Njengamanje, imboni ye-SiC ishintsha kusuka ku-150 mm (6 inches) kuya ku-200 mm (8 inches). Ukuze kuhlangatshezwane nesidingo esiphuthumayo sama-wafer amakhulu e-SiC homoepitaxial asezingeni eliphezulu embonini, angu-150 mm no-200 mm.Ama-wafer e-homeepitaxial angu-4H-SiCKwalungiswa ngempumelelo ezindaweni zasekhaya kusetshenziswa imishini yokukhulisa i-epitaxial engu-200mm SiC ethuthukiswe ngokuzimela. Kwakhiwe inqubo ye-homoepitaxial efanelekela i-150mm kanye ne-200mm, lapho izinga lokukhula kwe-epitaxial lingaba ngaphezu kuka-60um/h. Ngenkathi ihlangabezana ne-epitaxy esheshayo, ikhwalithi ye-epitaxial wafer inhle kakhulu. Ukufana kobukhulu obungu-150 mm kanye no-200 mmAma-wafer e-SiC epitaxialingalawulwa ngaphakathi kuka-1.5%, ukufana kokuhlushwa kungaphansi kuka-3%, ubuningi besici esibulalayo bungaphansi kuka-0.3 izinhlayiya/cm2, kanye ne-epitaxial surface roughness root mean square Ra ingaphansi kuka-0.15nm, futhi zonke izinkomba zenqubo eyinhloko zisezingeni eliphezulu embonini.
I-Silicon Carbide (i-SiC)ingenye yabamele izinto ze-semiconductor zesizukulwane sesithathu. Inezici zamandla ensimu aqhekeka kakhulu, ukuhanjiswa kokushisa okuhle kakhulu, ijubane elikhulu lokukhukhuleka kwama-electron, kanye nokumelana nemisebe enamandla. Yandise kakhulu amandla okucubungula amandla amadivayisi kagesi futhi ingahlangabezana nezidingo zesevisi zesizukulwane esilandelayo semishini kagesi kagesi yamadivayisi anamandla aphezulu, usayizi omncane, izinga lokushisa eliphezulu, imisebe ephezulu nezinye izimo ezimbi kakhulu. Inganciphisa isikhala, inciphise ukusetshenziswa kwamandla futhi inciphise izidingo zokupholisa. Ilethe izinguquko ezintsha ezimotweni zamandla amasha, ezokuthutha ngesitimela, amagridi ahlakaniphile kanye neminye imikhakha. Ngakho-ke, ama-semiconductor e-silicon carbide aqashelwe njengezinto ezifanele ezizohola isizukulwane esilandelayo samadivayisi kagesi anamandla aphezulu. Eminyakeni yamuva nje, ngenxa yokusekelwa kwenqubomgomo kazwelonke yokuthuthukiswa kwemboni ye-semiconductor yesizukulwane sesithathu, ucwaningo nentuthuko kanye nokwakhiwa kohlelo lwemboni yamadivayisi e-SiC angu-150 mm sekuqediwe eShayina, futhi ukuphepha kochungechunge lwezimboni kuqinisekisiwe ngokuyisisekelo. Ngakho-ke, ukugxila kwemboni kuye kwashintsha kancane kancane kwaba ukulawula izindleko kanye nokuthuthukiswa kokusebenza kahle. Njengoba kuboniswe kuThebula 1, uma kuqhathaniswa no-150 mm, i-SiC engu-200 mm inesilinganiso sokusetshenziswa konqenqema oluphezulu, futhi umkhiqizo wama-single wafer chips ungakhushulwa cishe izikhathi ezingu-1.8. Ngemva kokuba ubuchwepheshe buvuthiwe, izindleko zokukhiqiza ze-single chip zingancishiswa ngo-30%. Ukuphumelela kobuchwepheshe okungu-200 mm kuyindlela eqondile "yokunciphisa izindleko nokwandisa ukusebenza kahle", futhi kuyisihluthulelo semboni ye-semiconductor yezwe lami ukuthi "isebenze ngokuhambisanayo" noma "ihole".
Ihlukile enqubweni yedivayisi ye-Si,Amadivayisi kagesi e-SiC semiconductorZonke zicutshungulwa futhi zilungiswa ngezendlalelo ze-epitaxial njengetshe lesisekelo. Ama-wafer e-epitaxial ayizinto ezibalulekile eziyisisekelo zamadivayisi kagesi e-SiC. Ikhwalithi yesendlalelo se-epitaxial inquma ngqo isivuno sedivayisi, futhi izindleko zayo zibiza u-20% wezindleko zokukhiqiza ama-chip. Ngakho-ke, ukukhula kwe-epitaxial kuyisixhumanisi esibalulekile esiphakathi kumadivayisi kagesi e-SiC. Umkhawulo ophezulu wezinga lenqubo ye-epitaxial unqunywa yimishini ye-epitaxial. Njengamanje, izinga lokuthola indawo yemishini ye-epitaxial engu-150mm SiC eShayina liphezulu kakhulu, kodwa ukwakheka okuphelele kwe-200mm kusalele emuva ezingeni lomhlaba wonke ngesikhathi esifanayo. Ngakho-ke, ukuze kuxazululwe izidingo eziphuthumayo nezinkinga zobunzima bokukhiqizwa kwezinto ezinkulu ze-epitaxial ezisezingeni eliphezulu zokuthuthukiswa kwemboni ye-semiconductor yesizukulwane sesithathu yasekhaya, leli phepha lethula imishini ye-epitaxial engu-200 mm SiC ethuthukiswe ngempumelelo ezweni lakithi, futhi lifunda inqubo ye-epitaxial. Ngokwenza ngcono amapharamitha enqubo njengokushisa kwenqubo, izinga lokugeleza kwegesi yomthwali, isilinganiso se-C/Si, njll., ukufana kokuhlushwa <3%, ukujiya okungalingani <1.5%, ubulukhuni be-Ra <0.2 nm kanye nobuningi besici esibulalayo <0.3 okusanhlamvu/cm2 kwama-150 mm nama-200 mm ama-wafer epitaxial epitaxial ane-200 mm silicon carbide epitaxial furnace ethuthukiswe ngokuzimela. Izinga lenqubo yemishini lingahlangabezana nezidingo zokulungiswa kwedivayisi yamandla ye-SiC esezingeni eliphezulu.
1 Ukuhlolwa
1.1 Isimiso se-I-SiC epitaxialinqubo
Inqubo yokukhula kwe-homoepitaxial ye-4H-SiC ihlanganisa ikakhulukazi izinyathelo ezimbili ezibalulekile, okungukuthi, ukuqoshwa kwe-in-situ okushisa okuphezulu kwe-substrate ye-4H-SiC kanye nenqubo yokufaka umphunga wamakhemikhali ofanayo. Inhloso eyinhloko yokuqoshwa kwe-in-situ ukususa umonakalo ongaphansi komhlaba we-substrate ngemuva kokupholishwa kwe-wafer, uketshezi lokupholishwa okusele, izinhlayiya kanye nengqimba ye-oxide, kanye nesakhiwo sesinyathelo se-athomu esivamile singakhiwa ebusweni be-substrate ngokuqoshwa. Ukuqoshwa kwe-in-situ kuvame ukwenziwa emoyeni we-hydrogen. Ngokwezidingo zangempela zenqubo, inani elincane legesi elisizayo lingangezwa, njenge-hydrogen chloride, i-propane, i-ethylene noma i-silane. Izinga lokushisa lokuqoshwa kwe-in-situ hydrogen ngokuvamile lingaphezu kuka-1 600 ℃, futhi ingcindezi yegumbi lokusabela ngokuvamile ilawulwa ngaphansi kuka-2×104 Pa ngesikhathi senqubo yokuqoshwa.
Ngemva kokuba ubuso be-substrate busebenze ngokusika ngaphakathi, bungena enkambisweni yokubeka umhwamuko wamakhemikhali okushisa okuphezulu, okungukuthi, umthombo wokukhula (njenge-ethylene/propane, i-TCS/silane), umthombo we-doping (umthombo we-n-type doping source nitrogen, umthombo we-p-type doping TMal), kanye negesi eyisizayo njenge-hydrogen chloride zithuthwa ziye ekamelweni lokusabela ngokugeleza okukhulu kwegesi ethwalayo (ngokuvamile i-hydrogen). Ngemva kokuba igesi isabela ekamelweni lokusabela lokushisa eliphezulu, ingxenye yesandulela isabela ngamakhemikhali futhi imunce ebusweni be-wafer, bese kwakheka ungqimba lwe-epitaxial oluyi-single-crystal 4H-SiC olune-concentration ethile ye-doping, ubukhulu obuthile, kanye nekhwalithi ephezulu ebusweni be-substrate kusetshenziswa i-substrate eyodwa-crystal 4H-SiC njengethempulethi. Ngemva kweminyaka eminingi yokuhlola ubuchwepheshe, ubuchwepheshe be-homoepitaxial be-4H-SiC sebuvuthiwe futhi busetshenziswa kabanzi ekukhiqizweni kwezimboni. Ubuchwepheshe be-homoepitaxial be-4H-SiC obusetshenziswa kakhulu emhlabeni bunezici ezimbili ezijwayelekile:
(1) Kusetshenziswa i-off-axis (uma kuqhathaniswa ne-<0001> crystal plane, ebheke ku-<11-20> crystal direction) i-oblique cut substrate njengethempulethi, ungqimba lwe-epitaxial olulodwa oluhlanzekile olune-crystal 4H-SiC olungenazo izingcola lufakwa ku-substrate ngesimo semodi yokukhula kwe-step-flow. Ukukhula kwe-homoepitaxial kokuqala kwe-4H-SiC kusetshenziswe i-substrate ye-crystal enhle, okungukuthi, i-<0001> Si plane yokukhula. Ubuningi bezinyathelo ze-athomu ebusweni be-substrate ye-crystal enhle buphansi futhi ama-terrace abanzi. Ukukhula kwe-nucleation okunezinhlangothi ezimbili kulula ukwenzeka ngesikhathi senqubo ye-epitaxy yokwakha i-3C crystal SiC (3C-SiC). Ngokusika i-off-axis, izinyathelo ze-athomu ezinobubanzi obuphezulu, obuncane zingafakwa ebusweni be-substrate ye-4H-SiC <0001>, futhi i-adsorbed precursor ingafinyelela ngempumelelo isikhundla sesinyathelo se-athomu ngamandla aphansi kakhulu ebusweni ngokusabalala kobuso. Esinyathelweni, isikhundla sokubopha i-athomu yangaphambi kwe-athomu/iqembu lama-molecule sihlukile, ngakho-ke kwimodi yokukhula kokugeleza kwesinyathelo, ungqimba lwe-epitaxial lungadla ifa eliphelele lochungechunge lokufaka i-athomu oluphindwe kabili lwe-Si-C lwe-substrate ukuze kwakheke ikristalu eyodwa enesigaba sekristalu esifanayo ne-substrate.
(2) Ukukhula kwe-epitaxial okusheshayo kufinyelelwa ngokungenisa umthombo we-silicon oqukethe i-chlorine. Ezinhlelweni ezivamile zokufakwa komphunga wamakhemikhali e-SiC, i-silane ne-propane (noma i-ethylene) yizona mithombo eyinhloko yokukhula. Enkambisweni yokwandisa izinga lokukhula ngokwandisa izinga lokugeleza komthombo wokukhula, njengoba ingcindezi engaphelele yengxenye ye-silicon iqhubeka nokukhula, kulula ukwakha amaqoqo e-silicon nge-nucleation yesigaba segesi esifanayo, okunciphisa kakhulu izinga lokusetshenziswa komthombo we-silicon. Ukwakheka kwamaqoqo e-silicon kunciphisa kakhulu ukuthuthukiswa kwesilinganiso sokukhula kwe-epitaxial. Ngesikhathi esifanayo, amaqoqo e-silicon angaphazamisa ukukhula kokugeleza kwesinyathelo futhi abangele i-nucleation yokungalungi. Ukuze kugwenywe i-nucleation yesigaba segesi esifanayo futhi kwandiswe izinga lokukhula kwe-epitaxial, ukwethulwa kwemithombo ye-silicon esekelwe ku-chlorine njengamanje kuyindlela eyinhloko yokwandisa izinga lokukhula kwe-epitaxial le-4H-SiC.
Imishini ye-epitaxial ye-SiC engu-1.2 200 mm (8-intshi) kanye nezimo zenqubo
Ukuhlolwa okuchazwe kuleli phepha kwenziwa konke kumishini ye-SiC epitaxial ehambisanayo engu-150/200 mm (6/8-intshi) ehambisana ne-monolithic hot wall evundlile eyakhiwe ngokuzimela yi-48th Institute of China Electronics Technology Group Corporation. Isithando somlilo se-epitaxial sisekela ukulayishwa nokukhishwa kwe-wafer okuzenzakalelayo ngokuphelele. Isibalo 1 siwumdwebo wesakhiwo sangaphakathi segumbi lokusabela lemishini ye-epitaxial. Njengoba kuboniswe kuMfanekiso 1, udonga lwangaphandle lwegumbi lokusabela luyinsimbi ye-quartz ene-interlayer epholile ngamanzi, kanti ingaphakathi lensimbi liyigumbi lokusabela lokushisa eliphezulu, elakhiwe yi-thermal insulation carbon felt, i-high-purity special graphite cavity, isisekelo esijikelezayo segesi se-graphite, njll. Insimbi yonke ye-quartz imbozwe nge-cylindrical induction coil, kanti igumbi lokusabela ngaphakathi kwensimbi lishiswa ngogesi ngogesi wokungenisa ophakathi. Njengoba kuboniswe kuMfanekiso 1 (b), igesi ethwalayo, igesi yokusabela, kanye negesi yokukhipha izidakamizwa konke kugeleza ebusweni be-wafer ngokugeleza kwe-laminar okuvundlile kusuka phezulu kwegumbi lokusabela kuya phansi kwegumbi lokusabela futhi kukhishwe ekugcineni kwegesi yomsila. Ukuqinisekisa ukuvumelana ngaphakathi kwe-wafer, i-wafer ethwalwa yisisekelo esintantayo somoya ihlala ijikeleziswa phakathi nenqubo.
I-substrate esetshenziswe ekuhlolweni iyi-substrate ye-SiC epholishiwe engu-150 mm, 200 mm (6 amayintshi, 8 amayintshi) <1120> isiqondiso esingu-4°off-angle conductive n-type 4H-SiC epholishiwe emaceleni amabili ekhiqizwa yi-Shanxi Shuoke Crystal. I-Trichlorosilane (SiHCl3, TCS) kanye ne-ethylene (C2H4) kusetshenziswa njengemithombo eyinhloko yokukhula ekuhlolweni kwenqubo, phakathi kwayo i-TCS ne-C2H4 kusetshenziswa njengomthombo we-silicon kanye nomthombo we-carbon ngokulandelana, i-nitrogen ehlanzekile kakhulu (N2) isetshenziswa njengomthombo we-doping wohlobo lwe-n, kanti i-hydrogen (H2) isetshenziswa njengegesi yokuxuba kanye negesi yokuthwala. Ububanzi bokushisa benqubo ye-epitaxial bungu-1600 ~1660 ℃, ingcindezi yenqubo ingu-8×103 ~12×103 Pa, kanti izinga lokugeleza kwegesi yokuthwala i-H2 lingu-100～140 L/min.
1.3 Ukuhlolwa kwe-Epitaxial wafer kanye nokucaciswa kwezimpawu
I-Fourier infrared spectrometer (umkhiqizi wemishini i-Thermalfisher, imodeli i-iS50) kanye ne-mercury probe concentration tester (umkhiqizi wemishini i-Semilab, imodeli 530L) zasetshenziswa ukuchaza isilinganiso kanye nokusatshalaliswa kobukhulu besendlalelo se-epitaxial kanye nokuhlushwa kwe-doping; ukujiya kanye nokuhlushwa kwe-doping kwephuzu ngalinye kusendlalelo se-epitaxial kwanqunywa ngokuthatha amaphuzu eceleni komugqa wobubanzi ohlanganisa umugqa ojwayelekile womphetho oyinhloko wokubhekisela ku-45° enkabeni ye-wafer ngokususwa komphetho ongu-5 mm. Kwi-wafer engu-150 mm, amaphuzu angu-9 athathwe ngomugqa owodwa wobubanzi (amadayamitha amabili ayeqonde komunye nomunye), kanti kwi-wafer engu-200 mm, amaphuzu angu-21 athathwe, njengoba kuboniswe kuMfanekiso 2. I-microscope yamandla e-athomu (umkhiqizi wemishini uBruker, imodeli ye-Dimension Icon) yasetshenziswa ukukhetha izindawo ezingu-30 μm×30 μm endaweni ephakathi nendawo yomphetho (ukususwa komphetho ongu-5 mm) we-wafer ye-epitaxial ukuhlola ubulukhuni bomphezulu wesendlalelo se-epitaxial; Amaphutha engqimba ye-epitaxial alinganiswe kusetshenziswa umhloli wezinkinga zobuso (umenzi wemishini i-China Electronics. I-3D imager yayiphawulwe ngenzwa ye-radar (imodeli i-Mars 4410 pro) evela eKefenghua.
Isikhathi sokuthunyelwe: Septhemba-04-2024