Ubu, inganda za SiC ziri guhinduka kuva kuri mm 150 (inchi 6) kugera kuri mm 200 (inchi 8). Kugira ngo habeho ibyifuzo byihutirwa bya wafer nini kandi nziza za SiC homoepitaxial mu nganda, mm 150 na mm 200.Uduce twa 4H-SiC homoepitaxial wafersbyateguwe neza ku butaka bwo mu rugo hakoreshejwe ibikoresho byo gukuraho epitaxial bya 200mm SiC byakozwe ku giti cyabyo. Uburyo bwo gukuraho epitaxial bukwiriye 150mm na 200mm bwarakozwe, aho igipimo cyo gukuraho epitaxial gishobora kuba hejuru ya 60um/h. Mu gihe cyujuje epitaxy yihuta cyane, ubwiza bwa epitaxial wafer ni bwiza cyane. Ubunini bwa 150mm na 200mmUdupaki twa SiC epitaxialishobora kugenzurwa muri 1.5%, uburinganire bw'ibipimo buri munsi ya 3%, ubucucike bw'impinduka zica buri munsi ya 0.3 particles / cm2, naho imiterere y'ubuso bwa epitaxial roughness root mean Ra iri munsi ya 0.15nm, kandi ibimenyetso byose by'ingenzi by'imikorere biri ku rwego rwo hejuru rw'inganda.
Karubide ya Silicone (SiC)ni imwe mu zigize ibikoresho bya semiconductor byo mu gisekuru cya gatatu. Ifite imiterere yo kwangirika cyane kw'ubutaka, gutwara neza ubushyuhe, umuvuduko munini w'amashanyarazi, no kudahangana cyane n'imirasire. Yaguye cyane ubushobozi bwo gutunganya ingufu z'ibikoresho by'amashanyarazi kandi ishobora guhaza ibisabwa n'ibikoresho by'amashanyarazi byo mu gisekuru gitaha ku bikoresho bifite ingufu nyinshi, ingano nto, ubushyuhe bwinshi, imirasire myinshi n'ibindi bihe bikomeye. Ishobora kugabanya umwanya, kugabanya ikoreshwa ry'amashanyarazi no kugabanya ibisabwa mu gukonjesha. Yazanye impinduka zikomeye ku modoka nshya zikoresha ingufu, ubwikorezi bwa gari ya moshi, imiyoboro y'amashanyarazi n'ibindi bice. Kubwibyo, semiconductor za silicon carbide zamenyekanye nk'ibikoresho byiza bizayobora ibikoresho by'amashanyarazi byo mu gisekuru gitaha. Mu myaka ya vuba aha, bitewe n'inkunga ya politiki y'igihugu yo guteza imbere inganda za semiconductor zo mu gisekuru cya gatatu, ubushakashatsi n'iterambere n'ubwubatsi bwa sisitemu y'inganda za SiC ya 150 mm byarangiye mu Bushinwa, kandi umutekano w'uruhererekane rw'inganda waragaragajwe. Kubwibyo, intego y'inganda yagiye ihinduka buhoro buhoro igana ku kugenzura ikiguzi no kunoza imikorere. Nkuko bigaragara mu mbonerahamwe ya 1, ugereranije na mm 150, SiC ya mm 200 ifite igipimo cyo gukoresha cyane, kandi umusaruro wa single wafer chips ushobora kwiyongeraho inshuro zigera kuri 1.8. Nyuma y’uko ikoranabuhanga rimaze gukura, ikiguzi cyo gukora chips imwe gishobora kugabanukaho 30%. Iterambere ry’ikoranabuhanga rya mm 200 ni uburyo butaziguye bwo "kugabanya ikiguzi no kongera imikorere", kandi ni ingenzi ku nganda za semiconductor zo mu gihugu cyanjye "gukora kuri gahunda" cyangwa "kuyobora".
Bitandukanye n'uburyo ibikoresho bya Si bigenda,Ibikoresho by'amashanyarazi bya SiC semiconductorByose biratunganywa kandi bigategurwa hakoreshejwe epitaxial layers nk'ibuye ry'ifatizo. Epitaxial wafers ni ibikoresho by'ingenzi by'ibanze ku bikoresho by'amashanyarazi bya SiC. Ubwiza bw'urwego rwa epitaxial bugena neza umusaruro w'igikoresho, kandi ikiguzi cyacyo kigira 20% by'ikiguzi cyo gukora chips. Kubwibyo, gukura kwa epitaxial ni ihuriro ry'ingenzi mu bikoresho by'amashanyarazi bya SiC. Urwego rwo hejuru rw'urwego rwa epitaxial rugenwa n'ibikoresho bya epitaxial. Kuri ubu, urwego rw'aho ibikoresho bya epitaxial bya 150mm SiC epitaxial biherereye mu Bushinwa ruri hejuru cyane, ariko imiterere rusange ya 200mm iri inyuma y'urwego mpuzamahanga icyarimwe. Kubwibyo, kugira ngo bikemurwe ibibazo byihutirwa n'imbogamizi zo gukora ibikoresho binini kandi byiza bya epitaxial kugira ngo hatezwe imbere inganda za semiconductor zo mu gihugu cya gatatu, iyi nyandiko igaragaza ibikoresho bya epitaxial bya 200 mm SiC byatejwe imbere mu gihugu cyanjye, kandi ikiga ku buryo epitaxial ikorwa. Mu kunoza ibipimo by'imikorere nk'ubushyuhe bw'imikorere, igipimo cy'umuvuduko w'umwuka utwara imizigo, igipimo cya C/Si, nibindi, ingano y'ibipimo <3%, ubugari butari bumwe <1.5%, ubukana bwa Ra <0.2 nm n'ubucucike bw'ibice by'umubiri <0.3 ku gipimo cya cm2 cya mm 150 na mm 200 za SiC epitaxial wafers zifite itanura rya silicon carbide epitaxial ryakozwe ku giti cyaryo rya mm 200. Urwego rw'imikorere y'ibikoresho rushobora guhaza ibyifuzo by'ibikoresho by'amashanyarazi bya SiC byiza cyane.
Igerageza rya 1
1.1 Ihame ryaSiC epitaxialinzira
Uburyo bwo gukura kwa 4H-SiC homoepitaxial bugizwe ahanini n'intambwe ebyiri z'ingenzi, ari zo, gukata substrate ya 4H-SiC mu bushyuhe bwinshi no gushyiramo umwuka wa chemical uhuye. Intego nyamukuru yo gukata substrate mu bushyuhe ni ugukuraho ibyangiritse ku buso bw'ubutaka nyuma yo gukata wafer, gukata ibisigazwa by'amazi, uduce duto n'urwego rwa oxide, kandi imiterere isanzwe ya atome ishobora gukorwa ku buso bw'ubutaka hakoreshejwe gukata. Gukata in-situ bikunze gukorwa mu kirere cya hydrogen. Dukurikije ibisabwa mu buryo nyabwo, hashobora no kongerwamo gaze nke y'inyongera, nka hydrogen chloride, propane, ethylene cyangwa silane. Ubushyuhe bwa hydrogene mu busanzwe buri hejuru ya 1600 ℃, kandi igitutu cy'icyumba cy'imyitozo muri rusange kigenzurwa munsi ya 2×104 Pa mu gihe cyo gukata.
Nyuma y'uko ubuso bw'ubutaka butangiye gukoreshwa hakoreshejwe uburyo bwo gushushanya ahantu hasanzwe, bwinjira mu buryo bwo gushyira umwuka mu kirere ushyushye cyane, ni ukuvuga isoko y'ikura (nka ethylene/propane, TCS/silane), isoko ya doping (ni ukuvuga azote ya doping yo mu bwoko bwa n, isoko ya doping yo mu bwoko bwa p TAl), na gaze y'inyongera nka hydrogen chloride bijyanwa mu cyumba cy'ivugurura binyuze mu muyoboro munini wa gaze (ubusanzwe hidrojeni). Iyo gaze imaze gukora mu cyumba cy'ivugurura mu bushyuhe bwinshi, igice cy'ivugurura gikora nk'imiti kandi kigafata ku buso bwa wafer, hanyuma urwego rumwe rw'ikirahure rwa 4H-SiC epitaxial rufite urugero runaka rwa doping, ubunini bwihariye, n'ubwiza bwo hejuru rukorwa ku buso bw'ubutaka hakoreshejwe substrate ya 4H-SiC imwe nk'icyitegererezo. Nyuma y'imyaka myinshi y'ubushakashatsi bwa tekiniki, ikoranabuhanga rya 4H-SiC homoepitaxial ryakuze cyane kandi rikoreshwa cyane mu nganda. Ikoranabuhanga rya 4H-SiC homoepitaxial rikoreshwa cyane ku isi rifite imiterere ibiri isanzwe:
(1) Hakoreshejwe umurongo utari ku ruhande (ugereranije n’umurongo wa kristu wa <0001>, werekeza ku cyerekezo cya kristu cya <11-20>) nk'icyitegererezo, urwego rw'ikirahure kimwe cya 4H-SiC epitaxial rudafite umwanda rushyirwa kuri uwo murongo mu buryo bw'uburyo bwo gukura kw'intambwe. Iterambere rya 4H-SiC homoepitaxial ryakoresheje umurongo wa kristu wa <0001> kugira ngo rikure. Ubucucike bw'intambwe za atome ku buso bwa kristu wa kristu ni buke kandi amaterasi ni manini. Iterambere rya nucleation y'ibice bibiri biroroshye kubaho mu gihe cya epitaxy kugira ngo habeho kristu ya kristu ya 3C (3C-SiC). Mu guca kristu wa off-axis, intambwe za atome z'ubugari bunini kandi buto zishobora gushyirwa ku buso bwa kristu ya 4H-SiC <0001>, kandi igikoresho cya ascorbed gishobora kugera ku mwanya wa atome w'intambwe hamwe n'ingufu nke z'ubuso binyuze mu gukwirakwira kw'ubuso. Ku ntambwe, aho atome/amatsinda y’itsinda ry’ingirabuzimafatizo ahurira ni umwihariko, bityo mu buryo bwo gukura kw’imigendere y’intambwe, urwego rwa epitaxial rushobora kwakira neza urukurikirane rw’ingazi ebyiri za atome za Si-C z’urutonde rw’ingirabuzimafatizo kugira ngo rukore kristu imwe ifite kristu imwe n’urutonde rw’ingirabuzimafatizo.
(2) Iterambere ryihuse rya epitaxial rigerwaho hakoreshejwe isoko ya silikoni irimo chlorine. Mu buryo busanzwe bwo kubika umwuka wa SiC, silane na propane (cyangwa ethylene) ni byo soko nyamukuru ry’iterambere. Mu rwego rwo kongera umuvuduko w’iterambere binyuze mu kongera umuvuduko w’iterambere ry’isoko ry’iterambere, uko igitutu cy’igice cya silikoni gikomeza kwiyongera, biroroshye gukora amatsinda ya silikoni hakoreshejwe nucleation y’iterambere ry’iterambere ry’iterambere ry’iterambere ry’iterambere ry’iterambere, ibyo bigabanya cyane umuvuduko w’iterambere ry’iterambere ry’iterambere. Muri icyo gihe, amatsinda ya silikoni ashobora kubangamira iterambere ry’iterambere ry’iterambere no gutera nucleation y’iterambere ry ...
Ibikoresho bya epitaxial bya SiC bifite uburebure bwa mm 200 (santimetero 8) n'imiterere y'imikorere
Igerageza ryavuzwe muri iyi nyandiko ryakozwe ku bikoresho bya epitaxial bya monolithic hot wall SiC epitaxial bifite uburebure bwa mm 150/200 (6/8-inch) byakozwe ku giti cyabyo n’ikigo cya 48th Institute of China Electronics Technology Group Corporation. Ifuru ya epitaxial ishyigikira uburyo bwo gupakira no gupakurura wafer byikora. Ishusho ya 1 ni imbonerahamwe y’imiterere y’imbere y’icyumba cy’inyigo cy’ibikoresho bya epitaxial. Nk’uko bigaragara ku Ishusho ya 1, urukuta rw’inyuma rw’icyumba cy’inyigo ni inzogera ya quartz ifite interlayer ikonjeshejwe n’amazi, naho imbere mu cyuma hari icyumba cy’inyigo gifite ubushyuhe bwinshi, kigizwe n’icyuma gishyushya ubushyuhe cya karuboni, umwobo wa grafiti yihariye, ishingiro rizunguruka rya graphite gaz, nibindi. Inzogera yose ya quartz itwikiriwe na cylindrical induction coil, kandi icyumba cy’inyigo kiri imbere mu cyuma gishyushya hakoreshejwe amashanyarazi akoreshwa mu buryo bwa elegitoroniki. Nkuko bigaragara ku Ishusho ya 1 (b), umwuka utwara, umwuka urimo gukora, na gaze ikoresha imiti igabanya ubushyuhe byose binyura ku buso bwa wafer mu buryo butambitse buva hejuru y'icyumba cyo gukora ibintu bikagera hepfo y'icyumba cyo gukora ibintu kandi bigasohoka mu mpera ya gaze y'inyuma. Kugira ngo habeho uburinganire muri wafer, wafer itwarwa n'umwuka ureremba ihora izunguruka mu gihe cy'igikorwa.
Substrate yakoreshejwe muri iryo gerageza ni substrate ya SiC ifite uburebure bwa mm 150, 200 (inchi 6, 8) <1120> icyerekezo cya 4°off-angle conductive n-type 4H-SiC double-sided polished SiC substrate yakozwe na Shanxi Shuoke Crystal. Trichlorosilane (SiHCl3, TCS) na ethylene (C2H4) ni byo bikoreshwa nk'isoko nyamukuru ry'ikura muri iryo gerageza, muri byo TCS na C2H4 bikoreshwa nk'isoko ya silikoni na karuboni, azote ifite purity nyinshi (N2) ikoreshwa nk'isoko ya doping ya n-type, na hydrogen (H2) ikoreshwa nk'umwuka wo gushonga na gaze yo gutwara. Ubushyuhe bw'ikorwa rya epitaxial ni 1600 ~1660 ℃, igitutu cy'ikorwa ni 8×103 ~12×103 Pa, kandi igipimo cy'ikoreshwa rya gaze yo gutwara H2 ni 100~140 L/min.
1.3 Gupima no kugaragaza imiterere ya epitaxial wafer
Spektrometero ya Fourier infrared (uruganda rukora ibikoresho Thermalfisher, moderi iS50) na mercury probe tester concentration (uruganda rukora ibikoresho Semilab, moderi 530L) byakoreshejwe mu kugaragaza impuzandengo n'ikwirakwizwa ry'ubugari bw'urwego rwa epitaxial n'ingano ya doping; ubunini n'ingano ya doping ya buri ngingo mu rwego rwa epitaxial byagenwe hafatwa ingingo ku murongo w'umurambararo uhuza umurongo usanzwe w'inkombe nkuru kuri 45° hagati ya wafer hamwe no gukuraho impande za 5 mm. Ku wafer ya 150 mm, ingingo 9 zafashwe ku murongo umwe w'umurambararo (diameter ebyiri zari zigororotse), naho ku wafer ya 200 mm, ingingo 21 zafashwe, nk'uko bigaragara ku Ishusho ya 2. Mikorosikopi y'imbaraga za atome (uruganda rukora ibikoresho Bruker, moderi Dimension Icon) yakoreshejwe mu guhitamo ahantu ha 30 μm×30 μm mu gace ko hagati n'agace k'inkombe (gukuraho impande za 5 mm) bya wafer ya epitaxial kugira ngo hagenzurwe ubukana bw'ubuso bw'urwego rwa epitaxial; Ubusembwa bw'urwego rwa epitaxial bwapimwe hakoreshejwe icyuma gipima ubusembwa bw'ubuso (uruganda rukora ibikoresho bya elegitoroniki mu Bushinwa. Ishusho ya 3D yarangwaga na sensor ya radar (model Mars 4410 pro) yo muri Kefenghua.
Igihe cyo kohereza ubutumwa: Nzeri-04-2024