Kugeza ubu, inganda za SiC zirahinduka kuva kuri mm 150 (santimetero 6) kugera kuri mm 200 (santimetero 8). Kugirango uhuze ibyifuzo byihutirwa binini binini, bifite ubuziranenge bwa SiC homoepitaxial wafers mu nganda, 150mm na 200mm4H-SiC wafers ya homoepitaxialbyateguwe neza kubutaka bwimbere hifashishijwe ibikoresho byiterambere byigenga 200mm SiC. Homoepitaxial inzira ikwiranye na 150mm na 200mm yatejwe imbere, aho umuvuduko wubwiyongere bwa epitaxial ushobora kurenza 60um / h. Mugihe uhuye na epitaxy yihuta cyane, ubwiza bwa epitaxial wafer nibyiza. Ubunini bwuburinganire bwa mm 150 na 200 mmSiC epitaxial wafersirashobora kugenzurwa muri 1.5%, uburinganire bwibanze ntiburi munsi ya 3%, ubucucike bwinenge bwica buri munsi ya 0.3 ibice / cm2, naho epitaxial surface roughness root root bivuze kwaduka Ra iri munsi ya 0.15nm, kandi ibipimo ngenderwaho byose biri murwego rwo hejuru rwinganda.
Silicon Carbide (SiC)ni umwe mu bahagarariye ibikoresho bya semiconductor ya gatatu. Ifite ibiranga imbaraga zo kumeneka cyane, imbaraga nziza zumuriro, umuvuduko mwinshi wa electron, umuvuduko mwinshi, hamwe no kurwanya imirasire ikomeye. Yaguye cyane ubushobozi bwo gutunganya ingufu zibikoresho byamashanyarazi kandi irashobora kuzuza ibisabwa bya serivise yigihe kizaza cyibikoresho bya elegitoroniki byamashanyarazi kubikoresho bifite ingufu nyinshi, ubunini buto, ubushyuhe bwinshi, imirasire myinshi nibindi bihe bikabije. Irashobora kugabanya umwanya, kugabanya gukoresha ingufu no kugabanya ubukonje bukenewe. Yazanye impinduka zimpinduramatwara mumodoka nshya yingufu, ubwikorezi bwa gari ya moshi, gride yubwenge nizindi nzego. Kubwibyo, silicon karbide semiconductor yamenyekanye nkibikoresho byiza bizayobora igisekuru kizaza cyibikoresho bya elegitoroniki bifite ingufu nyinshi. Mu myaka yashize, tubikesheje inkunga ya politiki y’igihugu yo guteza imbere inganda zikoresha igice cya gatatu cy’amashanyarazi, ubushakashatsi n’iterambere ndetse n’iyubakwa rya sisitemu y’inganda zikoreshwa mu bikoresho bya mm 150 bya SiC byarangiye ahanini mu Bushinwa, kandi umutekano w’urwego rw’inganda uremezwa ahanini. Kubwibyo, intumbero yinganda yagiye ihinduka buhoro buhoro kugenzura ibiciro no kuzamura imikorere. Nkuko bigaragara mu mbonerahamwe ya 1, ugereranije na mm 150, mm 200 SiC ifite igipimo cyo hejuru cyo gukoresha, kandi umusaruro wa chip wa wafer imwe ushobora kwiyongera inshuro 1.8. Nyuma yikoranabuhanga rimaze gukura, igiciro cyo gukora chip imwe gishobora kugabanukaho 30%. Iterambere ry'ikoranabuhanga rya mm 200 ni uburyo butaziguye bwo "kugabanya ibiciro no kongera imikorere", kandi ni nurufunguzo rw'inganda zikoresha amashanyarazi mu gihugu cyanjye "gukora parallel" cyangwa se "kuyobora".
Bitandukanye nibikorwa bya Si ibikoresho,Amashanyarazi ya SiCbyose biratunganijwe kandi byateguwe hamwe na epitaxial layers nkibuye ryimfuruka. Epitaxial wafers nibikoresho byibanze kubikoresho byamashanyarazi ya SiC. Ubwiza bwa epitaxial layer bugena neza umusaruro wigikoresho, kandi igiciro cyacyo kingana na 20% yikiguzi cyo gukora chip. Kubwibyo, gukura kwa epitaxial ningenzi ihuza hagati mubikoresho byamashanyarazi bya SiC. Urwego rwo hejuru rwibikorwa bya epitaxial rugenwa nibikoresho bya epitaxial. Kugeza ubu, impamyabumenyi y’ibikoresho bya epitaxial ya 150mm ya SiC mu Bushinwa irasa naho iri hejuru, ariko imiterere rusange ya 200mm iri inyuma yurwego mpuzamahanga icyarimwe. Kubwibyo rero, kugirango dukemure ibibazo byihutirwa nibibazo byuburemere bwibikoresho binini binini, byujuje ubuziranenge epitaxial ibikoresho byo guteza imbere inganda zo mu bwoko bwa semiconductor zo mu gihugu cya gatatu, iyi mpapuro yerekana ibikoresho bya mm 200 bya SiC byateye imbere mu gihugu cyanjye, kandi byiga inzira ya epitaxial. Mugutezimbere ibipimo byubushyuhe nkubushyuhe bwibikorwa, umuvuduko wa gazi itwara, igipimo cya C / Si, nibindi, uburinganire bwibanze <3%, umubyimba udahuje <1.5%, ubukana Ra <0.2 nm nubucucike bwinenge bwica <0.3 ibinyampeke / cm2 bya mm 150 na 200 mm SiC epitaxial itanura hamwe na 200 mm ya silicon karbide epitaxial. Urwego rutunganya ibikoresho rushobora guhaza ibikenewe byogukora ibikoresho byiza bya SiC.
1 Ubushakashatsi
1.1 Ihame ryaSiC epitaxialinzira
Iterambere rya 4H-SiC homoepitaxial ririmo ahanini intambwe 2 zingenzi, arizo, ubushyuhe bwo hejuru-ahantu hamwe na 4H-SiC substrate hamwe nuburyo bwo guta imyuka ya chimique. Intego nyamukuru ya substrate in-situ etching ni ugukuraho kwangirika kwubutaka bwa substrate nyuma yo guswera wafer, ibisigazwa bisigara bisigara, ibice na oxyde, hamwe nuburyo busanzwe bwa intambwe ya atome burashobora gushingwa hejuru yubutaka. Mubisanzwe muburyo bukorerwa mukirere cya hydrogène. Ukurikije ibisabwa nyirizina, inzira ya gaze yingoboka nayo irashobora kongerwamo, nka hydrogène chloride, propane, Ethylene cyangwa silane. Ubushuhe bwa hydrogène iri muri-hejuru muri rusange hejuru ya 1 600 and, kandi umuvuduko wicyumba cya reaction usanga ugenzurwa munsi ya 2 × 104 Pa mugihe cyo gutera.
Ubuso bwa substrate bumaze gukoreshwa muburyo bwo gutobora, bwinjira muburyo bwo gutumura imyuka yubushyuhe bwo hejuru cyane, ni ukuvuga inkomoko yo gukura (nka Ethylene / propane, TCS / silane), isoko ya doping (n-ubwoko bwa doping source azote, p-doping source TMAl), hamwe na gaze ya hydrogène itwarwa na hydrogène chloride. Iyo gaze imaze gukora mubyumba byubushyuhe bwo hejuru, igice cyibibanziriza gikora imiti na adsorbs hejuru yubutaka bwa wafer, hamwe na kirisiti imwe ya kirisiti imwe ya 4H-SiC epitaxial igizwe na doping yihariye, ubunini bwihariye, hamwe nubuziranenge bwo hejuru ikorwa hejuru yubutaka hifashishijwe insimburangingo imwe ya 4H-SiC. Nyuma yimyaka yubushakashatsi bwa tekiniki, tekinoroji ya 4H-SiC homoepitaxial yarakuze cyane kandi ikoreshwa cyane mubikorwa byinganda. Ikoreshwa rya tekinoroji ya 4H-SiC homoepitaxial kwisi yose ifite ibintu bibiri biranga:
. Intangiriro ya 4H-SiC gukura kwa homoepitaxial yakoresheje substrate nziza ya kirisiti, ni ukuvuga indege ya <0001> Si yo gukura. Ubucucike bwintambwe za atome hejuru yubutaka bwiza bwa kristal substrate ni buke kandi amaterasi aragutse. Iterambere ryibice bibiri byoroshye kugaragara mugihe cya epitaxy yo gukora 3C kristal ya SiC (3C-SiC). Mugukata off-axis, hejuru-yubucucike, ubugari bwamaterasi yubutaka bwa atome intambwe irashobora gutangizwa hejuru yubutaka bwa 4H-SiC <0001>, kandi ibyamamajwe byamamaza birashobora kugera kumwanya wintambwe ya atome hamwe ningufu nkeya ugereranije no gukwirakwiza hejuru. Ku ntambwe, icyiciro kibanziriza atom / molekulari ihuza umwanya wihariye ntigisanzwe, kuburyo muburyo bwo gukura kwintambwe yo gukura, epitaxial layer irashobora kuragwa neza Si-C inshuro ebyiri za atomic layer ikurikirana ya substrate kugirango ikore kristu imwe hamwe nicyiciro kimwe cya kirisiti kimwe na substrate.
(2) Iterambere ryihuse epitaxial igerwaho mugutangiza isoko ya chlorine irimo chlorine. Mubisanzwe sisitemu yo kubika imyuka ya SiC, silane na propane (cyangwa Ethylene) nisoko nyamukuru yo gukura. Muburyo bwo kongera umuvuduko wubwiyongere mukongera umuvuduko winkomoko yiterambere, mugihe umuvuduko wa equilibrium igice cyigice cya silicon ukomeje kwiyongera, biroroshye gukora cluster ya silicon hamwe na gaze ya gazi ya homogeneous, igabanya cyane igipimo cyo gukoresha isoko ya silicon. Imiterere ya cluster ya silicon igabanya cyane iterambere ryikura rya epitaxial. Muri icyo gihe, cluster ya silicon irashobora guhungabanya imikurire yintambwe kandi igatera nucleation. Mu rwego rwo kwirinda nucleaire ya gaz ya homogeneous no kongera umuvuduko wubwiyongere bwa epitaxial, kwinjiza amasoko ya silicon ashingiye kuri chlorine kuri ubu nuburyo bwibanze bwo kongera umuvuduko wa epitaxial ya 4H-SiC.
1.2 200 mm (8-santimetero) ibikoresho bya epitaxial ya SiC nuburyo bwo gutunganya
Ubushakashatsi bwasobanuwe muri iyi nyandiko byose bwakorewe kuri mm 150/200 (6/8-santimetero) zihuza monolithic horizontal urukuta rushyushye ibikoresho bya epitaxial SiC ibikoresho byigenga byateguwe n'ikigo cya 48 cy'Ubushinwa Ikoranabuhanga rya Tekinoroji. Itanura rya epitaxial rishyigikira byimazeyo ya wafer yikuramo no gupakurura. Igishushanyo 1 nigishushanyo mbonera cyimiterere yimbere yimbere yicyumba cyibikorwa bya epitaxial. Nkuko bigaragara ku gishushanyo cya 1, urukuta rwinyuma rwicyumba cya reaction ni inzogera ya quartz ifite interineti ikonjesha amazi, kandi imbere yinzogera nicyumba cyo hejuru cyubushyuhe bwo hejuru, kikaba kigizwe na karubone yumuriro wa karubone, isuku idasanzwe ya grafite ya grafite, gazi ya gazi ireremba hejuru, hamwe ninzogera ya enterineti ikoresheje ingufu za enterineti. Nkuko bigaragara ku gishushanyo cya 1 (b), gazi itwara, gaze ya gaze, na gaze ya doping byose bitembera hejuru ya wafer mumigezi ya laminari itambitse iva hejuru yicyumba cya reaction igana hepfo yicyumba cya reaction hanyuma igasohoka kuva kumurizo wa gaze umurizo. Kugirango umenye neza muri wafer, wafer itwarwa nikirere kireremba ikirere gihora kizunguruka mugihe cyibikorwa.
Substrate ikoreshwa mubigeragezo ni ubucuruzi bwa mm 150, mm 200 (santimetero 6, santimetero 8) Trichlorosilane (SiHCl3, TCS) na Ethylene (C2H4) bikoreshwa nk'isoko nyamukuru yo gukura mu igeragezwa ryakozwe, muri byo TCS na C2H4 zikoreshwa nk'isoko ya silikoni n'isoko ya karubone, azote ifite isuku nyinshi (N2) ikoreshwa nk'isoko ya doping, na hydrogène (H2) ikoreshwa nka gaze ya gaze na gaze. Ubushyuhe buringaniye bwa epitaxial ni 1 600 ~ 1 660 ℃, umuvuduko wibikorwa ni 8 × 103 ~ 12 × 103 Pa, naho umuvuduko wa gazi ya H2 ni 100 ～ 140 L / min.
1.3 Kwipimisha Epitaxial wafer no kuranga
Fourier infrared spectrometer (uruganda rukora ibikoresho Thermalfisher, moderi iS50) hamwe na testi yibizamini bya mercure (uruganda rukora ibikoresho Semilab, moderi 530L) byakoreshejwe mu kwerekana uburyo bwo gukwirakwiza no gukwirakwiza umubyimba wa epitaxial hamwe na doping concentration; ubunini hamwe na doping yibanze kuri buri ngingo murwego rwa epitaxial byagenwe no gufata amanota kumurongo wa diameter uhuza umurongo usanzwe wuruhande rwibanze kuri 45 ° hagati ya wafer hamwe no gukuraho mm 5. Kuri wafer ya mm 150, hafashwe amanota 9 kumurongo umwe wa diameter (diametero ebyiri zari perpendicular kuri mugenzi we), naho kuri wafer ya mm 200, hafashwe amanota 21, nkuko bigaragara ku gishushanyo cya 2. inenge z'igice cya epitaxial zapimwe hifashishijwe ibipimo byo gupima ubuso (uruganda rukora ibikoresho Ubushinwa Electronics Imashusho ya 3D yaranzwe na sensor ya radar (moderi ya Mars 4410 pro) yo muri Kefenghua.
Igihe cyo kohereza: Nzeri-04-2024