I kēia manawa, ke hoʻololi nei ka ʻoihana SiC mai 150 mm (6 iniha) i 200 mm (8 iniha). I mea e hoʻokō ai i ka koi wikiwiki no ka nui-nui, kiʻekiʻe kiʻekiʻe SiC homoepitaxial wafers i ka ʻoihana, 150mm a me 200mm.4H-SiC homoepitaxial wafersua hoʻomākaukau maikaʻi ʻia ma nā substrate home me ka hoʻohana ʻana i nā lako ulu ulu epitaxial 200mm SiC. Ua hoʻomohala ʻia kahi kaʻina hana homoepitaxial kūpono no 150mm a me 200mm, kahi e hiki ai ke ʻoi aku ka nui o ka ulu epitaxial ma mua o 60um / h. ʻOiai e hālāwai ana me ka epitaxy kiʻekiʻe, maikaʻi ka maikaʻi o ka wafer epitaxial. Ka mānoanoa uniformity o 150 mm a me 200 mmSiC epitaxial wafersHiki ke hoʻomalu ʻia i loko o 1.5%, ʻoi aku ka liʻiliʻi o ka hoʻohālikelike ʻana ma mua o 3%, ʻoi aku ka liʻiliʻi o ka defect defect ma mua o 0.3 particles/cm2, a ʻo ka epitaxial surface roughness root mean square Ra ʻaʻole ia ma mua o 0.15nm, a ʻo nā mea hōʻailona kumu a pau aia ma ka pae kiʻekiʻe o ka ʻoihana.
Silicon Carbide (SiC)ʻo ia kekahi o nā ʻelele o nā mea semiconductor hanauna ʻekolu. Loaʻa iā ia nā hiʻohiʻona o ke kiʻekiʻe breakdown kahua ikaika, maikaʻi thermal conductivity, nui electron saturation drift velocity, a me ka ikaika radiation pale. Ua hoʻonui nui ʻo ia i ka hiki ke hoʻololi i ka ikehu o nā mea mana a hiki ke hoʻokō i nā koi lawelawe o ka hanauna hou o nā lako uila uila no nā mea me ka mana kiʻekiʻe, liʻiliʻi liʻiliʻi, kiʻekiʻe wela, kiʻekiʻe radiation a me nā kūlana koʻikoʻi ʻē aʻe. Hiki iā ia ke hōʻemi i ka lewa, hoʻemi i ka hoʻohana ʻana i ka mana a hoʻemi i nā koi hoʻomaha. Ua lawe mai ia i nā hoʻololi hoʻololi hou i nā kaʻa ikehu hou, ka lawe kaʻaahi, nā mākau akamai a me nā kahua ʻē aʻe. No laila, ua ʻike ʻia nā semiconductor carbide silicon ma ke ʻano he mea kūpono e alakaʻi i ka hanauna e hiki mai ana o nā mana uila mana kiʻekiʻe. I nā makahiki i hala iho nei, mahalo i ke kākoʻo kulekele aupuni no ka hoʻomohala ʻana i ke kolu o ka hanauna semiconductor ʻoihana, ʻo ka noiʻi a me ka hoʻomohala ʻana a me ke kūkulu ʻana o ka ʻōnaehana ʻoihana ʻenehana 150 mm SiC ua hoʻopau maoli ʻia ma Kina, a ua hōʻoia ʻia ka palekana o ke kaulahao ʻoihana. No laila, ua neʻe mālie ka manaʻo o ka ʻoihana i ka hoʻokele kumukūʻai a me ka hoʻomaikaʻi ʻana i ka pono. E like me ka mea i hōʻike ʻia ma ka Papa 1, i hoʻohālikelike ʻia me 150 mm, 200 mm SiC he ʻoi aku ka nui o ka hoʻohana ʻana i ka lihi, a hiki ke hoʻonui ʻia ka hoʻopuka ʻana o nā pahu wafer hoʻokahi ma kahi o 1.8 mau manawa. Ma hope o ke oʻo ʻana o ka ʻenehana, hiki ke hoʻemi ʻia ke kumukūʻai hana o kahi pahu hoʻokahi e 30%. ʻO ka holomua ʻenehana o 200 mm he ala pololei ia o ka "hōʻemi ʻana i nā kumukūʻai a me ka hoʻonui ʻana i ka pono", a ʻo ia hoʻi ke kī no ka ʻoihana semiconductor o koʻu ʻāina e "holo like" a i ʻole "alakaʻi".
ʻOkoʻa mai ke kaʻina hana Si,ʻO nā mea mana semiconductor SiCua hana ʻia a hoʻomākaukau ʻia me nā papa epitaxial e like me ka pōhaku kihi. ʻO nā wafers epitaxial nā mea waiwai kumu no nā mana mana SiC. ʻO ka maikaʻi o ka papa epitaxial e hoʻoholo pololei i ka hua o ka mea hana, a ʻo kāna kumukūʻai he 20% o ke kumukūʻai hana chip. No laila, ʻo ka ulu epitaxial kahi loulou waena koʻikoʻi i nā mana mana SiC. Hoʻoholo ʻia ka palena kiʻekiʻe o ka pae kaʻina hana epitaxial e nā mea hana epitaxial. I kēia manawa, ʻoi aku ka kiʻekiʻe o ka pae localization o 150mm SiC epitaxial mea hana ma Kina, akā ʻo ka hoʻolālā holoʻokoʻa o 200mm ma hope o ka pae honua i ka manawa like. No laila, i mea e hoʻoponopono ai i nā pilikia koʻikoʻi a me nā pilikia bottleneck o ka nui-nui, kiʻekiʻe kiʻekiʻe o ka epitaxial material manufacturing no ka hoʻomohala ʻana i ka ʻoihana semiconductor home ʻekolu-hanauna, ua hoʻolauna kēia pepa i ka 200 mm SiC epitaxial lako i hoʻomohala maikaʻi ʻia ma koʻu ʻāina, a aʻo i ke kaʻina hana epitaxial. Ma ka optimizing kaʻina hana e like me ke kaʻina hana, lawe kinoea kahe kahe, C/Si lākiō, etc., ka hoʻokoloʻana uniformity <3%, mānoanoa non-uniformity <1.5%, roughness Ra <0.2 nm a me ka fatal defect density <0.3 grains/cm2 o 150 mm a me 200 mm SiC epitaxial wafers me ka epitaxial wafers 200 mm kūʻokoʻa. Hiki i ka pae kaʻina hana ke hoʻokō i nā pono o ka hoʻomākaukau ʻana i ka mana mana SiC kiʻekiʻe.
1 Hoao
1.1 Kumu oSiC epitaxialkaʻina hana
ʻO ka 4H-SiC homoepitaxial ulu kaʻina hana maʻamau he 2 mau ʻanuʻu koʻikoʻi, ʻo ia hoʻi, kiʻekiʻe-mehana in-situ etching o 4H-SiC substrate a me ka homogeneous chemical vapor deposition process. ʻO ke kumu nui o ka substrate in-situ etching ʻo ia ka wehe ʻana i ka pōʻino o lalo o ka substrate ma hope o ka wafer polishing, ke koena o ka wai polishing, nā ʻāpana a me ka papa oxide, a hiki ke hoʻokumu ʻia kahi ʻano hana atomic maʻamau ma luna o ka substrate ma ka etching. Hana ʻia ka etching in-situ i loko o ka lewa hydrogen. E like me nā koi kaʻina hana maoli, hiki ke hoʻohui ʻia kahi wahi liʻiliʻi o ke kinoea kōkua, e like me ka hydrogen chloride, propane, ethylene a i ʻole silane. ʻO ka mahana o ka hydrogen etching in-situ ka mea maʻamau ma luna o 1 600 ℃, a ʻo ke kaomi o ke keʻena pane e hoʻomalu mau ʻia ma lalo o 2 × 104 Pa i ka wā o ke kaʻina hana etching.
Ma hope o ka ho'ā 'ia 'ana o ka ili o ka substrate e ka etching in-situ, komo ia i ke ka'ina deposition kemika kemika ki'eki'e, 'o ia ho'i, ke kumu ulu (e like me ethylene/propane, TCS/silane), kumu doping (n-type doping source nitrogen, p-type doping source TMAl), a me ke kinoea kōkua e like me ka hydrogen chloride e lawe 'ia i ke kinoea kahe nui. Ma hope o ka hana ʻana o ke kinoea i loko o ke keʻena hoʻonā wela kiʻekiʻe, hoʻololi ʻia kahi ʻāpana o ka precursor a me nā adsorbs ma ka ʻili wafer, a me kahi papa epitaxial 4H-SiC homogeneous hoʻokahi me kahi ʻano doping kikoʻī, mānoanoa kikoʻī, a ʻoi aku ka maikaʻi ma luna o ka substrate me ka hoʻohana ʻana i ka substrate 4H-SiC substrate hoʻokahi. Ma hope o nā makahiki o ka ʻimi ʻenehana, ʻo ka ʻenehana homoepitaxial 4H-SiC ua ulu maoli a hoʻohana nui ʻia i ka hana ʻoihana. ʻO ka ʻenehana homoepitaxial 4H-SiC i hoʻohana nui ʻia ma ka honua he ʻelua mau hiʻohiʻona maʻamau:
(1) Ke hoʻohana nei i kahi axis off (e pili ana i ka mokulele aniani <0001>, e pili ana i ka <11-20> kuhikuhi aniani) substrate ʻoki ʻokiʻoki ma ke ʻano he laʻana, waiho ʻia kahi papa epitaxial 4H-SiC maʻemaʻe kiʻekiʻe me ka ʻole o nā haumia ma luna o ka substrate ma ke ʻano o ke ʻano o ka ulu ʻana. ʻO ka ulu mua ʻana o 4H-SiC homepitaxial i hoʻohana i kahi substrate kristal maikaʻi, ʻo ia hoʻi, ka <0001> Si plane no ka ulu ʻana. He haʻahaʻa ka mānoanoa o nā ʻanuʻu atomika ma ka ʻili o ka substrate kristal maikaʻi a he ākea nā pā. He mea maʻalahi ka ulu ʻana o ka nucleation ʻelua-dimensional i ka wā o ke kaʻina epitaxy e hana i ka 3C crystal SiC (3C-SiC). Ma ka ʻoki ʻana o ka axis, hiki ke hoʻokomo ʻia nā ʻanuʻu atomika ākea ākea ākea ma ka ʻili o ka substrate 4H-SiC <0001>, a hiki i ka precursor adsorbed hiki ke hoʻokō pono i ke kūlana ʻanuʻu atomika me ka haʻahaʻa haʻahaʻa o ka ikehu ma o ka diffusion ili. Ma ka ʻanuʻu, ʻokoʻa ka precursor atom / molecular group hoʻopaʻa kūlana, no laila, i ke ʻano o ka ulu ʻana o ke kaʻina hana, hiki i ka papa epitaxial ke hoʻoili pono i ka Si-C papalua atomic layer stacking sequence o ka substrate e hana i hoʻokahi aniani me ka pae aniani like me ka substrate.
(2) Loaʻa ka ulu ʻana o ka epitaxial kiʻekiʻe ma o ka hoʻokomo ʻana i kahi kumu silika chlorine. I loko o nā ʻōnaehana hoʻoheheʻe kemika SiC maʻamau, ʻo silane a me propane (a i ʻole ethylene) nā kumu ulu nui. Ma ke kaʻina o ka hoʻonui ʻana i ka ulu ʻana ma o ka hoʻonui ʻana i ke kahe o ke kumu ulu, e like me ka piʻi ʻana o ka equilibrium partial pressure o ka ʻāpana silika, ua maʻalahi ka hana ʻana i nā pūʻulu silika e ka homogeneous gas phase nucleation, kahi e hoʻemi nui ai i ka hoʻohana ʻana o ke kumu silika. ʻO ka hoʻokumu ʻia ʻana o nā puʻupuʻu silika e kaupalena nui i ka hoʻomaikaʻi ʻana o ka ulu ulu epitaxial. I ka manawa like, hiki i nā pūʻulu silika ke hoʻopilikia i ka ulu ʻana o ke kahe a hoʻoulu i ka nucleation defect. I mea e pale aku ai i ka nucleation kinoea homogeneous a hoʻonui i ka nui o ka ulu ʻana o ka epitaxial, ʻo ka hoʻokomo ʻana i nā kumu silicon chlorine i kēia manawa ke ala nui e hoʻonui ai i ka ulu epitaxial o 4H-SiC.
1.2 200 mm (8-ʻīniha) SiC epitaxial lako a me nā kūlana hana
ʻO nā hoʻokolohua i wehewehe ʻia ma kēia pepa ua hana ʻia ma kahi 150/200 mm (6/8-ʻīniha) kūpono monolithic horizontal heat wall SiC epitaxial lako hana kūʻokoʻa e ka 48th Institute of China Electronics Technology Group Corporation. Kākoʻo ka umu epitaxial i ka hoʻouka ʻana a me ka wehe ʻana i ka wafer. He kiʻi kiʻi kiʻi ʻo 1 o ke ʻano o loko o ke keʻena pane o nā mea epitaxial. E like me ka hoike ana ma ka Figure 1, ka paia o waho o ke keʻena hopena he quartz bele me ka wai-ʻoluʻolu interlayer, a me ka loko o ka bele he kiʻekiʻe-mahana reaction keʻena, ka mea i hakuʻia o thermal insulation kalapona manaʻo, kiʻekiʻe-maʻemaʻe kūikawā graphite lua, graphite kinoea-floating holo ana kumu, etc. ʻO ke keʻena i loko o ka bele ua hoʻomehana electromagnetically e kahi lako mana induction medium-frequency. E like me ka mea i hōʻike ʻia ma ke Kiʻi 1 (b), ke kahe ʻana o ke kinoea lawe, ke kinoea hoʻihoʻi, a me ke kinoea doping ma ka ʻili o ka wafer ma ke kahe laminar ākea mai ka upstream o ke keʻena pane a i lalo o ke keʻena hopena a hoʻokuʻu ʻia mai ka hopena kinoea huelo. No ka hōʻoia ʻana i ka paʻa o ka wafer, ʻo ka wafer i lawe ʻia e ke kumu lana ea e hoʻololi mau ʻia i ka wā o ke kaʻina hana.
ʻO ka substrate i hoʻohana ʻia i ka hoʻokolohua he pāʻoihana 150 mm, 200 mm (6 ʻīniha, 8 ʻīniha) <1120> kuhikuhi 4°off-angle conductive n-type 4H-SiC pālua ʻaoʻao polished SiC substrate i hana ʻia e Shanxi Shuoke Crystal. Hoʻohana ʻia ʻo Trichlorosilane (SiHCl3, TCS) a me ethylene (C2H4) ma ke ʻano he kumu ulu nui i ka hoʻokolohua kaʻina hana, ma waena o TCS a me C2H4 i hoʻohana ʻia e like me ke kumu silika a me ke kumu kalapona, hoʻohana ʻia ka nitrogen (N2) kiʻekiʻe ma ke kumu doping n-type, a hoʻohana ʻia ka hydrogen (H2) e like me ke kinoea dilution a me ke kinoea lawe. ʻO ka pae wela o ke kaʻina hana epitaxial ʻo 1 600 ~ 1 660 ℃, ʻo ke kaomi kaʻina hana he 8 × 103 ~ 12 × 103 Pa, a ʻo ka holo kahe o ke kinoea H2 he 100～140 L / min.
1.3 Epitaxial wafer ho'āʻo a me ke ano
Ua hoʻohana ʻia ka ʻike kikoʻī infrared Fourier (mea hana lako Thermalfisher, model iS50) a me ka mea hōʻike hoʻopaʻa ʻana i ka mercury probe (mea hana lako Semilab, model 530L) e ʻike i ke ʻano a me ka puʻunaue ʻana o ka mānoanoa o ka papa epitaxial a me ka neʻe ʻana o ka doping; ua hoʻoholo ʻia ka mānoanoa a me ka neʻe ʻana o ka doping o kēlā me kēia kiko i loko o ka papa epitaxial ma ka lawe ʻana i nā kiko ma ka laina anawaena e kū ana i ka laina maʻamau o ka lihi kuhikuhi nui ma 45 ° ma ke kikowaena o ka wafer me ka wehe ʻana o ka 5 mm. No ka wafer 150 mm, ua laweia he 9 mau kiko ma ka laina anawaena hookahi (he elua anawaena e pili ana i kekahi i kekahi), a no ka wafer 200 mm, ua laweia he 21 mau helu, e like me ka hoike ana ma ke Kii 2. Ua hoohanaia kekahi microscope atomic force (mea hana Bruker, model Dimension Icon) e koho i 30 μm wahi a me ka lihi o ka mmx30 μm. ka wehe ʻana) o ka wafer epitaxial e hoʻāʻo ai i ka ʻili o ka ʻili o ka papa epitaxial; ua ana ʻia nā hemahema o ka papa epitaxial me ka hoʻohana ʻana i ka mea hoʻāʻo kīnā ʻili (mea hana ʻenehana China Electronics Ua hōʻike ʻia ka mea kiʻi kiʻi 3D e kahi mea ʻike radar (model Mars 4410 pro) mai Kefenghua.
Ka manawa hoʻouna: Sep-04-2024