Chii chinonzi SOI?

SOI idimikira rekutiChinodzivirira-pa-Silicon. Zvinoreva kuti "silicon iri pa insulator." Mukuita, chimiro ndechekuti pane chidimbu chekudzivirira chakatetepa kwazvo, senge SiO₂, pamusoro pe silicon wafer, uye ipapo chidimbu che silicon chakatetepa chinoumbwa pamusoro pe chidimbu ichi chekudzivirira. Chimiro ichi chinoparadzanisa chidimbu che silicon chinoshanda kubva ku silicon substrate. Zvisinei, mune maitiro echinyakare e silicon, chip inoumbwa zvakananga pa silicon substrate pasina kushandisa chidimbu chekudzivirira.

SOI waferinoumbwa nezvikamu zvitatu zvakakosha zvekuvaka: chikamu chesilicon device chega chega, chikamu chesilicon dioxide chinodzivirira (yakavigwa oxide, kana kuti BOX), uye chikamu chesilicon. Pamwe chete, zvikamu zvitatu izvi zvinoumba nzvimbo yemagetsi yakazvimirira uye yakagadzikana, chikamu chimwe nechimwe chichiita basa rayo pachacho chichishanda pamwe chete kuti chiwedzere kushanda zvakanaka uye kuvimbika.

Rutivi rwepamusoro rwesilicon ine kristalo imwe chete (kazhinji rune ukobvu hwe5 nm kusvika 2 μm) ndiyo nzvimbo huru inogadzirwa ma transistors nezvimwe zvishandiso zvinoshanda. Maumbirwo ayo akatetepa zvikuru ihwaro hwakakosha hwekuvandudza mashandiro emuchina uye kugonesa kuyera nguva dzose.

Rutivi rwepakati rwakavigwa oxide (BOX) runopa kupatsanurwa kwemagetsi. Rutivi urwu rwesilicon dioxide, runowanzova 5 nm kusvika 2 μm muukobvu, runovhara zvinobudirira kubatana kwemagetsi pakati perutivi rwechishandiso nepasi pevhu kuburikidza nemaitiro emuviri neemakemikari ekupatsanurwa.

Chikamu chepasi chesilicon chinonyanya kupa kusimba kwechimiro uye kugadzikana kwemuchina, zvichiita kuti chive chakavimbika panguva yekugadzira uye kushanda kwacho kunotevera. Ukobvu hwayo hunowanzova pakati pe200 μm kusvika 700 μm, zvichipa rutsigiro rwakakwana rwemuchina ukuwo zvichifunga nezvekugona kugadziriswa uye zvinodiwa pakushandisa.

Mabhenefiti Makuru eSOI Wafers
1.Kumhanya Kwakakwirira

• Nekuva nechikamu che oxide chakavigwa pasi pemidziyo, ma transistors anobviswa kubva ku silicon substrate. Izvi zvinoderedza simba re parasitic, zvinokurumidzisa switching, uye zvinoita kuti SOI ive yakakodzera ma logic ekumhanya kukuru uye ma RF circuits.

2.Kushandiswa Kwesimba Rishoma

• Kukwanisa kudiki kunoreva kudzikira kwekuchaja nekurasikirwa nekuburitsa simba.
• Nzira shoma dzekudonhedza mvura dzinoita kuti simba rishandiswe zvishoma panguva imwe chete (static), zvichiita kuti sisitimu ishandise simba rayo zvakanaka.

3.Kuzviparadzanisa Zviri Nani

• Mudziyo wega wega "uri" pa "oxide layer", izvo zvinoderedza zvakanyanya kupindirana kwemagetsi pakati pemidziyo. Izvi zvinovandudza kugadzikana kana zvichibatanidza ma "analog + digital circuits", ma "power management units", uye ma "RF modules" pa "chip" imwe chete.

4. Kuvandudzwa kweMwaranzi uye Kushivirira Kupisa Kwakanyanya

• Mari dzinogadzirwa nemwaranzi hadzina mukana wekupararira nepasi pevhu, zvichiita kuti michina yeSOI ive yakachengeteka uye yakavimbika munzvimbo dzine mwaranzi yakawanda dzakadai semuchadenga.
• Kuwedzera kwemvura inobuda pakupisa kwakanyanya hakuna kunyanya kuipa, izvo zvinobatsira pamagetsi emotokari uye mashandisirwo ekudzora maindasitiri.

5. Yakanakira Kuwedzera Kuwedzera

• Nerukoko rwakatetepa rwesilicon pamusoro uye rukoko rwakavigwa rweoxide pasi, mhedzisiro yepfupi-channel inodzorwa zviri nani, zvichiita kuti zvive nyore kuchengetedza maitiro akagadzikana emudziyo sezvo ma process nodes achiramba achiderera.

Tekinoroji yeSOI yakatoshandiswa munzvimbo dzakasiyana-siyana. Mumagetsi evatengi, inoshandiswa mumamodule eRF front-end emafoni, akadai se5G filters. Mumagetsi emotokari, inopa puratifomu yakagadzikana yemaitiro e radar chips mumotokari. Muchikamu chendege, inoshandiswa mumidziyo yekukurukurirana nesatellite yakavimbika zvikuru. Mumidziyo yekurapa, SOI inotsigira dhizaini nekushandiswa kwemasensa ekurapa anogona kuiswa uye mhando dzakasiyana dzemachipisi ekutarisa asina simba rakawanda.

Kambani yedu inopa mapurojekiti akagadzirirwa mawafer e single-crystal silicon carrier:

• Ukobvu hwesilicon substrate: 100 μm / 300 μm / 400 μm / 500 μm / 625 μm zvichikwira

• Ukobvu hweSiO₂: kubva pa100 nm kusvika pa10 μm

• Rutivi rwesilicon runoshanda: ≥ 20 nm