Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

Short Description:

Application: Semiconductor Parts
Resistance (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Place of Origin: Zhejiang, China
Dimensions Customized
Gain size: <=325mesh
Certificate: ISO9001:2015
Size and Shape: Customized


Product Detail

Product Tags

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor
Application: Semiconductor Parts
Resistance (μΩ.m): 8-10 Ohm
Porosity (%): 12% Max
Place of Origin: Zhejiang, China
Dimensions Customized
Gain size: <=325mesh
Certificate: ISO9001:2015
Size and Shape: Customized

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

Latest innovative products Good lubricity and wear resistance Graphite Semiconductor

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