Kuyini i-SOI?

I-SOI yisifinyezo se-Isivikelo Esiku-Silicon. Ngokwezwi nezwi, kusho ukuthi “i-silicon ku-insulator.” Empeleni, isakhiwo siwukuthi kukhona ungqimba oluncane kakhulu lokuvikela, njenge-SiO₂, phezu kwe-silicon wafer, bese kwakheka ungqimba oluncane lwe-silicon phezu kwalolu ngqimba lokuvikela. Lesi sakhiwo sihlukanisa ungqimba lwe-silicon olusebenzayo ku-substrate ye-silicon. Nokho, enkambisweni ye-silicon yendabuko, i-chip yakhiwa ngqo ku-substrate ye-silicon ngaphandle kokusebenzisa ungqimba oluvikelayo.

I-SOI waferYakhiwe ngezendlalelo ezintathu ezibalulekile zesakhiwo: isendlalelo sedivayisi ye-silicon enekristalu elilodwa, isendlalelo sokuvikela i-silicon dioxide (i-oxide ebinjiwe, noma i-BOX), kanye ne-silicon substrate. Ndawonye, ​​lezi zendlalelo ezintathu zakha indawo kagesi ezimele futhi ezinzile, lapho isendlalelo ngasinye sidlala indima yaso ngenkathi sisebenza ngokubambisana ukuthuthukisa ukusebenza kanye nokuthembeka okuphelele.

Isendlalelo esiphezulu sedivayisi ye-silicon enekristalu elilodwa (ngokuvamile cishe ubukhulu obungu-5 nm kuya ku-2 μm) yisifunda esiyinhloko lapho kwenziwa khona ama-transistors namanye amadivayisi asebenzayo. Isakhiwo saso esinciphile kakhulu siyisisekelo esibalulekile sokuthuthukisa ukusebenza kwedivayisi nokuvumela ukukala okuqhubekayo.

Isendlalelo esiphakathi nendawo se-oxide (BOX) sinikeza ukuhlukaniswa kukagesi. Le sendlalelo se-silicon dioxide, ngokuvamile esiwubukhulu obungu-5 nm kuya ku-2 μm, sivimba ngempumelelo ukuhlangana kukagesi phakathi kwesendlalelo sedivayisi kanye ne-substrate engaphansi kokubili ngezindlela zokuhlukaniswa ngokomzimba namakhemikhali.

I-substrate ye-silicon engezansi ihlinzeka ngokuqina kwesakhiwo kanye nokuqina kwemishini, iqinisekisa ukuthembeka kwe-wafer ngesikhathi sokukhiqiza kanye nokusebenza okulandelayo. Ubukhulu bayo ngokuvamile buphakathi kuka-200 μm kuya ku-700 μm, okunikeza ukwesekwa okwanele kwemishini ngenkathi kucatshangelwa ukucutshungulwa kanye nezidingo zokusetshenziswa.

Izinzuzo Eziyinhloko Zama-SOI Wafers
1. Isivinini Esiphezulu

• Njengoba kunesendlalelo se-oxide esifihliwe ngaphansi kwamadivayisi, ama-transistors ahlukaniswe ne-substrate ye-silicon. Lokhu kunciphisa amandla e-parasitic, kusheshise ukushintsha, futhi kwenza i-SOI ifaneleke kahle kumasekethe e-logic asheshayo kanye ne-RF.

2. Ukusetshenziswa Kwamandla Okuphansi

• Umthamo omncane usho ukulahlekelwa okuphansi kokushaja nokukhipha ishaja.
• Izindlela ezimbalwa zokuvuza ziholela ekunciphiseni ukusetshenziswa kwamandla okulinda (okungaguquki), okwenza uhlelo lusebenzise kahle amandla.

3. Ukuzihlukanisa Okungcono

• Idivayisi ngayinye "ihleli" kungqimba lwe-oxide, okunciphisa kakhulu ukuphazamiseka kukagesi phakathi kwamadivayisi. Lokhu kuthuthukisa ukuzinza lapho kuhlanganiswa amasekethe e-analog + digital, amayunithi okuphatha amandla, kanye namamojula e-RF ku-chip efanayo.

4. Ukushisa Okuthuthukisiwe Nokubekezelelana Kokushisa Okuphezulu

• Izindleko ezikhiqizwa yimisebe cishe azisakazeki kakhulu nge-substrate, okwenza amadivayisi e-SOI aphephe futhi athembeke kakhulu ezindaweni ezinemisebe ephezulu njengezindiza.
• Ukwanda komthamo wokuvuza emazingeni okushisa aphezulu akukubi kangako, okuzuzisa kakhulu kuma-elekthronikhi ezimoto kanye nezinhlelo zokulawula zezimboni.

5. Kuhle Ekukhuliseni Okuqhubekayo

• Njengoba kunesendlalelo se-silicon esincane kakhulu phezulu kanye nesendlalelo se-oxide esifihliwe ngaphansi, imiphumela yesiteshi esifushane ilawulwa kangcono, okwenza kube lula ukugcina ukuziphatha okuzinzile kwedivayisi njengoba ama-node enqubo eqhubeka nokuncipha.

Ubuchwepheshe be-SOI sebuvele busetshenziswa emikhakheni eminingi. Kuma-electronics abathengi, busetshenziswa kumamojula we-RF front-end wama-smartphone, njengezihlungi ze-5G. Kuma-electronics ezimoto, buhlinzeka ngeplatifomu yenqubo ezinzile yama-radar chips emotweni. Emkhakheni wezindiza, busetshenziswa emishinini yokuxhumana ngesathelayithi enokwethenjelwa kakhulu. Kumadivayisi ezokwelapha, i-SOI isekela ukwakheka nokusetshenziswa kwezinzwa zezokwelapha ezingafakwa kanye nezinhlobo ezahlukene zama-chip okuqapha anamandla aphansi.

Inkampani yethu inikeza amaphrojekthi enziwe ngokwezifiso ama-wafers e-silicon carrier e-single-crystal:

• Ubukhulu be-silicon substrate: 100 μm / 300 μm / 400 μm / 500 μm / 625 μm nangaphezulu

• Ubukhulu be-SiO₂: kusuka ku-100 nm kuya ku-10 μm

• Isendlalelo se-silicon esisebenzayo: ≥ 20 nm