Simple innovative products Excellent thermal and electrical conductivity Graphite Semiconductor

Short Description:

Application: Semiconductor Parts
Resistance (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Place of Origin: Zhejiang, China
Dimensions Customized
Gain size: <=325mesh
Certificate: ISO9001:2015
Size and Shape: Customized


Product Detail

Product Tags

Simple innovative products Excellent thermal and electrical conductivity Graphite Semiconductor
 
Application: Semiconductor Parts
Resistance (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Place of Origin: Zhejiang, China
Dimensions Customized
Gain size: <=325mesh
Certificate: ISO9001:2015
Size and Shape: Customized

 

Simple innovative products  Excellent thermal and electrical conductivity Graphite Semiconductor

Simple innovative products  Excellent thermal and electrical conductivity Graphite Semiconductor

Simple innovative products  Excellent thermal and electrical conductivity Graphite Semiconductor

Simple innovative products  Excellent thermal and electrical conductivity Graphite Semiconductor


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