Ulwakhiwo lwezinto kunye neempawu ze-sintered silicon carbide phantsi koxinzelelo lomoya

Izinto zanamhlanje ze-C, N, B kunye nezinye izinto ezingezizo i-oxide ephezulu, i-silicon carbide exineneyo enoxinzelelo lomoya ibanzi, inoqoqosho, kunokuthiwa yi-emery okanye isanti enganyangekiyo. I-silicon carbide ecocekileyo yikristale ecacileyo engenambala. Ngoko ke yintoni isakhiwo sezinto kunye neempawu ze-silicon carbide?

I-silicon carbide etyhidiweyo phantsi koxinzelelo lomoya

Ulwakhiwo lwezinto ze-carbon dioxide ye-silicon ephothiweyo yoxinzelelo lomoya:

I-carbon carbide ye-silicon exineneyo esetyenziswa kushishino inombala otyheli, oluhlaza, oluhlaza okwesibhakabhaka nomnyama ngokohlobo kunye nomxholo wokungcola, kwaye ubunyulu bahlukile kwaye ukucaca kwahlukile. Isakhiwo sekristale ye-silicon carbide sahlulwe saba yi-plutonium enamagama amathandathu okanye i-diamond shape kunye ne-cubic plutonium-sic. I-Plutonium-sic yenza uhlobo lokuguquguquka ngenxa yolandelelwano olwahlukileyo lwee-athomu ze-carbon kunye ne-silicon kwisakhiwo sekristale, kwaye kufunyenwe iintlobo ezingaphezu kwama-70 zokuguquguquka. I-beta-SIC iguqulelwa kwi-alpha-SIC ngaphezulu kwama-2100. Inkqubo yemizi-mveliso ye-silicon carbide icociwe ngesanti ye-quartz esemgangathweni ophezulu kunye ne-petroleum coke kwisithando sokumelana. Iibhloko ze-silicon carbide ezicociweyo ziyatyumzwa, ukucocwa kwe-acid-base, ukwahlukana kwemagnethi, ukuhluzwa okanye ukukhethwa kwamanzi ukuvelisa iintlobo ngeentlobo zeemveliso zobungakanani bamasuntswana.

Iimpawu zezinto ezibonakalayo ze-carbon dioxide ye-silicon etyhidiweyo yoxinzelelo lomoya:

I-silicon carbide inamandla afanelekileyo okuzinza kweekhemikhali, ukuqhuba ubushushu, i-thermal expansion coefficient, ukumelana nokuguguleka, ngoko ke ukongeza ekusebenziseni okurhabaxa, kukho iindlela ezininzi zokusetyenziswa: Umzekelo, umgubo we-silicon carbide ugqunywe eludongeni lwangaphakathi lwe-turbine impeller okanye i-cylinder block ngenkqubo ekhethekileyo, enokuphucula ukumelana nokuguguleka kwaye yandise ubomi bayo amaxesha ama-1 ukuya kwama-2. Yenziwe ngezinto ezinganyangekiyo kubushushu, ubungakanani obuncinci, ubunzima obulula, amandla aphezulu ezinto ezichasene nobushushu, ukusebenza kakuhle kwamandla kulungile kakhulu. I-silicon carbide ekumgangatho ophantsi (kubandakanya malunga ne-85% SiC) yi-deoxidizer egqwesileyo yokwandisa isantya sokwenza intsimbi kunye nokulawula ngokulula ukwakheka kweekhemikhali ukuphucula umgangatho wentsimbi. Ukongeza, i-silicon carbide exineneyo yoxinzelelo lomoya ikwasetyenziswa kakhulu ekwenzeni iindawo zombane zeentonga ze-silicon carbon.

I-silicon carbide inzima kakhulu. Ubunzima be-Morse buyi-9.5, bukwindawo yesibini emva kwedayimani eqinileyo yehlabathi (10), yi-semiconductor ene-thermal conductivity egqwesileyo, inokumelana ne-oxidation kumaqondo obushushu aphezulu. I-Silicon carbide ineentlobo ze-crystalline ezingama-70 ubuncinane. I-Plutonium-silicon carbide yi-isomer eqhelekileyo eyenzeka kumaqondo obushushu angaphezu kwama-2000 kwaye inesakhiwo se-crystalline esinama-hexagonal (esifana ne-wurtzite). I-silicon carbide e-Sintered phantsi koxinzelelo lomoya.

Ukusetyenziswa kwe-silicon carbide kushishino lwe-semiconductor

Ikhonkco le-semiconductor ye-silicon carbide ibandakanya ikakhulu i-silicon carbide high-purity powder, i-single crystal substrate, i-epitaxial sheet, izixhobo zamandla, ukupakisha iimodyuli kunye nokusetyenziswa kwe-terminal.

1. I-single crystal substrate I-single crystal substrate sisixhobo esixhasa i-semiconductor, izinto eziqhubayo kunye ne-epitaxial growth substrate. Okwangoku, iindlela zokukhula ze-SiC single crystal ziquka indlela yokudlulisa umphunga ngokwasemzimbeni (indlela ye-PVT), indlela yesigaba solwelo (indlela ye-LPE), kunye nendlela yokubeka umphunga wamakhemikhali obushushu obuphezulu (indlela ye-HTCVD). I-sintered silicon carbide phantsi koxinzelelo lomoya

2. Iphepha le-Epitaxial Iphepha le-epitaxial le-silicon carbide, iphepha le-silicon carbide, ifilimu yekristale enye (umaleko we-epitaxial) enecala elifanayo nekristale ye-substrate eneemfuno ezithile ze-substrate ye-silicon carbide. Kwizicelo ezisebenzayo, izixhobo ze-semiconductor ze-wide band gap phantse zonke zenziwe kumaleko we-epitaxial, kwaye i-silicon chip ngokwayo isetyenziswa kuphela njenge-substrate, kubandakanya i-substrate yomaleko we-GaN epitaxial.

3. Umgubo we-silicon carbide ococekileyo kakhulu Umgubo we-silicon carbide ococekileyo kakhulu sisixhobo sokukhulisa i-silicon carbide single crystal ngendlela ye-PVT, kwaye ubunyulu bemveliso buchaphazela ngokuthe ngqo umgangatho wokukhula kunye neempawu zombane ze-silicon carbide single crystal.

4. Isixhobo sombane sisixhobo samandla esibanzi esenziwe ngezinto ze-silicon carbide, esineempawu zobushushu obuphezulu, i-frequency ephezulu kunye nokusebenza kakuhle okuphezulu. Ngokwendlela esisebenza ngayo esi sixhobo, isixhobo sombane seSiC siquka ikakhulu i-power diode kunye netyhubhu yokutshintsha umbane.

5. Isiphelo Kwizicelo ze-semiconductor zesizukulwana sesithathu, ii-semiconductors ze-silicon carbide zinenzuzo yokuba zihambelana nee-semiconductors ze-gallium nitride. Ngenxa yokusebenza kakuhle kokuguqula, iimpawu zokufudumeza eziphantsi, ukhaphukhaphu kunye nezinye izibonelelo zezixhobo ze-SiC, imfuno yoshishino olusezantsi iyaqhubeka nokwanda, kwaye kukho umkhwa wokutshintsha izixhobo ze-SiO2.