Parizvino, indasitiri yeSiC iri kuchinja kubva pa150 mm (6 inches) kusvika pa200 mm (8 inches). Kuti tikwanise kuzadzisa kudiwa kukuru kwemawafer makuru eSiC homoepitaxial muindasitiri, 150mm ne200mm.Mawafer e4H-SiC homoepitaxialZvakagadzirwa zvakanaka pamidziyo yepamba uchishandisa michina yekukura ye200mm SiC epitaxial yakagadzirwa yakazvimiririra. Maitiro ekukura kwe150mm ne200mm akagadzirwa, umo mwero wekukura kweepitaxial unogona kupfuura 60um/awa. Kunyangwe ichisangana ne epitaxy inokasira, mhando ye epitaxial wafer yakanaka kwazvo. Kukora kwayo kwakafanana kwe150 mm ne200 mm.Mawafer eSiC epitaxialinogona kudzorwa mukati me1.5%, kufanana kwehuwandu hwezvinhu kuri pasi pe3%, huwandu hwedenda rinouraya huri pasi pe0.3 particles/cm2, uye epitaxial surface roughness root mean square Ra iri pasi pe0.15nm, uye zviratidzo zvese zvepakati zvemaitiro zviri padanho repamusoro reindasitiri.
Silicon Carbide (SiC)ndeimwe yemimwe yemidziyo yesemiconductor yechizvarwa chechitatu. Ine hunhu hwekusimba kwemunda kwakapwanyika zvakanyanya, kufambisa kwakanaka kwekupisa, kumhanya kukuru kwekuyerera kwemaerekitironi, uye kuramba kwakasimba kwemwaranzi. Yakawedzera zvakanyanya kugona kwekugadzirisa simba kwemidziyo yemagetsi uye inogona kusangana nezvinodiwa zvevashandi vechizvarwa chinotevera chemidziyo yemagetsi yemagetsi yemidziyo ine simba guru, saizi diki, tembiricha yepamusoro, mwaranzi yakakwira nezvimwe zvinhu zvakanyanya. Inogona kuderedza nzvimbo, kuderedza kushandiswa kwesimba uye kuderedza zvinodiwa zvekutonhodza. Yakaunza shanduko huru kumotokari itsva dzesimba, kutakurwa kwechitima, magridi akangwara nedzimwe nzvimbo. Naizvozvo, silicon carbide semiconductors dzave kuzivikanwa sezvinhu zvakanaka zvichatungamira chizvarwa chinotevera chemidziyo yemagetsi yemagetsi ine simba guru. Mumakore achangopfuura, nekuda kwerutsigiro rwenyika rwekusimudzira indasitiri yesemiconductor yechizvarwa chechitatu, kutsvagisa nekuvandudza nekuvaka sisitimu yeindasitiri ye150 mm SiC kwave kupedzwa muChina, uye kuchengetedzeka kwecheni yemaindasitiri kwave kuvimbiswa. Naizvozvo, chinangwa cheindasitiri chakachinja zvishoma nezvishoma kuenda pakudzora mitengo nekuvandudza mashandiro. Sezvakaratidzwa muTafura 1, zvichienzaniswa ne150 mm, 200 mm SiC ine mwero wekushandiswa kwepamusoro, uye kubuda kwemachipisi ewafer imwe chete kunogona kuwedzerwa kanenge ka1.8. Mushure mekunge tekinoroji yakura, mutengo wekugadzira chip imwe chete unogona kuderedzwa ne30%. Kubudirira kwetekinoroji kwe200 mm inzira yakananga "yekuderedza mitengo nekuwedzera kushanda", uye zvakare ndiyo kiyi yekuti indasitiri yesemiconductor yenyika yangu "ishande pamwe chete" kana kutoti "itungamirire".
Kusiyana nemaitiro eSi device,Zvishandiso zvemagetsi zveSiC semiconductorZvese zvinogadziriswa uye zvinogadzirwa ne epitaxial layers sedombo guru. Epitaxial wafers zvinhu zvakakosha zveSiC power devices. Hunhu hwe epitaxial layer hunotarisa zvakananga goho remuchina, uye mutengo wawo unosvika 20% yemutengo wekugadzira chips. Nokudaro, kukura kwe epitaxial chinhu chakakosha pakati pemidziyo yeSiC power. Muganho wepamusoro we epitaxial process level unotsanangurwa nemidziyo ye epitaxial. Parizvino, mwero wenzvimbo ye150mm SiC epitaxial equipment muChina wakakwira zvakanyanya, asi marongerwo ese e200mm ari kumashure kwedanho repasi rose panguva imwe chete. Naizvozvo, kuitira kugadzirisa zvinodiwa nekukurumidza nematambudziko ekugadzira zvinhu zvikuru, zvepamusoro-soro zve epitaxial zvekusimudzira indasitiri yemukati yechizvarwa chechitatu che semiconductor, bepa iri rinozivisa michina ye 200 mm SiC epitaxial yakagadzirwa zvakanaka munyika yangu, uye rinoongorora maitiro e epitaxial. Nekugadzirisa ma process parameters akadai se process tembiricha, carrier gas flow rate, C/Si ratio, nezvimwewo, concentration uniformity <3%, thickness non-uniformity <1.5%, roughness Ra <0.2 nm uye defect defect density <0.3 grains/cm2 ye 150 mm uye 200 mm SiC epitaxial wafers dzine 200 mm silicon carbide epitaxial furnace yakagadzirwa yakazvimiririra inowanikwa. Nzira yekushanda kwemidziyo inogona kusangana nezvinodiwa zveSiC power device yemhando yepamusoro.
1 Kuedza
1.1 Nheyo yeSiC epitaxialmaitiro
Maitiro ekukura kwe4H-SiC homoepitaxial anosanganisira matanho maviri makuru, anoti, kuchekwa kwepasi pevhu re4H-SiC substrate nekupisa kwakanyanya uye maitiro ekuisa vapor yemakemikari akafanana. Chinangwa chikuru chekucheka pasi pevhu ndechekubvisa kukuvara kwepasi pevhu mushure mekupukuta kwewafer, mvura inosara yekupukuta, zvidimbu uye oxide layer, uye chimiro cheatomu chenguva dzose chinogona kugadzirwa pamusoro pevhu nekuchekwa. Kuchekwa mukati kunowanzoitwa mumhepo ine hydrogen. Zvichienderana nezvinodiwa chaizvo zvemaitiro, gasi diki rekubatsira rinogonawo kuwedzerwa, senge hydrogen chloride, propane, ethylene kana silane. Tembiricha yekucheka mukati mevhu rehydrogen inowanzo kuve pamusoro pe1600 ℃, uye kumanikidzwa kwekamuri rekuita kunowanzo dzorwa pasi pe2×104 Pa panguva yekucheka.
Mushure mekunge pamusoro pe substrate pashanda ne in-situ etching, inopinda mu high-temperature chemical vapor deposition process, kureva kuti, growth source (yakadai se ethylene/propane, TCS/silane), doping source (n-type doping source nitrogen, p-type doping source TAl), uye assistant gas senge hydrogen chloride zvinotakurwa kuenda ku reaction chamber kuburikidza ne carrier gas flow yakawanda (kazhinji hydrogen). Mushure mekunge gasi raita reaction mu high-temperature reaction chamber, chikamu che precursor chinoita chemically uye chinonamira pamusoro pe wafer, uye single-crystal homogeneous 4H-SiC epitaxial layer ine specific doping concentration, specific thickness, uye higher quality inoumbwa pamusoro pe substrate uchishandisa single-crystal 4H-SiC substrate se template. Mushure memakore ekutsvaga tekinoroji, 4H-SiC homoepitaxial technology yakakura uye inoshandiswa zvakanyanya mukugadzirwa kwemaindasitiri. 4H-SiC homoepitaxial technology inonyanya kushandiswa pasi rose ine maitiro maviri akajairika:
(1) Uchishandisa off-axis (zvichienderana ne <0001> crystal plane, kuenda ku <11-20> crystal direction) oblique cut substrate se template, high-purity single-crystal 4H-SiC epitaxial layer isina tsvina inoiswa pa substrate nenzira ye step-flow growth mode. Early 4H-SiC homoepitaxial growth yakashandisa positive crystal substrate, kureva, <0001> Si plane yekukura. Density yeatomic steps pamusoro pe positive crystal substrate yakaderera uye ma terraces akafara. Two-dimensional nucleation growth iri nyore kuitika panguva ye epitaxy process yekugadzira 3C crystal SiC (3C-SiC). Nekucheka off-axis, high-density, narrow terrace breadth atomic steps dzinogona kuiswa pamusoro pe 4H-SiC <0001> substrate, uye adsorbed precursor inogona kusvika zvinobudirira panzvimbo yeatomic step position nesimba repamusoro rakaderera kuburikidza nekupararira kwepamusoro. Padanho, nzvimbo yekubatanidza atomu/molecular group yakasiyana, saka mu step flow growth mode, epitaxial layer inogona kugara nhaka yakakwana yeSi-C double atomic layer stacking sequence ye substrate kuti igadzire kristaro imwe chete ine crystal phase yakafanana ne substrate.
(2) Kukura kwe epitaxial nekukurumidza kunowanikwa nekuunza sosi yesilicon ine chlorine. Mumaitiro ekare eSiC chemical vapor deposition systems, silane ne propane (kana ethylene) ndiwo masosi makuru ekukura. Mukuwedzera kwekukura kwekukura nekuwedzera mwero wekuyerera kwesosi yekukura, sezvo kumanikidzwa kwechikamu chesilicon kuri kuramba kuchiwedzera, zviri nyore kugadzira ma silicon clusters ne homogeneous gas phase nucleation, izvo zvinoderedza zvakanyanya mwero wekushandiswa kwesosi yesilicon. Kuumbwa kwe silicon clusters kunoderedza zvakanyanya kuvandudzwa kwe epitaxial growth rate. Panguva imwe chete, ma silicon clusters anogona kukanganisa kukura kwe step flow uye kukonzera defect nucleation. Kuti tidzivise homogeneous gas phase nucleation uye kuwedzera epitaxial growth rate, kuunzwa kwe chlorine-based silicon sources pari zvino ndiyo nzira huru yekuwedzera epitaxial growth rate ye4H-SiC.
Midziyo yeSiC epitaxial ine 1.2 200 mm (8-inch) uye mamiriro ekushanda kwayo
Kuedza kwakatsanangurwa mupepa rino kwakaitwa pamidziyo yeSiC epitaxial ine 150/200 mm (6/8-inch) yakagadzirwa nemonolithic hot wall SiC epitaxial yakagadzirwa yega ne48th Institute of China Electronics Technology Group Corporation. Furnace yeEpitaxial inotsigira kurodha nekuburitsa wafer otomatiki. Mufananidzo 1 idhayagiramu yechimiro chemukati mekamuri yereaction yemidziyo yeEpitaxial. Sezvakaratidzwa muMufananidzo 1, rusvingo rwekunze rwekamuri yereaction ibhero requartz rine interlayer inotonhorerwa nemvura, uye mukati mebhero mune kamuri yereaction inodziya zvakanyanya, inoumbwa nethermal insulation carbon felt, high-purity special graphite cavity, graphite gas-floating rotating base, nezvimwewo. Bhero rese requartz rakafukidzwa ne cylindrical induction coil, uye kamuri yereaction iri mukati mebhero rinopiswa ne electromagnetically ne medium-frequency induction power supply. Sezvakaratidzwa paMufananidzo 1 (b), gasi rinotakura, gasi rekuita, uye gasi rinoshandisa zvinodhaka zvinoyerera nepamusoro pewafer nenzira yakatambanudzwa kubva kumusoro kwekamuri rekuita kusvika pasi pekamuri rekuita uye zvinoburitswa kubva kumagumo egasi rekumashure. Kuti ive nechokwadi chekuti wafer iri mukati mewafer, wafer inotakurwa nechigadziko chinoyangarara chemhepo inogara ichitenderedzwa panguva yekuita.
Substrate yakashandiswa mukuyedza iyi imhando ye 150 mm, 200 mm (6 inches, 8 inches) <1120> direction 4°off-angle conductive n-type 4H-SiC double-sided polished SiC substrate yakagadzirwa neShanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) ne ethylene (C2H4) zvinoshandiswa senzvimbo huru dzekukura mukuyedza uku, pakati pazvo TCS neC2H4 zvinoshandiswa se silicon source uye carbon source zvichiteerana, high-purity nitrogen (N2) inoshandiswa se n-type doping source, uye hydrogen (H2) inoshandiswa se dilution gas uye carrier gas. Tembiricha ye epitaxial process iyi 1600 ~1660 ℃, process pressure iri 8×103 ~12×103 Pa, uye H2 carrier gas flow rate iri 100～140 L/min.
1.3 Kuyedzwa kweEpitaxial wafer uye hunhu hwayo
Fourier infrared spectrometer (mugadziri wemidziyo Thermalfisher, model iS50) uye mercury probe concentration tester (mugadziri wemidziyo Semilab, model 530L) zvakashandiswa kuratidza avhareji uye kupararira kweukobvu hwe epitaxial layer uye doping concentration; ukobvu uye doping concentration yepoindi yega yega mu epitaxial layer zvakatsanangurwa nekutora mapoindi ari pamutsetse wedhayamita achibatanidza mutsetse wakajairika we main reference edge pa 45° pakati pe wafer nekubvisa 5 mm edge. Kune wafer ye 150 mm, mapoindi mapfumbamwe akatorwa nemutsetse wedhayamita imwe chete (madhayamita maviri akanga akatarisana), uye kune wafer ye 200 mm, mapoindi makumi maviri nerimwe akatorwa, sezvakaratidzwa muMufananidzo 2. Microscope yeatomic force (mugadziri wemidziyo Bruker, model Dimension Icon) yakashandiswa kusarudza nzvimbo dze 30 μm×30 μm munzvimbo yepakati nenzvimbo yemucheto (kubvisa 5 mm edge) ye epitaxial wafer kuyedza kuomarara kwepamusoro pe epitaxial layer; Kukanganisika kwe epitaxial layer kwakayerwa uchishandisa chinhu chinoongorora defect surface (mugadziri wemidziyo China Electronics). Iyo 3D imager yakaratidzwa ne radar sensor (modhi Mars 4410 pro) kubva kuKefenghua.
Nguva yekutumira: Gunyana-04-2024