Terei ea Carrier e koahetsoeng ka Silicon Carbide e sa senyeheng ke ts'enyeho

Terei e Koahetsoeng ea Silicon Carbide e Hanelang ho Sila Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Terei e Koahetsoeng ea VET Energy Silicon Carbide ke sehlahisoa se sebetsang hantle se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele. E na le khanyetso e ntle haholo ea mocheso le ho tšoana ha mocheso, bohloeki bo phahameng, khanyetso ea khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lits'ebetso tsa ts'ebetso ea wafer.

Romella imeile ho rona Khoasolla e le PDF

Qaqiso ea Sehlahisoa

Li-tag tsa Sehlahisoa

Terei ea thepa ea silicon carbideis a senotlolokarolo e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea li-semiconductor.Re sebelisa theknoloji ea rona e nang le patent ho etsa sesebelisoa sa ho jara carbide sa silicon kabohloeki bo phahameng haholo,hantlesekoaheloho tšoanale bophelo bo botle ba tšebeletso, moho lekhanyetso e phahameng ea lik'hemik'hale le thepa ea botsitso ba mocheso.

VET Energy ke emoetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse ikhethileng tse nang le pente ea CVD,e ka fana katse fapanenglikarolo tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic. OSehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, se ka fana ka litharollo tse ling tsa lisebelisoa tsa profeshenalemolemong oa hau.

Re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele haholoanyane,leba sebelitse theknoloji e ikhethang e nang le patente, e ka etsang hore kamano pakeng tsa sekoahelo le substrate e tiee le hore e se ke ea arohana habonolo.

FMefuta ea lihlahisoa tsa rona:

1. Khanyetso ea ho chesoa ha mocheso o phahameng ho fihlela ho 1700℃.
2. Bohloeki bo phahameng leho tšoana ha mocheso
3. Ho hanyetsa mafome hantle haholo: asiti, alkali, letsoai le li-reagent tsa tlhaho.
4. Ho thatafala ho hoholo, bokaholimo bo kopaneng, dikarolwana tse nyane.
5. Bophelo ba tšebeletso e telele le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Thepa ea motheo ea 'mele ea CVD SiCsekoahelo
性质 / Thepa	典型数值 / Boleng bo Tloaelehileng
晶体结构 / Sebopeho sa kristale	Mokhahlelo oa FCC β多晶，主要為（111）取向
密度 / Botenya	3.21 g/cm³
硬度 / Bothata	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Sekala sa Lithollo	2 ~ 10μm
纯度 / Bohloeki ba Lik'hemik'hale	99.99995%
热容 / Bokgoni ba Mocheso	640 J·kg^-1·K^-1
升华温度 / Mocheso oa Sublimation	2700℃
抗弯强度 / Matla a ho Kobeha	415 MPa RT lintlha tse 4
杨氏模量 / Modulus ea Bacha	430 Gpa kobeho ea 4pt, 1300℃
导热系数 / ThermalHo khanna motlakase	300W·m^-1·K^-1
热膨胀系数 / Katoloso ea Thermal (CTE)	4.5×10^-6K^-1