Element ea ho Futhumatsa ea Graphite e Hloekileng ka ho Fetisisa ea SiC e Ikhethileng

Setšoantšo se Hlahisitsoeng sa Heater ea Graphite e Koahetsoeng ka ho Fetisisa ea SiC e Hloekileng ka ho Fetisisa

Tlhaloso e Khutšoanyane:

Sefuthumatsi sa graphite ke mofuta oa thepa ea ho futhumatsa ea motlakase e hlahisang mocheso ka ho futhumatsa thepa ea graphite ka motlakase, hangata e entsoe ka graphite le letsopa. Sebopeho sa eona se nang le maqhubu se ka felisa mocheso ka katleho 'me se sebelisoa haholo indastering, kahong, temong le bophelong ba letsatsi le letsatsi. Ka lebaka la ho tsamaisa mocheso hantle le botsitso ba mocheso o phahameng, karolo ea ho futhumatsa ea graphite e sebelisoa haholo indastering.

Romella imeile ho rona Khoasolla e le PDF

Qaqiso ea Sehlahisoa

Li-tag tsa Sehlahisoa

Likarolo tse ka sehloohong tsa heater ea graphite:

1. ho tšoana ha sebopeho sa ho futhumatsa.

2. motlakase o motle le mojaro o phahameng oa motlakase.

3. ho hanyetsa ho bola.

4. ho se kgone ho ntsha oksideishene.

5. bohloeki bo phahameng ba lik'hemik'hale.

6. matla a phahameng a mechini.

Molemo ke ho boloka matla hantle, boleng bo hodimo le tlhokomelo e tlase. Re ka hlahisa anti-oxidation le graphite crucible e phelang nako e telele, hlobo ya graphite le dikarolo tsohle tsa heater ya graphite.

Litekanyetso tse ka sehloohong tsa hitara ea graphite

Tlhaloso ea Tekheniki	Semicera-M3
Bongata ba Bongata (g/cm3)	≥1.85
Dikahare tsa Molora (PPM)	≤500
Ho tiea ha lebōpo	≥45
Khanyetso e Ikhethang (μ.Ω.m)	≤12
Matla a ho Kobeha (Mpa)	≥40
Matla a Khatello (Mpa)	≥70
Boholo ba Thollo (μm)	≤43
Katoloso ea Thermal e lekanang le karolelano ea Mm/°C	≤4.4*10-6

VET Energy ke emoetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse ikhethileng tse nang le pente ea CVD,e ka fana katse fapanenglikarolo tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic. OSehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, se ka fana ka litharollo tse ling tsa lisebelisoa tsa profeshenalemolemong oa hau.

Re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele haholoanyane,leba sebelitse theknoloji e ikhethang e nang le patente, e ka etsang hore kamano pakeng tsa sekoahelo le substrate e tiee le hore e se ke ea arohana habonolo.

FMefuta ea lihlahisoa tsa rona:

1. Khanyetso ea ho chesoa ha mocheso o phahameng ho fihlela ho 1700℃.
2. Bohloeki bo phahameng leho tšoana ha mocheso
3. Ho hanyetsa mafome hantle haholo: asiti, alkali, letsoai le li-reagent tsa tlhaho.
4. Ho thatafala ho hoholo, bokaholimo bo kopaneng, dikarolwana tse nyane.
5. Bophelo ba tšebeletso e telele le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Thepa ea motheo ea 'mele ea CVD SiCsekoahelo
性质 / Thepa	典型数值 / Boleng bo Tloaelehileng
晶体结构 / Sebopeho sa kristale	Mokhahlelo oa FCC β多晶，主要為（111）取向
密度 / Botenya	3.21 g/cm³
硬度 / Bothata	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Sekala sa Lithollo	2 ~ 10μm
纯度 / Bohloeki ba Lik'hemik'hale	99.99995%
热容 / Bokgoni ba Mocheso	640 J·kg^-1·K^-1
升华温度 / Mocheso oa Sublimation	2700℃
抗弯强度 / Matla a ho Kobeha	415 MPa RT lintlha tse 4
杨氏模量 / Modulus ea Bacha	430 Gpa kobeho ea 4pt, 1300℃
导热系数 / ThermalHo khanna motlakase	300W·m^-1·K^-1
热膨胀系数 / Katoloso ea Thermal (CTE)	4.5×10^-6K^-1