Yintoni i-SOI?

I-SOI sisifinyezo segama elithiIsigqubutheli seSilicon-on-Insulator. Ngokoqobo, lithetha “i-silicon kwi-insulator.” Ngokwenyani, ulwakhiwo kukuba kukho umaleko obhityileyo kakhulu wokukhusela, njenge-SiO₂, phezu kwe-silicon wafer, uze emva koko kwenziwe umaleko obhityileyo we-silicon phezu kwalo maleko wokukhusela. Olu lwakhiwo lwahlula umaleko we-silicon osebenzayo kwi-silicon substrate. Nangona kunjalo, kwinkqubo ye-silicon yendabuko, i-chip yenziwa ngokuthe ngqo kwi-silicon substrate ngaphandle kokusebenzisa umaleko wokukhusela.

I-SOI waferyenziwe ngamaleya amathathu abalulekileyo olwakhiwo: umaleko wesixhobo se-silicon esinekristale enye, umaleko wokukhusela i-silicon dioxide (i-oxide ebiweyo, okanye i-BOX), kunye ne-silicon substrate. Xa zidibene, ezi laya zintathu zakha indawo yombane ezimeleyo nezinzileyo, apho umaleko ngamnye udlala indima yawo ngelixa usebenza ngokubambisana ukuphucula ukusebenza kunye nokuthembeka ngokubanzi.

Umaleko ophezulu wesixhobo se-silicon esinekristale enye (ngokudla ngokuba malunga ne-5 nm ukuya kwi-2 μm ubukhulu) yindawo ephambili apho kwenziwa khona ii-transistors kunye nezinye izixhobo ezisebenzayo. Ulwakhiwo lwayo olucekethekileyo lusisiseko esibalulekileyo sokuphucula ukusebenza kwesixhobo kunye nokuvumela ukukala okuqhubekayo.

Umaleko ophakathi we-oxide (BOX) ubonelela ngokwahlukana kombane. Olu maleko we-silicon dioxide, odla ngokuba yi-5 nm ukuya kwi-2 μm ubukhulu, uthintela ngokufanelekileyo ukudibana kombane phakathi komaleko wesixhobo kunye ne-substrate engaphantsi ngokusebenzisa iindlela zokwahlula ngokwasemzimbeni nangokweekhemikhali.

Isiseko sesilicon esisezantsi sibonelela ngokuqina kwesakhiwo kunye nokuzinza koomatshini, siqinisekisa ukuthembeka kwe-wafer ngexesha lokwenziwa kunye nokusebenza okulandelayo. Ubukhulu bayo ngokubanzi buphakathi kwe-200 μm ukuya kwi-700 μm, inika inkxaso eyaneleyo yoomatshini ngelixa ithathela ingqalelo iimfuno zokuqhubekeka nokusebenza kunye nosetyenziso.

Iingenelo eziphambili zee-SOI Wafers
1. Isantya Esiphezulu

• Ngomaleko we-oxide ongcwatywe phantsi kwezixhobo, ii-transistors zahlulwe kwi-substrate ye-silicon. Oku kunciphisa amandla e-parasitic, kukhawulezise ukutshintsha, kwaye kwenza i-SOI ifaneleke kakuhle kwiisekethe ze-logic ezikhawulezayo kunye ne-RF.

2. Ukusetyenziswa kwamandla okuphantsi

• Umthamo omncinci uthetha ukuba ilahleko zokutshaja kunye nokukhupha itshaja ziphantsi.
• Iindlela ezimbalwa zokuvuza zikhokelela ekusetyenzisweni kwamandla okulinda okulinganiselweyo (okungashukumiyo), nto leyo eyenza inkqubo isebenzise amandla kakuhle.

3. Ukuzahlula okungcono

• Isixhobo ngasinye "sihleli" kumaleko we-oxide, nto leyo enciphisa kakhulu ukuphazamiseka kombane phakathi kwezixhobo. Oku kuphucula uzinzo xa kuhlanganiswa iisekethe ze-analog + digital, iiyunithi zolawulo lwamandla, kunye neemodyuli ze-RF kwi-chip efanayo.

4. Ukuphuculwa kwemitha kunye nokunyamezelana kobushushu obuphezulu

• Iindleko eziveliswa yimitha azinakwenzeka ukuba zisasazeke kwi-substrate, nto leyo eyenza izixhobo ze-SOI zikhuseleke kwaye zithembeke ngakumbi kwiindawo ezinemitha ephezulu efana ne-aerospace.
• Ukwanda komsinga wokuvuza kwamanzi kumaqondo obushushu aphezulu akukubi kangako, nto leyo eluncedo kwii-elektroniki zeemoto kunye nezicelo zolawulo lwemizi-mveliso.

5. Ifanelekile ekuKhulisweni okuNgcono

• Ngomaleko we-silicon obhityileyo kakhulu phezulu kunye nomaleko we-oxide ongcwatyiweyo ngaphantsi, iziphumo ze-short-channel zilawulwa ngcono, okwenza kube lula ukugcina indlela esebenza ngayo isixhobo njengoko ii-process nodes ziqhubeka nokuncipha.

Itekhnoloji ye-SOI sele isetyenzisiwe kwiindawo ezininzi. Kwi-electronics zabathengi, isetyenziswa kwiimodyuli ze-RF front-end zeefowuni, ezifana nezihluzi ze-5G. Kwi-electronics zezithuthi, ibonelela ngeqonga lenkqubo elizinzileyo leetships zeradar ezingaphakathi emotweni. Kwicandelo leenqwelo moya, isetyenziswa kwizixhobo zonxibelelwano lwesathelayithi ezithembeke kakhulu. Kwizixhobo zonyango, i-SOI ixhasa uyilo kunye nokusetyenziswa kwee-sensors zonyango ezifakelwayo kunye neentlobo ezahlukeneyo zeetships zokujonga eziphantsi.

Inkampani yethu inikezela ngeeprojekthi ezenziwe ngokwezifiso zee-wafers ze-silicon carrier ze-single-crystal:

• Ubukhulu be-silicon substrate: 100 μm / 300 μm / 400 μm / 500 μm / 625 μm nangaphezulu

• Ubukhulu be-SiO₂: ukusuka kwi-100 nm ukuya kwi-10 μm

• Umaleko we-silicon osebenzayo: ≥ 20 nm