu by'ingenzi biranga icyuma gishyushya cya grafiti:

1. imiterere y'ubushyuhe ingana.

2. amashanyarazi meza kandi afite umuvuduko mwinshi w'amashanyarazi.

3. kurwanya ingese.

4. kudakoresha ogisijeni.

5. ubuziranenge bwinshi bwa shimi.

6. imbaraga nyinshi za mekanike.

Akamaro ni uko ingufu zikoreshwa mu buryo buciriritse, agaciro kazo kari hejuru kandi ntizibungabungwe neza. Dushobora gukora anti-oxidation no kumara igihe kirekire graphite crucible, graphite mold n'ibice byose bya graphite heater.

Ibipimo by'ingenzi bya graphite heater

Ibisobanuro bya tekiniki	Semicera-M3
Ubucucike bw'umubyimba (g/cm3)	≥1.85
Ibikubiye mu ivu (PPM)	≤500
Ubukomere bw'Inkombe	≥45
Ubudahangarwa bwihariye (μ.Ω.m)	≤12
Imbaraga zo Kongera Uburemere (Mpa)	≥40
Imbaraga zo Gukanda (Mpa)	≥70
Ingano ya Garama (μm)	≤43
Ingano y'ubushyuhe Mm/°C	≤4.4*10-6

VET Energy ni iuruganda nyarwo rukora ibikoresho bya graphite na silicon carbide byihariye hamwe n'imvange ya CVD,ishobora gutangabitandukanyeibice byihariye byo mu nganda za semiconductor na photovoltaic. OItsinda ryanyu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora gutanga ibisubizo by’ibikoresho by’umwuga.kuri wowe.

Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho,nabakoze ikoranabuhanga ryihariye rifite patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ntigishobora gutandukana cyane.

FImirire y'ibicuruzwa byacu:

1. Ubudahangarwa bw'ubushyuhe bwinshi kugeza kuri dogere 1700℃.
2. Ubuziranenge bwinshi kandiubushyuhe bungana
3. Irwanya ingese neza cyane: aside, alkali, umunyu n'ibikomoka ku bimera.
4. Ubukomere bwinshi, ubuso buto, uduce duto.
5. Igihe kirekire cyo gukora kandi kiramba kurushaho

CVD SiC薄膜基本物理性能 Imiterere y'ibanze ya CVD SiCgusiga
性质 / Umutungo	典型数值 / Agaciro Gasanzwe
晶体结构 / Imiterere ya kristu	Icyiciro cya FCC β多晶，主要为（111 ）取向
密度 / Ubucucike	3.21 g/cm³
硬度 / Ubukomere	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ubunini bw'ibinyampeke	2 ~ 10μm
纯度 / Ubuziranenge bw'ibinyabutabire	99.99995%
热容 / Ubushobozi bwo gushyuha	640 J·kg^-1·K^-1
升华温度 / Ubushyuhe bwo gushyuha	2700℃
抗弯强度 / Imbaraga zo Kongera Uburemere	415 MPa RT ifite amanota 4
杨氏模量 / Modulus y'Abana	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUbushobozi bwo kuyobora	300W·m^-1·K^-1
热膨胀系数 / Kwagura ubushyuhe (CTE)	4.5×10^-6K^-1