C, N, B ea sejoale-joale le thepa e meng e sa sebeliseng oxide e phahameng e hanyetsang, khatello ea sepakapaka ea silicon carbide e sintered e pharaletseng, e theko e tlaase, ho ka thoe ke emery kapa lehlabathe le hanyetsang. Carbide e hloekileng ea silicon ke kristale e bonaletsang e se nang 'mala. Joale sebopeho le litšobotsi tsa thepa ea silicon carbide ke life?
Carbide ea silicon e sintered tlas'a khatello ea sepakapaka
Sebopeho sa thepa ea khabide ea silicon e sintered e nang le khatello ea sepakapaka:
Carbide ea silicon e nang le khatello ea sepakapaka e sebelisoang indastering ke mosehla o bobebe, o motala, o moputsoa le o motšo ho latela mofuta le litaba tsa litšila, 'me bohloeki bo fapane' me ponahalo ea bona e fapane. Sebopeho sa kristale ea silicon carbide se arotsoe ka plutonium ea mantsoe a tšeletseng kapa e bōpehileng joaloka daemane le plutonium-sic ea cubic. Plutonium-sic e etsa mefuta e fapaneng ea phetoho ka lebaka la tatellano e fapaneng ea liathomo tsa carbon le silicon sebopehong sa kristale, 'me ho fumanoe mefuta e fetang 70 ea phetoho. beta-SIC e fetoha alpha-SIC ka holimo ho 2100. Ts'ebetso ea indasteri ea silicon carbide e hloekisoa ka lehlabathe la quartz la boleng bo holimo le coke ea peterole ka sebōping sa khanyetso. Li-block tsa silicon carbide tse hloekisitsoeng lia silakanngoa, ho hloekisoa ha acid-base, karohano ea makenete, ho hlahlojoa kapa ho khethoa ha metsi ho hlahisa mefuta e fapaneng ea lihlahisoa tsa boholo ba likaroloana.
Litšobotsi tsa thepa ea silicon carbide e sintered e nang le khatello ea sepakapaka:
Carbide ea silicon e na le botsitso bo botle ba lik'hemik'hale, ho tsamaisa mocheso, coefficient ea katoloso ea mocheso, ho hanyetsa ho tsofala, kahoo ntle le ts'ebeliso e matla, ho na le mekhoa e mengata: Mohlala, phofo ea carbide ea silicon e koahetsoe leboteng le ka hare la impeller ea turbine kapa block ea silindara ka ts'ebetso e ikhethang, e ka ntlafatsang ho hanyetsa ho tsofala le ho lelefatsa bophelo ba makhetlo a 1 ho isa ho a 2. E entsoe ka thepa e hanelang mocheso, boholo bo bonyenyane, boima bo bobebe, matla a phahameng a thepa e hanyetsang mocheso, ts'ebetso ea matla e ntle haholo. Carbide ea silicon ea boemo bo tlase (ho kenyeletsoa le hoo e ka bang 85% SiC) ke deoxidizer e ntle haholo bakeng sa ho eketsa lebelo la ho etsa tšepe le ho laola habonolo sebopeho sa lik'hemik'hale ho ntlafatsa boleng ba tšepe. Ho feta moo, carbide ea silicon e sintered khatello ea sepakapaka e boetse e sebelisoa haholo tlhahisong ea likarolo tsa motlakase tsa lithupa tsa carbon tsa silicon.
Carbide ea silicon e thata haholo. Bothata ba Morse ke 9.5, ea bobeli feela ho feta daemane e thata lefatšeng (10), ke semiconductor e nang le conductivity e ntle ea mocheso, e ka hanela oxidation mochesong o phahameng. Carbide ea silicon e na le bonyane mefuta e 70 ea kristale. Carbide ea Plutonium-silicon ke isomer e tloaelehileng e bopehang mochesong o kaholimo ho 2000 mme e na le sebopeho sa kristale sa hexagonal (se ts'oanang le wurtzite). Carbide ea silicon e sintered tlas'a khatello ea sepakapaka
Tšebeliso ea carbide ea silicon indastering ea semiconductor
Ketane ea indasteri ea semiconductor ea silicon carbide e kenyelletsa haholo-holo phofo ea silicon carbide e hloekileng haholo, substrate ea kristale e le 'ngoe, lakane ea epitaxial, likarolo tsa motlakase, sephutheloana sa module le lits'ebetso tsa terminal.
1. Substrate e le 'ngoe ea kristale Substrate e le 'ngoe ea kristale ke thepa e tšehetsang ea semiconductor, thepa e tsamaisang motlakase le substrate ea kholo ea epitaxial. Hona joale, mekhoa ea kholo ea kristale e le 'ngoe ea SiC e kenyelletsa mokhoa oa phetisetso ea mouoane oa 'mele (mokhoa oa PVT), mokhoa oa phase ea metsi (mokhoa oa LPE), le mokhoa oa ho beha mouoane oa lik'hemik'hale mochesong o phahameng (mokhoa oa HTCVD). Carbide ea silicon e sintered tlas'a khatello ea sepakapaka
2. Leqephe la Epitaxial Leqephe la epitaxial la silicon carbide, leqephe la silicon carbide, filimi e le 'ngoe ea kristale (lera la epitaxial) e nang le tataiso e tšoanang le kristale ea substrate e nang le litlhoko tse itseng bakeng sa substrate ea silicon carbide. Lits'ebetsong tse sebetsang, lisebelisoa tsa semiconductor tsa lekhalo le leholo la sehlopha se seholo li batla li etsoa ka lera la epitaxial, 'me chipu ea silicon ka boeona e sebelisoa feela e le substrate, ho kenyeletsoa substrate ea lera la GaN epitaxial.
3. Phofo ea silicon carbide e hloekileng haholo Phofo ea silicon carbide e hloekileng haholo ke thepa e tala bakeng sa kholo ea kristale e le 'ngoe ea silicon carbide ka mokhoa oa PVT, 'me bohloeki ba sehlahisoa bo ama ka kotloloho boleng ba kholo le litšobotsi tsa motlakase tsa kristale e le 'ngoe ea silicon carbide.
4. Sesebelisoa sa motlakase ke matla a sephara a entsoeng ka thepa ea silicon carbide, e nang le litšobotsi tsa mocheso o phahameng, maqhubu a phahameng le bokhoni bo phahameng. Ho ea ka mofuta oa ts'ebetso oa sesebelisoa, sesebelisoa sa phepelo ea motlakase sa SiC se kenyelletsa haholo-holo diode ea motlakase le tube ea switch ea motlakase.
5. Terminal Litšebelisong tsa semiconductor tsa moloko oa boraro, li-semiconductor tsa silicon carbide li na le monyetla oa ho tlatsana le li-semiconductor tsa gallium nitride. Ka lebaka la bokhoni bo phahameng ba phetoho, litšobotsi tse tlase tsa ho futhumatsa, bobebe le melemo e meng ea lisebelisoa tsa SiC, tlhoko ea indasteri e theohelang e ntse e eketseha, 'me ho na le mokhoa oa ho nkela lisebelisoa tsa SiO2 sebaka.
Nako ea poso: Phuptjane-16-2023