Waqtigan xaadirka ah, warshadaha SiC waxay isu beddelayaan 150 mm (6 inji) ilaa 200 mm (8 inji). Si loo daboolo baahida degdegga ah ee loo qabo wafers-ka SiC homoepitaxial ee cabbirka weyn, tayada sare leh ee warshadaha, 150mm iyo 200mm.Waferada homoepitaxial ee 4H-SiCsi guul leh ayaa loogu diyaariyey substrate-yada gudaha iyadoo la adeegsanayo qalabka koritaanka epitaxial-ka ee 200mm SiC ee si madax-bannaan loo sameeyay. Geedi socod homoepitaxial ah oo ku habboon 150mm iyo 200mm ayaa la sameeyay, kaas oo heerka koritaanka epitaxial uu ka badnaan karo 60um/saacaddii. Iyadoo la buuxinayo epitaxial-ka xawaaraha sare leh, tayada wafer-ka epitaxial waa mid aad u fiican. Midnimada dhumucda 150 mm iyo 200 mmWaferada epitaxial-ka ee SiCwaxaa lagu xakameyn karaa 1.5% gudahood, isku-darka isku-darka ayaa ka yar 3%, cufnaanta cilladaha dilaaga ah waxay ka yar tahay 0.3 walxood/cm2, iyo celceliska xididka qallafsanaanta dusha sare ee epitaxial Ra waa ka yar yahay 0.15nm, dhammaan tilmaamayaasha habka asaasiga ahna waxay ku jiraan heerka sare ee warshadaha.
Silikoon Karbohaydrayt (SiC)waa mid ka mid ah wakiilada agabka semiconductor-ka jiilka saddexaad. Waxay leedahay astaamaha xoogga goobta burburka sare, hufnaanta kulaylka aadka u fiican, xawaaraha qulqulka elektaroonigga ee weyn, iyo iska caabbinta shucaaca oo xooggan. Waxay si weyn u ballaarisay awoodda farsamaynta tamarta ee aaladaha korontada waxayna dabooli kartaa shuruudaha adeegga ee jiilka soo socda ee qalabka elektaroonigga korontada ee aaladaha leh awood sare, cabbir yar, heerkul sare, shucaac sare iyo xaalado kale oo daran. Waxay yareyn kartaa booska, yareyn kartaa isticmaalka korontada waxayna yareyn kartaa shuruudaha qaboojinta. Waxay keentay isbeddello kacaan ah oo ku yimid gawaarida tamarta cusub, gaadiidka tareenka, shabakadaha caqliga badan iyo goobaha kale. Sidaa darteed, semiconductor-yada silicon carbide ayaa loo aqoonsaday inay yihiin agabka ugu habboon ee hoggaamin doona jiilka soo socda ee aaladaha elektaroonigga ah ee awoodda sare leh. Sannadihii la soo dhaafay, iyada oo ay ugu wacan tahay taageerada siyaasadda qaranka ee horumarinta warshadaha semiconductor-ka jiilka saddexaad, cilmi-baarista iyo horumarinta iyo dhismaha nidaamka warshadaha qalabka SiC ee 150 mm ayaa asal ahaan lagu dhammaystiray Shiinaha, amniga silsiladda warshadahana waxaa la damaanad qaaday. Sidaa darteed, diiradda warshadaha ayaa si tartiib tartiib ah ugu wareegtay xakamaynta kharashka iyo horumarinta hufnaanta. Sida ku cad Shaxda 1, marka la barbar dhigo 150 mm, 200 mm SiC waxay leedahay heer isticmaal gees sare leh, wax soo saarka jajabyada wafer-ka ah waxaa lagu kordhin karaa qiyaastii 1.8 jeer. Ka dib marka tiknoolajiyadu bislaato, kharashka wax soo saarka ee jajabka hal-ka ah waxaa lagu dhimi karaa 30%. Horumarka tignoolajiyada ee 200 mm waa hab toos ah oo lagu "yareeyo kharashyada iyo kordhinta hufnaanta", waana furaha warshadaha semiconductor-ka ee dalkayga si ay "u socdaan barbar socda" ama xitaa "lead".
Ka duwan habka qalabka Si,Qalabka korontada ee SiC semiconductorDhammaantood waa la farsameeyaa oo waxaa lagu diyaariyaa lakabyo epitaxial ah oo ah saldhigga. Wafer-yada Epitaxial waa agab aasaasi ah oo muhiim u ah aaladaha korontada SiC. Tayada lakabka epitaxial si toos ah ayay u go'aamisaa wax soo saarka qalabka, kharashkiisuna wuxuu ka dhigan yahay 20% kharashka wax soo saarka chip-ka. Sidaa darteed, koritaanka epitaxial waa isku xidhka dhexe ee lagama maarmaanka u ah aaladaha korontada SiC. Xadka sare ee heerka habka epitaxial waxaa go'aamiya qalabka epitaxial. Waqtigan xaadirka ah, heerka deegaan ee qalabka epitaxial 150mm SiC ee Shiinaha waa mid aad u sarreeya, laakiin qaab-dhismeedka guud ee 200mm wuxuu ka dambeeyaa heerka caalamiga ah isla waqtigaas. Sidaa darteed, si loo xalliyo baahiyaha degdegga ah iyo dhibaatooyinka ciriiriga ah ee wax soo saarka walxaha epitaxial ee cabbirka weyn, tayada sare leh ee horumarinta warshadaha semiconductor-ka ee jiilka saddexaad ee gudaha, warqaddani waxay soo bandhigaysaa qalabka epitaxial 200 mm SiC oo si guul leh loogu sameeyay dalkayga, waxayna barataa habka epitaxial. Iyadoo la hagaajinayo xuduudaha habka sida heerkulka habka, heerka socodka gaaska side, saamiga C/Si, iwm., isku-darka fiirsashada <3%, dhumucda aan isku-midka ahayn <1.5%, qallafsanaanta Ra <0.2 nm iyo cufnaanta cilladaha dilaaga ah <0.3 xabo/cm2 oo ah 150 mm iyo 200 mm SiC wafers epitaxial ah oo leh foorno epitaxial silicon carbide ah oo si madax-bannaan loo sameeyay 200 mm. Heerka habka qalabka ayaa dabooli kara baahiyaha diyaarinta qalabka awoodda SiC ee tayada sare leh.
1 Tijaabo
1.1 Mabda'aXididdada hoose ee SiChabka
Habka koritaanka homoepitaxial ee 4H-SiC wuxuu inta badan ka kooban yahay 2 tallaabo oo muhiim ah, kuwaas oo kala ah, qallajinta heerkulka sare ee gudaha ee substrate-ka 4H-SiC iyo habka dhigista uumiga kiimikada ee isku midka ah. Ujeedada ugu weyn ee qallajinta substrate-ka gudaha waa in laga saaro burburka dusha sare ee substrate-ka ka dib marka la nadiifiyo wafer-ka, dareeraha dhalaalinta haraaga ah, walxaha iyo lakabka oksaydhka, qaab-dhismeedka tallaabada atomiga ee caadiga ah waxaa lagu samayn karaa dusha sare ee substrate-ka iyadoo la qallajinayo. Qallajinta gudaha waxaa badanaa lagu sameeyaa jawi haydarojiin ah. Sida waafaqsan shuruudaha habka dhabta ah, waxaa sidoo kale lagu dari karaa xaddi yar oo gaas ah oo kaabayaal ah, sida haydarojiin chloride, propane, ethylene ama silane. Heerkulka qallajinta hydrogen-ka gudaha ee gudaha wuxuu guud ahaan ka sarreeyaa 1 600 ℃, cadaadiska qolka falgalka guud ahaan waxaa lagu xakameeyaa ka hooseeya 2 × 104 Pa inta lagu jiro habka qallajinta.
Ka dib marka dusha sare ee substrate-ka lagu hawlgeliyo etching-ka gudaha, waxay gashaa habka kaydinta uumiga kiimikada heerkulka sare leh, taas oo ah, isha koritaanka (sida ethylene/propane, TCS/silane), isha doping-ka (nooca n-nooca doping-ka ee nitrogen, nooca p-nooca doping-ka ee TMMal), iyo gaaska caawiya sida hydrogen chloride waxaa loo qaadaa qolka falcelinta iyada oo loo marayo qulqul weyn oo gaas side ah (badanaa hydrogen). Ka dib marka gaasku ka falceliyo qolka falcelinta heerkulka sare, qayb ka mid ah horudhaca ayaa si kiimiko ah uga falcesha oo ku nuugta dusha sare ee wafer-ka, iyo lakab epitaxial ah oo hal-kristal ah oo isku mid ah oo 4H-SiC ah oo leh ururin doping gaar ah, dhumuc gaar ah, iyo tayo sare leh ayaa laga sameeyaa dusha sare ee substrate-ka iyadoo la isticmaalayo substrate-ka hal-kristal ah ee 4H-SiC oo ah qaab-dhismeed. Ka dib sannado badan oo sahaminta farsamada ah, tignoolajiyada homoepitaxial ee 4H-SiC asal ahaan way bislaatay waxaana si weyn loogu isticmaalaa wax soo saarka warshadaha. Tignoolajiyada homoepitaxial ee 4H-SiC ee ugu isticmaalka badan adduunka waxay leedahay laba astaamood oo caadi ah:
(1) Iyada oo la adeegsanayo substrate goyn ah oo aan lahayn dhidib (marka loo eego diyaaradda kiristaalka <0001>, oo u jeedda jihada kiristaalka <11-20>) oo ah qaab-dhismeed, lakab epitaxial ah oo saafi ah oo hal-kiristaal ah oo aan lahayn wasakh ayaa lagu shubaa substrate-ka qaab-dhismeedka koritaanka socodka-socodka. Horraantii koritaanka homoepitaxial ee 4H-SiC wuxuu isticmaalay substrate kiristaal oo togan, taas oo ah, diyaaradda <0001> Si ee koritaanka. Cufnaanta tallaabooyinka atomiga ee dusha sare ee substrate kiristaalka togan waa mid hooseeya balakoonna waa ballaaran yihiin. Kobaca nucleation-ka laba-geesoodka ah way fududahay in la sameeyo inta lagu jiro habka epitaxy si loo sameeyo 3C crystal SiC (3C-SiC). Iyada oo la jarayo dhidibka, tallaabooyinka atomka ee cufnaanta sare leh, oo cidhiidhi ah ayaa lagu soo bandhigi karaa dusha sare ee substrate-ka 4H-SiC <0001>, horudhaca nuugana wuxuu si wax ku ool ah u gaari karaa booska tallaabada atomiga iyadoo leh tamar dusha sare oo hooseeya iyada oo loo marayo faafinta dusha sare. Tallaabada, booska isku xidhka kooxda atom/molecular-ka ee horudhaca ah waa mid gaar ah, sidaa darteed qaabka koritaanka socodka tallaabada, lakabka epitaxial wuxuu si fiican u dhaxli karaa taxanaha labajibbaaran ee lakabka atomiga Si-C ee substrate-ka si uu u sameeyo hal kiristaalo oo leh isla wejiga kiristaalka ee substrate-ka.
(2) Kobaca epitaxial-ka xawaaraha sare leh waxaa lagu gaaraa soo bandhigida isha silicon-ka oo ay ku jirto chlorine. Nidaamyada kaydinta uumiga kiimikada ee SiC ee caadiga ah, silane iyo propane (ama ethylene) ayaa ah ilaha koritaanka ugu muhiimsan. Inta lagu jiro kordhinta heerka koritaanka iyadoo la kordhinayo heerka socodka isha koritaanka, maadaama cadaadiska qayb ahaan ee dheellitirka qaybta silicon uu sii kordhayo, way fududahay in la sameeyo kooxo silicon ah iyadoo la adeegsanayo nucleation-ka wejiga gaaska ee isku midka ah, kaas oo si weyn u yareeya heerka isticmaalka isha silicon. Samaynta kooxo silicon ah ayaa si weyn u xaddidaya hagaajinta heerka koritaanka epitaxial. Isla mar ahaantaana, kooxo silicon ah ayaa carqaladeyn kara kobaca socodka tallaabada waxayna sababi karaan nucleation cilladaysan. Si looga fogaado nucleation-ka wejiga gaaska ee isku midka ah iyo in la kordhiyo heerka koritaanka epitaxial, soo bandhigida ilaha silicon-ka ku salaysan chlorine hadda waa habka ugu weyn ee lagu kordhinayo heerka koritaanka epitaxial ee 4H-SiC.
Qalabka epitaxial-ka SiC 1.2 200 mm (8-inji) iyo xaaladaha habka
Tijaabooyinka lagu sharraxay warqaddan waxaa dhammaantood lagu sameeyay qalab epitaxial ah oo siman oo 150/200 mm (6/8 inji) ah oo ku habboon derbiga kulul ee SiC oo si madax-bannaan loo sameeyay oo ay si madax-bannaan u samaysay Machadka 48-aad ee Tiknoolajiyada Elektroonigga ah ee Shiinaha. Foornada epitaxial waxay taageertaa rarista iyo dejinta wafer-ka si buuxda otomaatig ah. Jaantuska 1 waa jaantus sawireed oo ku saabsan qaab-dhismeedka gudaha ee qolka falcelinta ee qalabka epitaxial. Sida lagu muujiyey Jaantuska 1, derbiga dibadda ee qolka falcelinta waa gambaleel quartz ah oo leh lakab biyo qaboojiye ah, gudaha gambaleelkuna waa qol falgal heerkul sare leh, kaas oo ka kooban dareemaha kaarboonka ee dahaarka kulaylka, godka garaafiga gaarka ah ee saafiga ah, saldhigga gaaska graphite ee wareegaya, iwm. Gambaleelka quartz oo dhan waxaa lagu daboolay gariirad soo-saarid dhululubo ah, qolka falcelinta ee gudaha gambaleelkana waxaa si elektromagnetic ah ugu kululeeya sahay koronto soo-saarid oo soo noqnoqota oo dhexdhexaad ah. Sida ku cad Jaantuska 1 (b), gaaska side-ka, gaaska falgalka, iyo gaaska doping-ka dhammaantood waxay ku socdaan dusha sare ee wafer-ka iyagoo ku socda qulqulka laminar-ka toosan laga bilaabo qulqulka sare ee qolka falgalka ilaa hoos-u-dhaca qolka falgalka waxaana laga saaraa dhammaadka gaaska dabada. Si loo hubiyo isku-dhafka gudaha wafer-ka, wafer-ka ay qaado saldhigga hawada sabbaynaya ayaa had iyo jeer la wareegaa inta lagu jiro hawsha.
Substrate-ka loo isticmaalay tijaabada waa 150 mm, 200 mm (6 inji, 8 inji) <1120> jiho 4° oo ka baxsan xagasha gudbisa n-nooca 4H-SiC substrate SiC oo laba-dhinac leh oo ay soo saartay Shanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) iyo ethylene (C2H4) ayaa loo isticmaalaa ilaha koritaanka ugu muhiimsan ee tijaabada habka, kuwaas oo ay ka mid yihiin TCS iyo C2H4 oo loo isticmaalo ilo silikoon ah iyo ilo kaarboon siday u kala horreeyaan, nitrogen saafi ah oo sarreeya (N2) ayaa loo isticmaalaa sidii ilo doping nooca n ah, iyo hydrogen (H2) waxaa loo isticmaalaa sidii gaas milmi iyo gaas side. Heerkulka habka epitaxial waa 1 600 ~ 1 660 ℃, cadaadiska habka waa 8×103 ~ 12×103 Pa, heerka socodka gaaska side H2 waa 100~140 L/daqiiqo.
1.3 Tijaabinta iyo qeexidda wafer-ka epitaxial
Qalabka cabbira heerkulka Fourier infrared (soo saaraha qalabka Thermalfisher, model iS50) iyo tijaabiyaha fiirsashada baaritaanka meerkuriga (soo saaraha qalabka Semilab, model 530L) ayaa loo isticmaalay in lagu qeexo celceliska iyo qaybinta dhumucda lakabka epitaxial iyo fiirsashada daawada; dhumucda iyo fiirsashada daawada ee dhibic kasta oo ku jirta lakabka epitaxial waxaa lagu go'aamiyay iyadoo la qaadayo dhibco ku teedsan xariiqda dhexroorka ee isgoysyada xariiqda caadiga ah ee geeska tixraaca ugu weyn 45° bartamaha waferka iyadoo laga saarayo gees 5 mm ah. Wafer 150 mm ah, 9 dhibcood ayaa lagu qaaday xariiq hal dhexroor ah (laba dhexroor ayaa isku toosanaa), wafer 200 mm ah, 21 dhibcood ayaa la qaaday, sida ku cad Jaantuska 2. Microscope xoogga atomiga ah (soo saaraha qalabka Bruker, model Dimension Icon) ayaa loo isticmaalay in lagu doorto meelo 30 μm×30 μm ah oo ku yaal aagga dhexe iyo aagga geeska (ka saarista geeska 5 mm) ee waferka epitaxial si loo tijaabiyo qallafsanaanta dusha sare ee lakabka epitaxial; Cilladaha lakabka epitaxial waxaa lagu cabiray iyadoo la adeegsanayo tijaabiye cillad dusha sare ah (soo saaraha qalabka Shiinaha Electronics Sawir qaadaha 3D waxaa lagu gartaa dareemaha radar (nooca Mars 4410 pro) oo ka yimid Kefenghua.
Waqtiga boostada: Sebteembar-04-2024