Imeko yophando lweeseramikhi ze-silicon carbide eziphinde zasetyenziswa

Iphinde yaphinda yafakwa kwikristaleiiseramikhi zesilicon carbide (RSiC)ngabaizixhobo zeseramikhi ezisebenza kakuhleNgenxa yokumelana kwayo nobushushu obuphezulu, ukumelana ne-oxidation, ukumelana nokugqwala kunye nobunzima obuphezulu, isetyenziswa kakhulu kwiindawo ezininzi, ezifana nokuvelisa i-semiconductor, ishishini le-photovoltaic, izitofu zobushushu obuphezulu kunye nezixhobo zamakhemikhali. Ngenxa yokwanda kwemfuno yezixhobo zokusebenza okuphezulu kushishino lwanamhlanje, uphando kunye nophuhliso lweeseramikhi ze-silicon carbide eziphinde zasetyenziswa ziya zisiba nzulu.

1. Itekhnoloji yokulungiselelaiiseramikhi ze-silicon carbide eziphinde zasetyenziswa

Itekhnoloji yokulungiselela i-recrystallizediiseramikhi zesilicon carbideNgokuyintloko ibandakanya iindlela ezimbini: ukucutshungulwa komgubo kunye nokufakwa komphunga (CVD). Phakathi kwazo, indlela yokucutshungulwa komgubo kukucoca umgubo we-silicon carbide phantsi kobushushu obuphezulu ukuze amasuntswana e-silicon carbide enze isakhiwo esixineneyo ngokusasazwa kunye nokuphinda kusetyenziswe phakathi kweenkozo. Indlela yokucutshungulwa komphunga kukufaka i-silicon carbide kumphezulu we-substrate nge-chemical vapor reaction kubushushu obuphezulu, ngaloo ndlela kwakheka ifilimu ye-silicon carbide ecocekileyo kakhulu okanye iindawo zesakhiwo. Ezi teknoloji zimbini zinezibonelelo zazo. Indlela yokucutshungulwa komgubo ifanelekile kwimveliso enkulu kwaye inexabiso eliphantsi, ngelixa indlela yokucutshungulwa komphunga inokubonelela ngobunyulu obuphezulu kunye nesakhiwo esixineneyo, kwaye isetyenziswa kakhulu kwicandelo le-semiconductor.

2. Iimpawu zezinto ezibonakalayoiiseramikhi ze-silicon carbide eziphinde zasetyenziswa

Uphawu olubalaseleyo lwee-recrystallized silicon carbide ceramics kukusebenza kwazo okuhle kakhulu kwiindawo ezinobushushu obuphezulu. Iqondo lokunyibilika kwale nto liphezulu njenge-2700°C, kwaye inamandla amahle oomatshini kumaqondo obushushu aphezulu. Ukongeza, i-recrystallized silicon carbide ikwanokumelana okuhle kakhulu ne-oxidation kunye nokumelana nokugqwala, kwaye inokuhlala izinzile kwiindawo ezinobukhemikhali obugqithisileyo. Ke ngoko, ii-RSiC ceramics zisetyenziswe kakhulu kwiindawo zobushushu obuphezulu, izinto ezichasene nobushushu obuphezulu, kunye nezixhobo zeekhemikhali.

Ukongeza, i-silicon carbide ephinde yasetyenziswa inomoya ophezulu wokushisa kwaye inokuqhuba ubushushu ngokufanelekileyo, nto leyo eyenza ukuba ibe nexabiso elibalulekileyo lokusetyenziswa kwayoIi-reactor ze-MOCVDkunye nezixhobo zonyango lobushushu kwimveliso ye-semiconductor wafer. Ukuqhuba kwayo okuphezulu kobushushu kunye nokumelana noxinzelelo lobushushu kuqinisekisa ukusebenza okuthembekileyo kwezixhobo phantsi kweemeko ezinzima.

3. Iindawo zokusetyenziswa kweeseramikhi ze-silicon carbide eziphinde zasetyenziswa

Ukwenziwa kwee-semiconductor: Kwishishini le-semiconductor, ii-ceramics ze-silicon carbide eziphinde zasetyenziswa zisetyenziselwa ukuvelisa ii-substrates kunye neenkxaso kwi-MOCVD reactors. Ngenxa yokumelana nobushushu obuphezulu, ukumelana nokugqwala, kunye nokuqhuba okuphezulu kobushushu, izixhobo ze-RSiC zinokugcina ukusebenza okuzinzileyo kwiindawo ezintsonkothileyo ze-chemical reaction, ukuqinisekisa umgangatho kunye nemveliso yee-wafers ze-semiconductor.

Ishishini le-Photovoltaic: Kwishishini le-photovoltaic, i-RSiC isetyenziselwa ukuvelisa isakhiwo esixhasayo sezixhobo zokukhulisa ikristale. Ekubeni ukukhula kwekristale kufuneka kwenziwe kubushushu obuphezulu ngexesha lenkqubo yokuvelisa iiseli ze-photovoltaic, ukumelana nobushushu kwe-silicon carbide ephinde yasetyenziswa kuqinisekisa ukusebenza okuzinzileyo kwexesha elide kwezixhobo.

Iifeni ezishushu kakhulu: Iiseramikhi ze-RSiC zikwasetyenziswa kakhulu kwiifeni ezishushu kakhulu, ezifana nee-linings kunye neenxalenye zeefeni ezishushu, iifeni ezinyibilikayo kunye nezinye izixhobo. Ukumelana kwayo nobushushu kunye nokumelana ne-oxidation kwenza ukuba ibe yenye yezinto ezingenakutshintshwa kwimizi-mveliso eshushu kakhulu.

4. Ulwalathiso lophando lwe-recrystallized silicon carbide ceramics

Ngenxa yokwanda kwemfuno yezinto ezisebenza kakuhle, ulwalathiso lophando lweeseramikhi ze-silicon carbide eziphinde zasetyenziswa luye lwacaca kancinci kancinci. Uphando lwexesha elizayo luza kugxila kwezi zinto zilandelayo:

Ukuphucula ubunyulu bezinto: Ukuze kuhlangatyezwane neemfuno eziphezulu zobunyulu kwiindawo ze-semiconductor kunye ne-photovoltaic, abaphandi bahlola iindlela zokuphucula ubunyulu be-RSiC ngokuphucula iteknoloji yokubeka umphunga okanye ukungenisa izinto ezintsha ezikrwada, ngaloo ndlela kuphucula ixabiso layo lokusetyenziswa kwezi ndawo ziphezulu zobugcisa.

Ukuphucula ulwakhiwo lwe-microstructure: Ngokulawula iimeko zokusila kunye nokusasazwa kwamasuntswana e-powder, ulwakhiwo lwe-microstructure ye-recrystallized silicon carbide lunokuphuculwa ngakumbi, ngaloo ndlela luphucula iimpawu zalo zoomatshini kunye nokumelana nobushushu.

Izixhobo ezidityanisiweyo ezisebenzayo: Ukuze zilungelelaniswe neendawo ezisetyenziswa nzima ngakumbi, abaphandi bazama ukudibanisa i-RSiC nezinye izinto ukuze baphuhlise izixhobo ezidityanisiweyo ezineempawu ezininzi, ezifana nezixhobo ezidityanisiweyo ezisekwe kwi-silicon carbide eziphinda zisetyenziswe ezinokumelana nokuguguleka okuphezulu kunye nokuqhuba kombane.

5. Isiphelo

Njengezinto ezisebenza kakuhle, iiceramics ze-silicon carbide eziphinde zasetyenziswa ziye zasetyenziswa kakhulu kwiindawo ezininzi ngenxa yeempawu zazo ezibalaseleyo kubushushu obuphezulu, ukumelana ne-oxidation kunye nokumelana nokugqwala. Uphando lwexesha elizayo luza kugxila ekuphuculeni ubunyulu bezinto, ukuphucula ulwakhiwo lwe-microstructure kunye nokuphuhlisa izixhobo ezisebenzayo ezidityanisiweyo ukuhlangabezana neemfuno ezikhulayo zoshishino. Ngale ndlela intsha yetekhnoloji, iiceramics ze-silicon carbide eziphinde zasetyenziswa kulindeleke ukuba zidlale indima enkulu kwiindawo zobuchwepheshe obuphezulu.