Tam sim no, kev lag luam SiC tab tom hloov pauv ntawm 150 hli (6 nti) mus rau 200 hli (8 nti). Yuav kom ua tau raws li qhov xav tau ceev ceev rau cov wafers SiC homoepitaxial loj, zoo hauv kev lag luam, 150 hli thiab 200 hli4H-SiC homoepitaxial waferstau npaj tiav rau ntawm cov khoom siv hauv tsev siv cov khoom siv loj hlob 200 hli SiC epitaxial uas tsim tau ywj pheej. Ib qho txheej txheem homoepitaxial uas haum rau 150 hli thiab 200 hli tau tsim, uas qhov kev loj hlob ntawm epitaxial tuaj yeem siab dua 60um / h. Thaum ua tau raws li qhov ceev ceev epitaxy, qhov zoo ntawm epitaxial wafer zoo heev. Qhov tuab sib xws ntawm 150 hli thiab 200 hliSiC epitaxial waferstuaj yeem tswj tau hauv 1.5%, qhov sib npaug ntawm qhov sib npaug tsawg dua 3%, qhov ceev ntawm qhov tsis zoo yog tsawg dua 0.3 cov khoom me me / cm2, thiab qhov roughness ntawm qhov chaw epitaxial surface roughness hauv paus nruab nrab square Ra tsawg dua 0.15nm, thiab txhua qhov ntsuas tseem ceeb yog nyob rau theem siab ntawm kev lag luam.
Silicon Carbide (SiC)yog ib qho ntawm cov neeg sawv cev ntawm cov ntaub ntawv semiconductor tiam thib peb. Nws muaj cov yam ntxwv ntawm lub zog tawg siab, kev ua kom sov zoo heev, qhov ceev ntawm electron saturation drift, thiab kev tiv thaiv hluav taws xob muaj zog. Nws tau nthuav dav lub peev xwm ua haujlwm ntawm cov khoom siv hluav taws xob thiab tuaj yeem ua tau raws li cov kev xav tau ntawm cov khoom siv hluav taws xob tiam tom ntej rau cov khoom siv uas muaj zog siab, me me, kub siab, hluav taws xob siab thiab lwm yam xwm txheej hnyav. Nws tuaj yeem txo qhov chaw, txo kev siv hluav taws xob thiab txo qhov yuav tsum tau txias. Nws tau coj kev hloov pauv tshiab rau cov tsheb fais fab tshiab, kev thauj mus los ntawm tsheb ciav hlau, smart grids thiab lwm yam teb. Yog li ntawd, silicon carbide semiconductors tau lees paub tias yog cov khoom siv zoo tshaj plaws uas yuav ua rau tiam tom ntej ntawm cov khoom siv hluav taws xob muaj zog siab. Nyob rau hauv xyoo tas los no, ua tsaug rau txoj cai hauv tebchaws rau kev txhim kho kev lag luam semiconductor tiam thib peb, kev tshawb fawb thiab kev txhim kho thiab kev tsim kho ntawm 150 hli SiC khoom siv kev lag luam system tau ua tiav hauv Suav teb, thiab kev ruaj ntseg ntawm cov saw hlau kev lag luam tau lav. Yog li ntawd, qhov kev tsom mus rau kev lag luam tau maj mam hloov mus rau kev tswj tus nqi thiab kev txhim kho kev ua haujlwm zoo. Raws li tau pom hauv Rooj 1, piv rau 150 hli, 200 hli SiC muaj qhov siv ntug siab dua, thiab cov zis ntawm cov wafer chips ib leeg tuaj yeem nce ntxiv li 1.8 npaug. Tom qab thev naus laus zis loj hlob tuaj, tus nqi tsim khoom ntawm ib leeg chip tuaj yeem txo tau 30%. Kev tshawb pom thev naus laus zis ntawm 200 hli yog ib txoj hauv kev ncaj qha ntawm "txo cov nqi thiab nce kev ua haujlwm", thiab nws tseem yog qhov tseem ceeb rau kuv lub teb chaws kev lag luam semiconductor kom "khiav sib luag" lossis txawm tias "ua tus thawj coj".
Txawv ntawm cov txheej txheem Si ntaus ntawv,Cov khoom siv hluav taws xob semiconductor SiCTag nrho cov no yog ua tiav thiab npaj nrog cov txheej epitaxial ua lub hauv paus tseem ceeb. Epitaxial wafers yog cov khoom siv tseem ceeb rau SiC fais fab khoom siv. Qhov zoo ntawm cov txheej epitaxial ncaj qha txiav txim siab qhov txiaj ntsig ntawm lub cuab yeej, thiab nws tus nqi suav txog 20% ntawm tus nqi tsim khoom nti. Yog li ntawd, kev loj hlob epitaxial yog qhov txuas nruab nrab tseem ceeb hauv SiC fais fab khoom siv. Qhov txwv siab tshaj plaws ntawm qib txheej txheem epitaxial yog txiav txim siab los ntawm cov khoom siv epitaxial. Tam sim no, qib kev teeb tsa ntawm 150mm SiC epitaxial khoom siv hauv Suav teb yog qhov siab heev, tab sis qhov kev teeb tsa tag nrho ntawm 200mm poob qis dua qib thoob ntiaj teb tib lub sijhawm. Yog li ntawd, txhawm rau daws cov kev xav tau ceev thiab cov teeb meem bottleneck ntawm cov khoom siv loj, zoo epitaxial tsim khoom rau kev txhim kho kev lag luam semiconductor tiam thib peb hauv tsev, daim ntawv no qhia txog 200 hli SiC epitaxial khoom siv tau tsim tiav hauv kuv lub tebchaws, thiab kawm txog cov txheej txheem epitaxial. Los ntawm kev ua kom zoo dua cov txheej txheem xws li qhov kub thiab txias ntawm cov txheej txheem, tus nqi ntws ntawm cov roj nqa, C/Si piv, thiab lwm yam, qhov sib npaug ntawm qhov sib npaug <3%, qhov tuab tsis sib xws <1.5%, qhov ntxhib Ra <0.2 nm thiab qhov tsis zoo ntawm qhov hnyav <0.3 nplej/cm2 ntawm 150 hli thiab 200 hli SiC epitaxial wafers nrog 200 hli silicon carbide epitaxial furnace uas tsim tau ywj pheej tau txais. Qib txheej txheem khoom siv tuaj yeem ua tau raws li qhov xav tau ntawm kev npaj khoom siv fais fab SiC zoo.
1 Kev Sim
1.1 Lub Ntsiab Cai ntawmSiC epitaxialtxheej txheem
Cov txheej txheem loj hlob 4H-SiC homoepitaxial feem ntau suav nrog 2 kauj ruam tseem ceeb, uas yog, qhov kub siab hauv-situ etching ntawm 4H-SiC substrate thiab cov txheej txheem tso pa tshuaj homogeneous. Lub hom phiaj tseem ceeb ntawm substrate hauv-situ etching yog tshem tawm qhov puas tsuaj ntawm cov substrate tom qab wafer polishing, cov kua polishing seem, cov khoom me me thiab cov txheej oxide, thiab cov qauv atomic kauj ruam ib txwm tuaj yeem tsim rau ntawm qhov chaw substrate los ntawm etching. In-situ etching feem ntau yog ua tiav hauv huab cua hydrogen. Raws li cov txheej txheem xav tau tiag tiag, me me ntawm cov roj pabcuam kuj tuaj yeem ntxiv, xws li hydrogen chloride, propane, ethylene lossis silane. Qhov kub ntawm in-situ hydrogen etching feem ntau yog siab dua 1 600 ℃, thiab lub siab ntawm lub chamber tshuaj feem ntau yog tswj hwm hauv qab 2 × 104 Pa thaum lub sijhawm etching.
Tom qab lub substrate nto raug qhib los ntawm in-situ etching, nws nkag mus rau hauv cov txheej txheem kub-kub tshuaj vapor deposition, uas yog, qhov chaw loj hlob (xws li ethylene / propane, TCS / silane), doping qhov chaw (n-hom doping qhov chaw nitrogen, p-hom doping qhov chaw TMAl), thiab cov roj pabcuam xws li hydrogen chloride raug thauj mus rau chav tshuaj tiv thaiv los ntawm cov roj loj (feem ntau yog hydrogen). Tom qab cov roj reacts hauv chav tshuaj tiv thaiv kub-kub, ib feem ntawm cov precursor reacts chemically thiab adsorbs ntawm qhov chaw wafer, thiab ib txheej epitaxial ib leeg-crystal homogeneous 4H-SiC nrog qhov tshwj xeeb doping concentration, tshwj xeeb thickness, thiab zoo dua yog tsim rau ntawm qhov chaw substrate siv ib leeg-crystal 4H-SiC substrate ua tus qauv. Tom qab ntau xyoo ntawm kev tshawb nrhiav kev siv tshuab, 4H-SiC homoepitaxial technology tau loj hlob thiab siv dav hauv kev tsim khoom lag luam. Cov thev naus laus zis 4H-SiC homoepitaxial siv dav tshaj plaws hauv ntiaj teb muaj ob yam ntxwv zoo:
(1) Siv ib qho tawm-axis (piv rau <0001> lub dav hlau siv lead ua, mus rau <11-20> kev coj siv lead ua) oblique txiav substrate ua tus qauv, ib txheej siab-purity ib leeg-siv lead ua 4H-SiC epitaxial tsis muaj impurities tso rau ntawm lub substrate hauv daim ntawv ntawm cov kauj ruam-ntws loj hlob hom. Thaum ntxov 4H-SiC homoepitaxial kev loj hlob siv lub substrate siv lead ua zoo, uas yog, <0001> Si dav hlau rau kev loj hlob. Qhov ceev ntawm cov kauj ruam atomic ntawm qhov chaw ntawm lub substrate siv lead ua zoo yog qis thiab cov terraces dav. Ob-seem nucleation kev loj hlob yog yooj yim tshwm sim thaum lub sijhawm epitaxy los tsim 3C siv lead ua SiC (3C-SiC). Los ntawm kev txiav tawm-axis, qhov ceev siab, qhov dav dav terrace atomic kauj ruam tuaj yeem qhia rau ntawm qhov chaw ntawm 4H-SiC <0001> substrate, thiab cov adsorbed precursor tuaj yeem mus txog qhov chaw atomic kauj ruam nrog lub zog qis dua los ntawm kev sib kis ntawm qhov chaw. Ntawm cov kauj ruam, qhov chaw sib txuas ntawm cov atom / molecular pawg yog qhov tshwj xeeb, yog li nyob rau hauv hom kev loj hlob ntawm cov kauj ruam, cov txheej epitaxial tuaj yeem ua tiav qhov Si-C ob chav atomic txheej stacking ntawm lub substrate los tsim ib qho siv lead ua ke nrog tib theem siv lead ua ke li lub substrate.
(2) Kev loj hlob sai ntawm epitaxial yog ua tiav los ntawm kev qhia txog cov khoom siv silicon uas muaj chlorine. Hauv cov txheej txheem tso pa tshuaj SiC, silane thiab propane (lossis ethylene) yog cov khoom loj hlob tseem ceeb. Hauv cov txheej txheem ntawm kev nce tus nqi loj hlob los ntawm kev nce tus nqi ntws ntawm qhov chaw loj hlob, raws li qhov sib npaug ntawm qhov siab ntawm cov khoom silicon txuas ntxiv mus, nws yooj yim los tsim cov pawg silicon los ntawm homogeneous gas phase nucleation, uas txo qhov kev siv ntawm cov khoom siv silicon. Kev tsim cov pawg silicon txwv tsis pub txhim kho tus nqi loj hlob epitaxial. Tib lub sijhawm, cov pawg silicon tuaj yeem cuam tshuam kev loj hlob ntawm cov kauj ruam thiab ua rau muaj qhov tsis xws luag. Yuav kom tsis txhob muaj homogeneous gas phase nucleation thiab nce tus nqi loj hlob epitaxial, kev qhia txog cov khoom siv silicon raws li chlorine tam sim no yog txoj hauv kev tseem ceeb los nce tus nqi loj hlob epitaxial ntawm 4H-SiC.
1.2 200 hli (8-nti) SiC epitaxial khoom siv thiab cov xwm txheej txheej txheem
Cov kev sim uas tau piav qhia hauv daim ntawv no tau ua tiav tag nrho ntawm 150/200 hli (6/8-nti) sib xws monolithic phab ntsa kub SiC epitaxial khoom siv ywj pheej tsim los ntawm 48th Institute of China Electronics Technology Group Corporation. Lub cub tawg epitaxial txhawb nqa tag nrho cov wafer loading thiab unloading. Daim duab 1 yog daim duab qhia txog cov qauv sab hauv ntawm lub chamber tshuaj tiv thaiv ntawm cov khoom siv epitaxial. Raws li pom hauv Daim duab 1, phab ntsa sab nraud ntawm lub chamber tshuaj tiv thaiv yog lub tswb quartz nrog cov dej txias interlayer, thiab sab hauv ntawm lub tswb yog lub chamber tshuaj tiv thaiv kub siab, uas yog tsim los ntawm thermal rwb thaiv tsev carbon felt, high-purity tshwj xeeb graphite cavity, graphite roj-floating rotating puag, thiab lwm yam. Tag nrho lub tswb quartz yog them nrog lub cylindrical induction coil, thiab lub chamber tshuaj tiv thaiv sab hauv lub tswb yog electromagnetically cua sov los ntawm lub zog nruab nrab-zaus induction. Raws li pom hauv Daim Duab 1 (b), cov roj nqa, cov roj tshuaj tiv thaiv, thiab cov roj doping txhua yam ntws los ntawm qhov chaw wafer hauv cov dej ntws kab rov tav los ntawm sab saud ntawm lub chamber tshuaj tiv thaiv mus rau sab hauv qab ntawm lub chamber tshuaj tiv thaiv thiab raug tso tawm ntawm qhov kawg ntawm cov roj tw. Txhawm rau kom ntseeg tau tias muaj kev sib xws hauv wafer, lub wafer uas nqa los ntawm lub hauv paus huab cua ntab ib txwm tig thaum lub sijhawm ua haujlwm.
Cov khoom siv hauv kev sim yog cov khoom lag luam 150 hli, 200 hli (6 nti, 8 nti) <1120> kev coj ua 4 ° tawm-lub kaum sab xis conductive n-hom 4H-SiC ob sab polished SiC substrate tsim los ntawm Shanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) thiab ethylene (C2H4) yog siv ua cov chaw loj hlob tseem ceeb hauv kev sim txheej txheem, ntawm cov uas TCS thiab C2H4 yog siv ua silicon qhov chaw thiab carbon qhov chaw feem, nitrogen siab-purity (N2) yog siv ua n-hom doping qhov chaw, thiab hydrogen (H2) yog siv ua roj dilution thiab roj nqa. Qhov kub ntawm cov txheej txheem epitaxial yog 1 600 ~ 1 660 ℃, qhov siab ntawm cov txheej txheem yog 8 × 103 ~ 12 × 103 Pa, thiab H2 cov roj nqa ntws tus nqi yog 100 ~ 140 L / min.
1.3 Kev kuaj thiab kev piav qhia ntawm Epitaxial wafer
Lub tshuab ntsuas Fourier infrared spectrometer (lub chaw tsim khoom siv Thermalfisher, qauv iS50) thiab lub tshuab ntsuas mercury probe concentration tester (lub chaw tsim khoom siv Semilab, qauv 530L) tau siv los piav qhia txog qhov nruab nrab thiab kev faib tawm ntawm cov txheej epitaxial tuab thiab cov doping concentration; qhov tuab thiab cov doping concentration ntawm txhua qhov chaw hauv cov txheej epitaxial tau txiav txim siab los ntawm kev siv cov ntsiab lus raws txoj kab uas hla ntawm txoj kab ib txwm ntawm ntug siv tseem ceeb ntawm 45 ° ntawm qhov chaw nruab nrab ntawm lub wafer nrog 5 hli ntug tshem tawm. Rau 150 hli wafer, 9 cov ntsiab lus tau coj raws ib txoj kab uas hla (ob txoj kab uas hla yog perpendicular rau ib leeg), thiab rau 200 hli wafer, 21 cov ntsiab lus tau coj, raws li pom hauv Daim Duab 2. Lub tshuab kuaj lub zog atomic (lub chaw tsim khoom siv Bruker, qauv Dimension Icon) tau siv los xaiv 30 μm × 30 μm thaj chaw hauv thaj chaw nruab nrab thiab thaj chaw ntug (5 hli ntug tshem tawm) ntawm epitaxial wafer los sim qhov roughness ntawm cov txheej epitaxial; qhov tsis zoo ntawm cov txheej epitaxial tau ntsuas siv lub tshuab ntsuas qhov tsis zoo ntawm qhov chaw (cov khoom siv tsim khoom siv China Electronics Lub tshuab 3D tau ua cim los ntawm lub radar sensor (qauv Mars 4410 pro) los ntawm Kefenghua.
Lub sijhawm tshaj tawm: Cuaj hlis-04-2024