Ugbu a, ụlọ ọrụ SiC na-agbanwe site na 150 mm (inchi 6) gaa na 200 mm (inchi 8). Iji mezuo ọchịchọ dị ngwa maka nnukwu wafers SiC homoepitaxial dị elu na ụlọ ọrụ ahụ, 150mm na 200mm.Wafers homoepitaxial 4H-SiCE ji ngwa uto epitaxial SiC nke 200mm emepụtara nke ọma n'elu ihe ndị dị n'ime ụlọ. E mepụtara usoro homoepitaxial nke dabara adaba maka 150mm na 200mm, nke ọnụego uto epitaxial nwere ike ịdị elu karịa 60um/h. Ọ bụ ezie na ọ na-ezute epitaxial dị elu, ịdị mma nke epitaxial wafer dị mma nke ukwuu. Nha nhata ọkpụrụkpụ nke 150 mm na 200 mmWafers epitaxial SiCenwere ike ijikwa ya n'ime 1.5%, nha nhata nke mkpokọta ahụ erughị 3%, njupụta ntụpọ na-egbu egbu erughị 0.3 irighiri ihe/cm2, mgbọrọgwụ siri ike nke elu epitaxial nkezi Ra erughị 0.15nm, ihe ngosi usoro isi niile dịkwa n'ọkwa dị elu nke ụlọ ọrụ ahụ.
Silicon Carbide (SiC)bụ otu n'ime ndị nnọchite anya ihe ndị na-emepụta semiconductor ọgbọ nke atọ. O nwere njirimara nke ike ubi dị elu, njikwa okpomọkụ dị mma, ọsọ ọsọ nke electron saturation, na ike iguzogide radieshon siri ike. O meela ka ikike nhazi ike nke ngwaọrụ ike gbasaa nke ukwuu ma nwee ike iru ihe achọrọ maka ọgbọ ọzọ nke ngwa eletrọniki ike maka ngwaọrụ nwere ike dị elu, obere nha, okpomọkụ dị elu, radieshon dị elu na ọnọdụ ndị ọzọ dị oke njọ. Ọ nwere ike ibelata oghere, belata oriri ike ma belata ihe achọrọ maka oyi. O wetala mgbanwe mgbanwe na ụgbọ ala ike ọhụrụ, njem ụgbọ okporo ígwè, grid smart na ubi ndị ọzọ. Ya mere, a matala semiconductor silicon carbide dị ka ihe kacha mma ga-eduga ọgbọ ọzọ nke ngwaọrụ eletrọniki ike dị elu. N'afọ ndị na-adịbeghị anya, site na nkwado amụma mba maka mmepe nke ụlọ ọrụ semiconductor ọgbọ nke atọ, emechara nyocha na mmepe na owuwu nke sistemụ ụlọ ọrụ ngwaọrụ SiC 150 mm na China, a na-ekwe nkwa nchekwa nke agbụ ụlọ ọrụ. Ya mere, isi ihe ụlọ ọrụ ahụ agbanweela nwayọ nwayọ gaa na njikwa ọnụ ahịa na mmezi arụmọrụ. Dịka egosiri na Tebụl 1, ma e jiri ya tụnyere 150 mm, SiC 200 mm nwere oke ojiji dị elu, mmepụta nke otu wafer chips nwere ike ịbawanye ihe dị ka ugboro 1.8. Mgbe teknụzụ ahụ tolitere, ọnụ ahịa nrụpụta nke otu chips nwere ike ibelata site na 30%. Nkwalite teknụzụ nke 200 mm bụ ụzọ kpọmkwem isi "belata ọnụ ahịa na ịbawanye arụmọrụ", ọ bụkwa isi ihe mere ụlọ ọrụ semiconductor nke mba m ji "agba ọsọ n'usoro" ma ọ bụ ọbụna "lead".
Dị iche na usoro ngwaọrụ Si,Ngwaọrụ ike SiC semiconductorA na-ahazi ma na-akwadebe ha niile site na iji akwa epitaxial dị ka isi nkuku. Wafers Epitaxial bụ ihe dị mkpa maka ngwaọrụ ike SiC. Ogo nke akwa epitaxial na-ekpebi mmepụta nke ngwaọrụ ahụ ozugbo, ọnụ ahịa ya na-abụkwa 20% nke ọnụ ahịa mmepụta chip. Ya mere, uto epitaxial bụ njikọ dị mkpa na ngwaọrụ ike SiC. Oke elu nke ọkwa usoro epitaxial na-ekpebi site na akụrụngwa epitaxial. Ugbu a, ogo mpaghara nke akụrụngwa epitaxial SiC 150mm na China dị elu, mana nhazi zuru oke nke 200mm na-agbada n'azụ ọkwa mba ụwa n'otu oge ahụ. Ya mere, iji dozie mkpa ngwa ngwa na nsogbu mgbochi nke mmepụta ihe epitaxial buru ibu, dị elu maka mmepe nke ụlọ ọrụ semiconductor ọgbọ nke atọ n'ime ụlọ, akwụkwọ a na-ewebata akụrụngwa epitaxial SiC 200 mm nke emepụtara nke ọma na mba m, ma na-amụ usoro epitaxial. Site n'ịhazi paramita usoro dịka okpomọkụ usoro, ọnụego mmiri gas na-ebu ibu, oke C/Si, wdg, a na-enweta otu nha anya <3%, ọkpụrụkpụ na-adịghị otu <1.5%, oke ike Ra <0.2 nm na njupụta ntụpọ na-egbu egbu <0.3 ọka/cm2 nke 150 mm na 200 mm SiC epitaxial wafers nwere ọkụ silikoni carbide 200 mm nke emepụtara n'onwe ya. Ọkwa usoro akụrụngwa nwere ike izute mkpa nkwadebe ngwaọrụ ike SiC dị elu.
Nnwale 1
1.1 Ụkpụrụ nkeAkụkụ epitaxial SiCusoro
Usoro uto homoepitaxial nke 4H-SiC gụnyere usoro abụọ dị mkpa, ya bụ, ime ka ihe dị n'ime okpomọkụ dị elu nke ihe dị n'ime 4H-SiC na usoro itinye anwụrụ kemịkalụ yiri nke ahụ. Isi ihe mere e ji eme ka ihe dị n'ime ala bụ iwepụ mmebi dị n'okpuru ala nke ihe dị n'ime ala mgbe emechara ime ka ihe dị n'ime ya dị ọcha, mmiri ihe na-eme ka ihe dị n'ime ya dị ọcha, ihe ndị dị n'ime ya na oyi akwa oxide, enwere ike ịmepụta usoro nzọụkwụ atọm nkịtị n'elu ihe dị n'ime ala site na ime ka ihe dị n'ime ala dị n'ime ala. A na-emekarị ime ka ihe dị n'ime ala dị n'ime ala dị n'ime ala dị n'ime ala. Dịka ihe achọrọ maka usoro ahụ si dị, enwere ike itinye obere gas enyemaka, dị ka hydrogen chloride, propane, ethylene ma ọ bụ silane. Okpomọkụ nke ime ka ihe dị n'ime ala dị n'ime ala dị n'elu 1 600 ℃, a na-achịkwakwa nrụgide nke ụlọ mmeghachi omume n'okpuru 2 × 104 Pa n'oge usoro ime ka ihe dị n'ime ala dị n'ime ala.
Mgbe e tinyere ihe ndị dị n'ime ala ahụ n'ime ihe e ji eme ka ọ rụọ ọrụ, ọ na-abanye n'usoro itinye ihe ndị dị n'ime ala nke nwere okpomọkụ dị elu, ya bụ, isi iyi uto (dịka ethylene/propane, TCS/silane), isi iyi doping (n-type doping source nitrogen, p-type doping source TAl), na gas enyemaka dị ka hydrogen chloride ka a na-ebuga na ụlọ mmeghachi omume site na nnukwu mmiri nke gas ebu (na-abụkarị hydrogen). Mgbe gas ahụ meghachiri omume na ụlọ mmeghachi omume okpomọkụ dị elu, akụkụ nke precursor na-emeghachi omume na kemịkalụ ma na-abanye n'elu wafer, a na-emepụta otu kristal yiri nke nwere njupụta doping, ọkpụrụkpụ kpọmkwem, na ịdị mma dị elu na elu substrate site na iji otu kristal 4H-SiC substrate dị ka ihe nlereanya. Mgbe ọtụtụ afọ nke nyocha teknụzụ gasịrị, teknụzụ homoepitaxial 4H-SiC etoola ma ejiri ya mee ihe nke ukwuu na mmepụta ụlọ ọrụ. Teknụzụ homoepitaxial 4H-SiC nke a na-ejikarị eme ihe n'ụwa nwere njirimara abụọ a na-ahụkarị:
(1) Site na iji ihe e ji ewepụ ihe (ma e jiri ya tụnyere kristal <0001> plane, gaa na ntụziaka kristal <11-20>) oblique cut substrate dị ka template, a na-etinye akwa epitaxial 4H-SiC dị ọcha nke na-enweghị ihe ruru unyi na substrate ahụ n'ụdị usoro uto nzọụkwụ-flow. Mmalite uto homoepitaxial 4H-SiC jiri ihe mkpuchi kristal dị mma, ya bụ, ihe mkpuchi <0001> Si maka uto. Njupụta nke nzọụkwụ atọm n'elu ihe mkpuchi kristal dị mma dị ala ma mbara ala dị obosara. Ọ dị mfe itolite nucleation nke akụkụ abụọ n'oge usoro epitaxy iji mepụta kristal SiC 3C (3C-SiC). Site na ịkpụ axis, enwere ike itinye nzọụkwụ atọm dị warara na elu nke ihe mkpuchi 4H-SiC <0001>, ihe nkwado ahụ nwere ike iru ọnọdụ nzọụkwụ atọm nke ọma site na ike dị ala site na mgbasa elu. N'usoro a, ọnọdụ njikọ otu atọm/molekul mbụ pụrụ iche, yabụ na ọnọdụ uto usoro a, oyi akwa epitaxial nwere ike keta usoro nhazi nke oyi akwa atọm Si-C abụọ nke substrate ahụ nke ọma iji mepụta otu kristal nwere otu usoro kristal dị ka substrate ahụ.
(2) A na-enweta uto epitaxial dị elu site n'iwebata isi iyi silicon nwere chlorine. Na sistemụ nchekwa anwụrụ ọkụ kemịkalụ SiC ọdịnala, silane na propane (ma ọ bụ ethylene) bụ isi iyi uto. N'ime usoro ịbawanye ọnụego uto site na ịbawanye ọnụego mmiri isi mmalite uto, ka nrụgide akụkụ nke ihe silicon na-aga n'ihu na-abawanye, ọ dị mfe ịmepụta ụyọkọ silicon site na nhazi gas nke otu, nke na-ebelata ọnụego ojiji nke isi iyi silicon nke ukwuu. Nhazi nke ụyọkọ silicon na-egbochi mmụba nke ọnụego uto epitaxial. N'otu oge ahụ, ụyọkọ silicon nwere ike imebi uto mmiri nzọụkwụ ma kpatara mmebi nucleation. Iji zere nhazi gas nke otu ma mee ka ọnụego uto epitaxial dịkwuo elu, iwebata isi iyi silicon dabere na chlorine bụ ụzọ bụ isi ugbu a iji mee ka ọnụego uto epitaxial nke 4H-SiC dịkwuo elu.
Ngwaọrụ epitaxial SiC 1.2 200 mm (8-inch) na ọnọdụ usoro
Nnwale ndị a kọwara n'akwụkwọ a bụ nke e mere n'elu ngwa ọrụ SiC epitaxial nke dị 150/200 mm (6/8-inch) nke ụlọ ọrụ 48th Institute of China Electronics Technology Group Corporation mepụtara n'onwe ya. Okpomọkụ epitaxial na-akwado ibu na nbudata wafer akpaka zuru oke. Foto nke 1 bụ eserese atụmatụ nke ụlọ mmeghachi omume nke ngwa epitaxial. Dịka egosiri na Foto nke 1, mgbidi mpụta nke ụlọ mmeghachi omume bụ mgbịrịgba quartz nwere oyi akwa mmiri jụrụ oyi, ime mgbịrịgba ahụ bụkwa ụlọ mmeghachi omume okpomọkụ dị elu, nke mejupụtara ya na carbon felt thermal insulation, oghere graphite pụrụ iche dị ọcha, ntọala na-agbagharị graphite gas, wdg. E ji eriri induction cylindrical cylindrical kpuchie mgbịrịgba quartz dum, a na-ekpokwa ụlọ mmeghachi omume dị n'ime mgbịrịgba ahụ ọkụ electromagnetic site na ike induction ugboro ole na ole. Dịka egosiri na Foto 1 (b), gas ebu, gas mmeghachi omume, na gas doping niile na-agafe n'elu wafer n'ime mmiri laminar kwụ ọtọ site na elu nke ụlọ mmeghachi omume ruo na ala nke ụlọ mmeghachi omume ma na-apụ na njedebe gas ọdụ. Iji hụ na nhazi dị n'ime wafer ahụ, a na-atụgharị wafer nke ntọala ikuku na-ebu mgbe niile n'oge usoro ahụ.
Ihe e ji mee nnwale a bụ ihe e ji eme ihe n'ule ahụ nke dị 150 mm, 200 mm (inchi 6, sentimita 8) <1120> nke a na-eji n-ụdị 4H-SiC nke nwere akụkụ abụọ nke na-eduzi ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe na-eme ka ihe ghara ịdị mma. A na-eji ihe e ji eme ihe n'ule ahụ emepụta ihe dị ka trichlorosilane (SiHCl3, TCS) na ethylene (C2H4) dị ka isi mmalite uto na nnwale ahụ, nke a na-eji TCS na C2H4 dị ka isi iyi silicon na isi iyi carbon, a na-ejikwa nitrogen dị ọcha (N2) dị ka isi iyi n-ụdị n doping, a na-ejikwa hydrogen (H2) dị ka gas dilution na gas na-ebu ibu. Oke okpomọkụ nke usoro epitaxial bụ 1 600 ~ 1 660 ℃, nrụgide usoro ahụ bụ 8 × 103 ~ 12 × 103 Pa, na ọnụego mmiri gas H2 bụ 100 ~ 140 L/min.
1.3 Nnwale na njirimara nke wafer epitaxial
E jiri Fourier infrared spectrometer (onye na-emepụta ngwa Thermalfisher, ụdị iS50) na mercury probe concentration tester (onye na-emepụta ngwa Semilab, ụdị 530L) kọwaa nkezi na nkesa nke ọkpụrụkpụ oyi akwa epitaxial na ntinye doping; e kpebiri ọkpụrụkpụ na ntinye doping nke isi ihe ọ bụla dị na oyi akwa epitaxial site n'iwepụ isi ihe n'akụkụ ahịrị dayameta nke na-ejikọta ahịrị nkịtị nke nsọtụ isi na 45° na etiti wafer ahụ na mwepụ nsọtụ 5 mm. Maka wafer 150 mm, e were isi ihe 9 n'otu ahịrị dayameta (dayameta abụọ dị n'otu), na maka wafer 200 mm, e were isi ihe 21, dịka egosiri na Foto 2. E jiri microscope ike atọm (onye na-emepụta ngwa Bruker, ihe nlereanya Dimension Icon) họrọ mpaghara 30 μm×30 μm na mpaghara etiti na mpaghara nsọ (iwepụ nsọtụ 5 mm) nke wafer epitaxial iji nwalee iru uju elu nke oyi akwa epitaxial; E ji ihe nnwale ntụpọ elu (onye nrụpụta akụrụngwa China Electronics) tụọ ntụpọ nke oyi akwa epitaxial. Ihe onyonyo 3D ahụ bụ ihe mmetụta radar (ihe nlereanya Mars 4410 pro) sitere na Kefenghua.
Oge ozi: Sep-04-2024