Ubunini bwa High Purity CVD Solid SiC Bulk

Ishusho ya High Purity CVD Solid SiC Bulk igaragara

Ibisobanuro bigufi:

Iterambere ryihuse rya kristu imwe ya SiC ikoresheje amasoko menshi ya CVD-SiC (Chemical Vapor Deposition - SiC) ni uburyo busanzwe bwo gutegura ibikoresho bya kristu imwe ya SiC byiza cyane. Izi kristu imwe zishobora gukoreshwa mu bikorwa bitandukanye, harimo ibikoresho by'ikoranabuhanga bikoresha ingufu nyinshi, ibikoresho bya optoelectronic, sensor, n'ibikoresho bya semiconductor.

Ohereza imeri kuri twe Kuramo nka PDF

Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

VET Energy ikoresha ubuziranenge buhanitse cyanekarubide ya silikoni (SiC)byakozwe n'imyuka y'ubumara(indwara y'umutima)nk'isoko ry'ibikoresho byo guhingaKristale za SiChakoreshejwe uburyo bwo gutwara umwuka ushyushye (PVT). Muri PVT, ibikoresho bikomokaho bishyirwa muumusarabamaze ishyirwa ku gikoresho cy'imbuto.

Kugira ngo ukore isuku yo mu rwego rwo hejuru, hakenewe isoko ifite isuku nyinshiKristale za SiC.

VET Energy yibanda ku gutanga SiC y’uduce duto kuri PVT kuko ifite ubucucike bwinshi kurusha uduce duto twakozwe no gutwika gaze zirimo Si na C. Bitandukanye no gutwika gaze mu buryo busanzwe cyangwa uburyo Si na C zikora, ntabwo isaba itanura ryabugenewe ryo gutwika cyangwa intambwe yo gutwika ifata igihe kinini mu itanura rikura. Iyi mashini y’uduce duto ifite umuvuduko uhoraho wo guhumeka, ibyo bigatuma habaho uburinganire hagati y’imashini zikoresha Si na C.

Intangiriro:
1. Tegura isoko y'ibice bya CVD-SiC: Ubwa mbere, ugomba gutegura isoko y'ibice bya CVD-SiC byiza cyane, ubusanzwe bifite ubuziranenge bwinshi n'ubucucike bwinshi. Ibi bishobora gutegurwa hakoreshejwe uburyo bwo kubika umwuka w'ibinyabutabire (CVD) mu gihe habayeho imiterere ikwiye.

2. Gutegura substrate: Hitamo substrate ikwiye nk'substrate yo gukura kwa SiC single crystal. Ibikoresho bikunze gukoreshwa birimo silicon carbide, silicon nitride, nibindi, bihuye neza na SiC single crystal ikura.

3. Gushyushya no gushyushya: Shyira isoko ya CVD-SiC block na substrate mu itanura rishyushye cyane kandi utange uburyo bukwiye bwo gushyushya. Gushyushya bivuze ko iyo ubushyuhe bwinshi, isoko ya block ihinduka mu buryo butaziguye kuva ku buryo bukomeye kugera ku mwuka w'umwuka, hanyuma ikongera gukonja ku buso bwa substrate kugira ngo ikore kristu imwe.

4. Kugenzura ubushyuhe: Mu gihe cyo gukoresha sublimation, ubushyuhe n'ikwirakwizwa ry'ubushyuhe bigomba kugenzurwa neza kugira ngo habeho sublimation y'isoko ry'ibice bya bloc n'ikura rya kristu imwe. Kugenzura ubushyuhe bikwiye bishobora kugera ku bwiza n'umuvuduko mwiza wa kristu.

5. Kugenzura ikirere: Mu gihe cyo gushyira mu kirere ibintu, ikirere cy’ibisubizo nacyo kigomba kugenzurwa. Gazi idafite isuku nyinshi (nka argon) ikoreshwa nk'umwuka utwara ibintu kugira ngo igumane igitutu n'ubuziranenge bikwiye kandi ikumire kwanduzwa n'imyanda.

6. Gukura kwa kristu imwe: Isoko ya CVD-SiC ihinduka mu gihe cyo gusohora kristu hanyuma ikongera ikongera ku buso bw'ikristu kugira ngo ikore imiterere imwe ya kristu. Gukura vuba kwa kristu imwe ya SiC bishobora kugerwaho binyuze mu miterere ikwiye ya kristu hamwe no kugenzura ubushyuhe.