Izinto zokusetshenziswa zesimanje ze-C, N, B nezinye izinto zokusetshenziswa ezingezona i-oxide zobuchwepheshe obuphezulu, i-silicon carbide ecindezelwe umoya inkulu, inomnotho, kungathiwa iyi-emery noma isihlabathi esiphikisayo. I-silicon carbide emsulwa iyikristalu esobala engenambala. Ngakho-ke siyini isakhiwo sezinto ezibonakalayo kanye nezici ze-silicon carbide?
I-silicon carbide ecijile ngaphansi kwengcindezi yomoya
Isakhiwo sezinto ezibonakalayo se-silicon carbide ecindezelwe umoya:
I-silicon carbide ecindezelwe umoya esetshenziswa embonini iphuzi kancane, iluhlaza okotshani, iluhlaza okwesibhakabhaka kanye nomnyama ngokwezinhlobo nokuqukethwe kokungcola, kanti ubumsulwa buhlukile kanti ukucaca kuhlukile. Isakhiwo sekristalu se-silicon carbide sihlukaniswe saba yi-plutonium enamagama ayisithupha noma enomumo wedayimane kanye ne-cubic plutonium-sic. I-Plutonium-sic yakha ukuhlukahluka kokuguquguquka ngenxa yokuhlelwa okuhlukile kokuqoqwa kwama-athomu e-carbon ne-silicon esakhiweni sekristalu, futhi kutholakale izinhlobo ezingaphezu kuka-70 zokuguquguquka. I-beta-SIC iguqulwa ibe yi-alpha-SIC ngaphezu kuka-2100. Inqubo yezimboni ye-silicon carbide ihlungwa ngesihlabathi se-quartz sekhwalithi ephezulu kanye ne-petroleum coke esithandweni sokumelana. Amabhulokhi e-silicon carbide acwengisiwe ayachotshozwa, ukuhlanzwa kwe-acid-base, ukuhlukaniswa kwamagnetic, ukuhlolwa noma ukukhethwa kwamanzi ukukhiqiza imikhiqizo ehlukahlukene yosayizi wezinhlayiya.
Izici zezinto ezibonakalayo ze-silicon carbide ecindezelwe umoya:
I-silicon carbide inokuqina okuhle kwamakhemikhali, ukuqhuba ukushisa, i-coefficient yokwanda kokushisa, ukumelana nokuguguleka, ngakho-ke ngaphezu kokusetshenziswa okunolaka, kunezindlela eziningi zokusebenzisa: Isibonelo, i-silicon carbide powder imbozwe odongeni lwangaphakathi lwe-turbine impeller noma i-cylinder block ngenqubo ekhethekile, engathuthukisa ukumelana nokuguguleka futhi yandise impilo izikhathi ezingu-1 kuya kwezingu-2. Yenziwe ngezinto ezingamelani nokushisa, ezinobukhulu obuncane, isisindo esincane, amandla aphezulu ezinto eziphikisayo zezinga eliphezulu, ukusebenza kahle kwamandla kuhle kakhulu. I-silicon carbide yezinga eliphansi (kufaka phakathi cishe i-85% SiC) iyi-deoxidizer enhle kakhulu yokwandisa isivinini sokwenza insimbi nokulawula kalula ukwakheka kwamakhemikhali ukuthuthukisa ikhwalithi yensimbi. Ngaphezu kwalokho, i-silicon carbide ecindezelwe umoya nayo isetshenziswa kabanzi ekwenziweni kwezingxenye zikagesi zezinduku ze-silicon carbon.
I-silicon carbide iqinile kakhulu. Ubunzima be-Morse bungu-9.5, bungowesibili kuphela kunedayimane eliqinile emhlabeni (10), iyi-semiconductor enokushisa okuhle kakhulu, ingamelana nokushiswa emazingeni okushisa aphezulu. I-Silicon carbide inezinhlobo okungenani ezingama-70 zamakristalu. I-Plutonium-silicon carbide iyi-isomer evamile eyakheka emazingeni okushisa angaphezu kuka-2000 futhi inesakhiwo sekristalu esinama-hexagonal (esifana ne-wurtzite). I-silicon carbide ehlanganisiwe ngaphansi kwengcindezi yomoya
Ukusetshenziswa kwe-silicon carbide embonini ye-semiconductor
Uchungechunge lwezimboni ze-silicon carbide semiconductor luhlanganisa kakhulu i-silicon carbide high-purity powder, i-single crystal substrate, ishidi le-epitaxial, izingxenye zamandla, ukupakishwa kwemodyuli kanye nezicelo ze-terminal.
1. I-substrate yekristalu elilodwa I-substrate yekristalu elilodwa liyizinto ezisekelayo ze-semiconductor, izinto eziqhubayo kanye ne-substrate yokukhula kwe-epitaxial. Njengamanje, izindlela zokukhula ze-SiC single crystal zifaka phakathi indlela yokudlulisa umusi ongokoqobo (indlela ye-PVT), indlela yesigaba soketshezi (indlela ye-LPE), kanye nendlela yokufaka umusi wamakhemikhali okushisa okuphezulu (indlela ye-HTCVD). I-sintered silicon carbide ngaphansi kwengcindezi yomoya
2. Ishidi le-Epitaxial Ishidi le-epitaxial le-silicon carbide, ishidi le-silicon carbide, ifilimu yekristalu eyodwa (ungqimba lwe-epitaxial) enesiqondiso esifanayo nekristalu ye-substrate enezidingo ezithile ze-substrate ye-silicon carbide. Ezisetshenzisweni ezisebenzayo, amadivayisi e-semiconductor e-wide band gap cishe wonke akhiqizwa kungqimba lwe-epitaxial, futhi i-silicon chip ngokwayo isetshenziswa kuphela njenge-substrate, kufaka phakathi i-substrate yengqimba ye-GaN epitaxial.
3. Impuphu ye-silicon carbide emsulwa kakhulu Impuphu ye-silicon carbide emsulwa kakhulu iyinto eluhlaza yokukhula kwekristalu eyodwa ye-silicon carbide ngendlela ye-PVT, futhi ubumsulwa bomkhiqizo buthinta ngqo ikhwalithi yokukhula kanye nezici zikagesi zekristalu eyodwa ye-silicon carbide.
4. Idivayisi yamandla iyi-wide-band power eyenziwe ngezinto ze-silicon carbide, ezinezici zokushisa okuphezulu, imvamisa ephezulu kanye nokusebenza kahle okuphezulu. Ngokwesimo sokusebenza kwedivayisi, idivayisi yamandla ye-SiC ifaka kakhulu i-power diode kanye neshubhu yokushintsha amandla.
5. Itheminali Ezisetshenzisweni ze-semiconductor zesizukulwane sesithathu, ama-semiconductor e-silicon carbide anenzuzo yokuba ahambisana nama-semiconductor e-gallium nitride. Ngenxa yokusebenza kahle kokuguqulwa, izici zokushisa eziphansi, ukungabi lula nezinye izinzuzo zamadivayisi e-SiC, isidingo semboni engezansi siyaqhubeka nokukhula, futhi kukhona ukuthambekela kokufaka esikhundleni samadivayisi e-SiO2.
Isikhathi sokuthunyelwe: Juni-16-2023