Maumbirwo esimbi uye hunhu hwesilicon carbide yakapfava pasi pekumanikidzwa kwemhepo

Zvemazuva ano C, N, B nezvimwe zvinhu zvemhando yepamusoro zvisina oxide, silicon carbide yakakamurwa mumhepo yakakura, inodhura zvishoma, inogona kunzi emery kana jecha risingagadzike. Silicon carbide yakachena haina ruvara, yakajeka, kristalo. Saka chimiro chesilicon carbide chii uye hunhu hwayo?

Sintered silicon carbide pasi pekumanikidzwa kwemhepo

Maumbirwo esimbi yesilicon carbide inosvinwa mumhepo:

Iyo silicon carbide ine simba remhepo inoshandiswa mumaindasitiri ndeyeyero yakapfava, girini, bhuruu nedema zvichienderana nerudzi uye zviri mukati metsvina, uye kuchena kwakasiyana uye kujeka kwakasiyana. Chimiro chekristalo chesilicon carbide chakakamurwa kuita plutonium ine mativi matanhatu kana kuti dhaimani yakaita se plutonium uye cubic plutonium-sic. Plutonium-sic inoumba shanduko dzakasiyana nekuda kwekurongeka kwakasiyana kwemaatomu ekabhoni nesilicon muchimiro chekristalo, uye mhando dzinopfuura makumi manomwe dzekushanduka dzakawanikwa. beta-SIC inoshanduka kuita alpha-SIC pamusoro pe2100. Maitiro eindasitiri esilicon carbide anonatswa nejecha requartz remhando yepamusoro uye petroleum coke muchoto chekudzivirira. Zvidhinha zvesilicon carbide zvakacheneswa zvinopwanywa, kuchenesa acid-base, kupatsanurwa kwemagineti, kuongorora kana kusarudza mvura kuti zvigadzire zvigadzirwa zvakasiyana-siyana zvehukuru hwezvimedu.

Hunhu hwezvinhu zve spirit silicon carbide inomanikidzwa nemhepo:

Silicon carbide ine kugadzikana kwakanaka kwemakemikari, kufambisa kupisa, kuwedzera kwekupisa, kuramba kupfeka, saka pamusoro pekushandiswa kwekukwesha, kune mashandisirwo akawanda: Semuenzaniso, upfu hwesilicon carbide hwakaputirwa pamadziro emukati me turbine impeller kana cylinder block nenzira yakakosha, iyo inogona kuvandudza kuramba kupfeka uye kuwedzera hupenyu hwe1 kusvika ku2. Yakagadzirwa nezvinhu zvinodzivirira kupisa, saizi diki, huremu hwakareruka, simba rakawanda rezvinhu zvinodzivirira kupisa, kushanda nesimba kwakanaka kwazvo. Silicon carbide yemhando yepasi (kusanganisira inenge 85% SiC) i deoxidizer yakanaka yekuwedzera kumhanya kwekugadzira simbi uye kudzora zviri nyore kuumbwa kwemakemikari kuti ivandudze mhando yesimbi. Pamusoro pezvo, silicon carbide inomanikidzwa nemhepo inoshandiswawo zvakanyanya mukugadzira zvikamu zvemagetsi zvesilicon carbon rods.

Silicon carbide yakaoma zvikuru. Kuomarara kweMorse i9.5, yechipiri chete kubva kudhaimani rakaoma pasi rose (10), imhando ye semiconductor ine conductivity yakanaka yekupisa, inogona kuramba oxidation pakupisa kwakanyanya. Silicon carbide ine mhando dzekristaro dzinosvika makumi manomwe. Plutonium-silicon carbide iisomer yakajairika inoumbwa pakupisa kuri pamusoro pe2000 uye ine chimiro chekristaro chehexagonal (chakafanana newurtzite). Sintered silicon carbide pasi pekumanikidzwa kwemhepo.

Kushandiswa kwesilicon carbide muindasitiri yesemiconductor

Cheni yeindasitiri yesilicon carbide semiconductor inonyanya kusanganisira silicon carbide high-purity powder, single crystal substrate, epitaxial sheet, power components, module packaging uye terminal applications.

1. Substrate yekristaro imwe chete Substrate yekristaro imwe chete isimbi inotsigira semiconductor, conductive material uye epitaxial growth substrate. Parizvino, nzira dzekukura dzeSiC single crystal dzinosanganisira nzira yekufambisa vapor physical (PVT method), liquid phase method (LPE method), uye high temperature chemical vapor deposition method (HTCVD method). Sintered silicon carbide pasi pekumanikidzwa kwemhepo.

2. Pepa reEpitaxial Pepa reSilicon carbide epitaxial, pepa resilicon carbide, firimu rekristaro rimwe chete (epitaxial layer) rine divi rakafanana nekristaro yesubstrate ine zvinodiwa zvesilicon carbide substrate. Mukushandiswa kwaro, zvishandiso zve semiconductor zveband gap yakawanda zvinenge zvese zvinogadzirwa mu epitaxial layer, uye silicon chip pachayo inoshandiswa chete se substrate, kusanganisira substrate yeGaN epitaxial layer.

3. Upfu hwesilicon carbide hwakachena kwazvo Upfu hwesilicon carbide hwakachena zvikuru ndiyo chinhu chakakosha pakukura kwesilicon carbide single crystal nePVT method, uye kuchena kwechigadzirwa kunokanganisa zvakananga kukura kwemhando uye hunhu hwemagetsi hwesilicon carbide single crystal.

4. Chishandiso chemagetsi isimba rebhandi rakakura rakagadzirwa nezvinhu zvesilicon carbide, zvine hunhu hwekupisa kwakanyanya, frequency yakakwira uye kushanda zvakanaka. Zvichienderana nechimiro chekushanda kwechishandiso ichi, chishandiso cheSiC chinosanganisira power diode nechubhu yekuchinja magetsi.

5. Terminal Mukushandiswa kwe semiconductor yechizvarwa chechitatu, silicon carbide semiconductors dzine mukana wekuwedzera kune gallium nitride semiconductors. Nekuda kwekushanda kwakanyanya kwekushandura, hunhu hwekupisa hushoma, huremu hwakareruka nezvimwe zvakanakira zveSiC devices, kudiwa kweindasitiri iri pasi kuri kuramba kuchiwedzera, uye kune katsika kekutsiva SiO2 devices.