I tēnei wā, kei te huri te ahumahi SiC mai i te 150 mm (6 inihi) ki te 200 mm (8 inihi). Hei whakatutuki i te hiahia nui mō ngā anga SiC homoepitaxial kounga teitei, rahi nui i roto i te ahumahi, 150mm me te 200mmNgā papa homoepitaxial 4H-SiCi angitu te whakarite i runga i ngā papa o te kāinga mā te whakamahi i ngā taputapu whakatipu epitaxial 200mm SiC motuhake. I whakawhanakehia he tukanga homoepitaxial e tika ana mō te 150mm me te 200mm, e taea ai e te tere tipu epitaxial te neke atu i te 60um/h. Ahakoa te tutuki i te epitaxy tere-teitei, he tino pai te kounga o te wafer epitaxial. Ko te matotoru ōrite o te 150 mm me te 200 mmNgā papa epitaxial SiCka taea te whakahaere i roto i te 1.5%, ko te ōritetanga kukū he iti iho i te 3%, ko te kiato hapa mate he iti iho i te 0.3 matūriki/cm2, ā, ko te taratara mata epitaxial o te tapawhā pūtake toharite Ra he iti iho i te 0.15nm, ā, ko ngā tohu tukanga matua katoa kei te taumata matatau o te ahumahi.
Karāpi Hiraka (SiC)Ko tētahi o ngā māngai o ngā rauemi haurua-ā-ira tuatoru o te whakatupuranga. He āhuatanga ōna, arā, he kaha te kaha o te papa pakaru, he pai te kawe wera, he tere nui te rere o te irahiko, me te ātete kaha ki te irahiko. Kua tino whānui ake te kaha tukatuka pūngao o ngā taputapu hiko, ā, ka taea te whakatutuki i ngā whakaritenga ratonga o te whakatupuranga hou o ngā taputapu hiko hiko mō ngā taputapu he kaha teitei, he iti te rahi, he pāmahana teitei, he nui te irahiko me ētahi atu āhuatanga tino kino. Ka taea e ia te whakaiti i te wāhi, te whakaiti i te whakapaunga hiko me te whakaiti i ngā whakaritenga whakamatao. Kua kawea mai e ia ngā huringa hou ki ngā waka hiko hou, te kawe tereina, ngā whatunga atamai me ētahi atu mara. Nō reira, kua mōhiotia ngā haurua-ā-ira silicon carbide hei rauemi tino pai hei ārahi i te whakatupuranga hou o ngā taputapu hiko hiko kaha teitei. I ngā tau tata nei, nā te tautoko kaupapa here ā-motu mō te whanaketanga o te umanga haurua-ā-ira tuatoru o te whakatupuranga, kua oti te rangahau me te whanaketanga me te hanganga o te pūnaha ahumahi taputapu SiC 150 mm i Haina, ā, kua tino whakamanahia te haumarutanga o te mekameka ahumahi. Nō reira, kua neke haere te arotahi o te ahumahi ki te whakahaere utu me te whakapai ake i te whai huatanga. E ai ki te Ripanga 1, ki te whakaritea ki te 150 mm, he nui ake te tere whakamahinga taha o te SiC 200 mm, ā, ka taea te whakanui ake i te putanga o ngā maramara wafer kotahi mā te 1.8 ngā wā. I muri i te pakari o te hangarau, ka taea te whakaiti i te utu hanga o te maramara kotahi mā te 30%. Ko te whanaketanga hangarau o te 200 mm he huarahi tika ki te "whakaiti i ngā utu me te whakanui ake i te whai huatanga", ā, koinei hoki te kī mō te umanga semiconductor o tōku whenua ki te "whakahaere whakarara" tae noa ki te "arataki".
He rerekē i te tukanga taputapu Si,Ngā taputapu hiko haurua-haurua SiCKa tukatukahia, ka whakaritea hoki ngā paparanga epitaxial katoa hei pou. He rauemi taketake nui ngā paparanga epitaxial mō ngā taputapu hiko SiC. Ko te kounga o te paparanga epitaxial te mea e whakatau tika ana i te hua o te taputapu, ā, ko tōna utu te 20% o te utu hanga maramara. Nō reira, ko te tipu epitaxial he hononga takawaenga nui i roto i ngā taputapu hiko SiC. Ko te rohe o runga o te taumata tukanga epitaxial ka whakatauhia e ngā taputapu epitaxial. I tēnei wā, he teitei te taumata o te rohe o ngā taputapu epitaxial SiC 150mm i Haina, engari ko te whakatakotoranga whānui o te 200mm kei muri i te taumata o te ao i te wā kotahi. Nō reira, hei whakaoti i ngā hiahia nui me ngā raruraru aukati o te hanga rauemi epitaxial rahi-rahi, kounga teitei mō te whanaketanga o te umanga semiconductor tuatoru o te motu, ka whakaatuhia e tēnei pepa ngā taputapu epitaxial SiC 200 mm i whakawhanakehia angitu i tōku whenua, ā, ka ako i te tukanga epitaxial. Mā te arotau i ngā tawhā tukanga pēnei i te pāmahana tukanga, te tere rere o te hau kawe, te ōwehenga C/Si, me ētahi atu, ka whiwhi i te ōritetanga kukū <3%, te kore ōritetanga matotoru <1.5%, te taratara Ra <0.2 nm me te kiato hapa kino <0.3 karāhe/cm2 o ngā anga epitaxial SiC 150 mm me te 200 mm me te oumu epitaxial silicon carbide 200 mm kua whakawhanakehia motuhake. Ka taea e te taumata tukanga taputapu te whakatutuki i ngā hiahia o te whakarite taputapu hiko SiC kounga teitei.
1 Whakamātautau
1.1 Te Mātāpono oSiC epitaxialtukanga
Ko te tukanga whakatipu homoepitaxial 4H-SiC e rua ngā mahi matua, arā, te whakairo i roto i te papa 4H-SiC i te pāmahana teitei me te tukanga whakatakoto kohu matū ōrite. Ko te kaupapa matua o te whakairo i roto i te papa ko te tango i te kino o raro i te mata o te papa i muri i te whakakanapa i te wafer, te wai whakakanapa toenga, ngā matūriki me te paparanga waikura, ā, ka taea te hanga i tētahi hanganga taahiraa ngota auau ki runga i te mata o te papa mā te whakairo. Ko te whakairo i roto i te wāhi ka mahia i roto i te hau hauwai. E ai ki ngā whakaritenga o te tukanga tuturu, ka taea hoki te tāpiri i tētahi iti o te hau āwhina, pērā i te hauwai pūhaumāota, te propane, te ethylene, te silane rānei. Ko te pāmahana o te whakairo hauwai i roto i te wāhi he nui ake i te 1 600 ℃, ā, ko te pēhanga o te rūma tauhohenga ka whakahaeretia i raro i te 2 × 104 Pa i te wā o te tukanga whakairo.
I muri i te whakahohenga o te mata o te papa mā te whakairo i roto i te wāhi, ka uru atu ki te tukanga whakatakoto kohu matū pāmahana teitei, arā, ko te pūtake tipu (pēnei i te ethylene/propane, TCS/silane), te pūtake tāpiri (pūtake tāpiri momo-n hauota, pūtake tāpiri momo-p TMAl), me te hau āwhina pēnei i te hauwai pūhaumāota ka haria ki te rūma tauhohenga mā te rere nui o te hau kawe (te nuinga o te wā ko te hauwai). I muri i te tauhohenga o te hau i roto i te rūma tauhohenga pāmahana teitei, ka tauhohe tetahi wāhanga o te matū mua, ka piri ki te mata o te papa, ā, ka hangaia he paparanga epitaxial 4H-SiC kotahi-kiriata me te kukū tāpiri motuhake, te matotoru motuhake, me te kounga teitei ake i runga i te mata o te papa mā te whakamahi i te papa kotahi-kiriata 4H-SiC hei tauira. Whai muri i ngā tau o te tūhuratanga hangarau, kua tino pakari te hangarau homoepitaxial 4H-SiC, ā, e whakamahia whānuitia ana i roto i te hanga ahumahi. Ko te hangarau homoepitaxial 4H-SiC e whakamahia whānuitia ana i te ao he rua ngā āhuatanga noa:
(1) Mā te whakamahi i tētahi papa tapahi whakarara i waho o te tuaka (e pā ana ki te papa karaihe <0001>, e anga atu ana ki te ahunga karaihe <11-20>) hei tauira, ka whakatakotoria he paparanga epitaxial kotahi-kirihiri 4H-SiC parakore, kāore he poke ki runga i te papa hei aratau tipu rere-taahiraa. I whakamahia e te tipu homoepitaxial 4H-SiC tōmua he papa tioata pai, arā, te papa Si <0001> mō te tipu. He iti te kiato o ngā taahitanga ngota i runga i te mata o te papa tioata pai, ā, he whānui ngā papa. He ngāwari te tupu o te tipu nucleation rua-ahu i te wā o te tukanga epitaxy hei hanga i te karaihe 3C SiC (3C-SiC). Mā te tapahi i waho o te tuaka, ka taea te whakauru i ngā taahitanga ngota whānui papa teitei, whaiti ki runga i te mata o te papa 4H-SiC <0001>, ā, ka taea e te matūmua kua mimitihia te tae atu ki te tūranga taahitanga ngota me te kaha mata iti mā te horapa mata. I te taahiraa, he ahurei te tūranga here o te ngota ngota/rōpū ngota ngota mua, nō reira i te aratau tipu rere o te taahiraa, ka taea e te paparanga epitaxial te whiwhi pai i te raupapa whakarārangi paparanga ngota ngota Si-C o te papa hei hanga i tētahi tioata kotahi me te āhua tioata rite ki te papa.
(2) Ka tutuki te tipu tere-epitaxial mā te whakauru i tētahi pūtake silicon kei roto he chlorine. I roto i ngā pūnaha whakatakotoranga kohu matū SiC tuku iho, ko te silane me te propane (ethylene rānei) ngā pūtake tipu matua. I roto i te tukanga whakanui ake i te tere tipu mā te whakanui ake i te tere rere o te pūtake tipu, i te mea kei te piki haere tonu te pēhanga wāhanga taurite o te wāhanga silicon, he ngāwari te hanga i ngā tautau silicon mā te whakakotahitanga hau, ka whakaiti nui i te tere whakamahinga o te pūtake silicon. Ko te hanganga o ngā tautau silicon ka tino whakawhāiti i te whakapainga o te tere tipu epitaxial. I taua wā anō, ka taea e ngā tautau silicon te whakararuraru i te tipu rere hiko me te puta he whakakotahitanga hapa. Hei karo i te whakakotahitanga hau me te whakanui ake i te tere tipu epitaxial, ko te whakauru i ngā pūtake silicon e ahu mai ana i te chlorine te tikanga matua i tēnei wā hei whakanui ake i te tere tipu epitaxial o te 4H-SiC.
Ngā taputapu epitaxial me ngā tikanga tukatuka 1.2 200 mm (8-inihi) SiC
Ko ngā whakamātautau i whakaahuatia i roto i tēnei pepa i whakahaerehia katoatia ki runga i tētahi taputapu epitaxial pakitara wera whakapae SiC hototahi 150/200 mm (6/8-inihi) i whakawhanakehia motuhaketia e te 48th Institute of China Electronics Technology Group Corporation. Ka tautoko te oumu epitaxial i te uta me te tango i te wafer aunoa katoa. Ko te Pikitia 1 he hoahoa kauwhata o te hanganga o roto o te rūma tauhohenga o te taputapu epitaxial. E ai ki te Pikitia 1, ko te pakitara o waho o te rūma tauhohenga he pere kuata me te paparanga wai-whakamatao, ā, ko te roto o te pere he rūma tauhohenga pāmahana-teitei, he mea tito mai i te muka waro whakamahana wera, te kōhao karāti motuhake parakore-teitei, te turanga hurihuri hau karāti, me ētahi atu. Ko te pere kuata katoa kua hipokina ki tētahi koiri whakapūmau porotaka, ā, ko te rūma tauhohenga i roto i te pere ka whakamahanahia mā te hikohiko e tētahi pūtake hiko whakapūmau auau-waenga. E ai ki te Pikitia 1 (b), ka rere te hau kawe, te hau tauhohenga, me te hau tāpiri i roto i te mata o te papa i roto i te rerenga laminar whakapae mai i te pito whakarunga o te rūma tauhohenga ki te pito whakararo o te rūma tauhohenga, ā, ka tukuna mai i te pito hau hiku. Hei whakarite i te ōritetanga i roto i te papa, ka hurihia tonutia te papa e haria ana e te turanga hau e mānu ana i te wā o te tukanga.
Ko te papa i whakamahia i roto i te whakamātautau he papa SiC oro-rua taha-rua, he momo-n 4H-SiC, he 150 mm te whānui, he 200 mm (6 inihi, 8 inihi) arumoni, he 4° te whānui, he koki-kore te ahunga, i hangaia e Shanxi Shuoke Crystal. Ko te Trichlorosilane (SiHCl3, TCS) me te ethylene (C2H4) ngā pūtake tipu matua i roto i te whakamātautau tukanga, ā, ko te TCS me te C2H4 hei pūtake silicon me te pūtake waro, ko te hauota parakore-teitei (N2) hei pūtake tāpiri momo-n, ā, ko te hauwai (H2) hei hau whakamātotoru me te hau kawe. Ko te awhe pāmahana o te tukanga epitaxial he 1 600 ~1 660 ℃, ko te pēhanga tukanga he 8×103 ~12×103 Pa, ā, ko te tere rere o te hau kawe H2 he 100～140 L/min.
1.3 Te whakamātautau me te tautuhi i te angaanga epitaxial
I whakamahia te ine irahiko whatuwhatu Fourier (kaihanga taputapu Thermalfisher, tauira iS50) me te whakamātautau kukū o te mercury (kaihanga taputapu Semilab, tauira 530L) hei whakaahua i te toharite me te tohatoha o te matotoru o te paparanga epitaxial me te kukū tāpiri; i whakatauhia te matotoru me te kukū tāpiri o ia pūwāhi i roto i te paparanga epitaxial mā te tango i ngā pūwāhi i te rārangi diameter e whakawhiti ana i te rārangi noa o te taha tohutoro matua i te 45° i waenganui o te wafer me te tango taha 5 mm. Mō te wafer 150 mm, i tangohia ngā pūwāhi e 9 i te rārangi diameter kotahi (e rua ngā diameter e poutū ana tetahi ki tetahi), ā, mō te wafer 200 mm, i tangohia ngā pūwāhi e 21, e whakaaturia ana i te Pikitia 2. I whakamahia he karu hiko atomika (kaihanga taputapu Bruker, tauira Dimension Icon) hei tīpako i ngā wāhi 30 μm×30 μm i te wāhi pokapū me te wāhi taha (tango taha 5 mm) o te wafer epitaxial hei whakamātautau i te taratara o te mata o te paparanga epitaxial; I inehia ngā hapa o te paparanga epitaxial mā te whakamahi i tētahi taputapu whakamātautau hapa mata (kaihanga taputapu China Electronics). I tautuhia te whakaahua 3D e tētahi pūoko radar (tauira Mars 4410 pro) mai i Kefenghua.
Wā tuku: Hepetema-04-2024