Okwangoku, ishishini leSiC liyaguquka ukusuka kwi-150 mm (6 intshi) ukuya kwi-200 mm (8 intshi). Ukuze kuhlangatyezwane nemfuno engxamisekileyo yobukhulu obukhulu, obuphezulu beSiC homoepitaxial wafers kushishino, 150mm kunye 200mmI-4H-SiC i-homoepitaxial waferszilungiswe ngempumelelo kwii-substrates zasekhaya kusetyenziswa izixhobo zokukhula ezizimeleyo ze-200mm SiC epitaxial. Inkqubo ye-homoepitaxial efanelekileyo kwi-150mm kunye ne-200mm yaphuhliswa, apho izinga lokukhula kwe-epitaxial linokuba likhulu kune-60um / h. Ngelixa udibana ne-epitaxy enesantya esiphezulu, umgangatho we-epitaxial wafer ugqwesile. Ubukhulu obufanayo be-150 mm kunye ne-200 mmI-SiC epitaxial wafersinokulawulwa ngaphakathi kwe-1.5%, ukufana koxinaniso kungaphantsi kwe-3%, ukuxinwa kwesiphako esibulalayo kungaphantsi kwe-0.3 particles / cm2, kunye ne-epitaxial surface roughness root mean square Ra ingaphantsi kwe-0.15nm, kwaye zonke izikhombisi zenkqubo engundoqo zikwinqanaba eliphezulu loshishino.
I-Silicon Carbide (SiC)ungomnye wabameli bezixhobo ze-semiconductor zesizukulwana sesithathu. Ineempawu zokomelela kwebala lokuqhekeka okuphezulu, ukuhanjiswa kwe-thermal okugqwesileyo, i-electron saturation drift velocity enkulu, kunye nokuxhathisa okuqinileyo kwimitha. Yandise kakhulu amandla okusebenza kwamandla ezixhobo zamandla kwaye inokuhlangabezana neemfuno zenkonzo yesizukulwana esilandelayo sombane wezixhobo zombane kwizixhobo ezinamandla amakhulu, ubungakanani obuncinci, ubushushu obuphezulu, imitha ephezulu kunye nezinye iimeko ezigqithisileyo. Inokunciphisa indawo, ukunciphisa ukusetyenziswa kwamandla kunye nokunciphisa iimfuno zokupholisa. Izise iinguqu eziguqukayo kwizithuthi zamandla amatsha, ezothutho zikaloliwe, iigridi ezikrelekrele kunye namanye amabala. Ke ngoko, i-silicon carbide semiconductors iye yabonwa njengeyona nto ifanelekileyo eya kukhokelela kwisizukulwana esilandelayo sezixhobo zombane ezinamandla aphezulu. Kwiminyaka yakutshanje, ngenxa yenkxaso yomgaqo-nkqubo wesizwe wophuhliso lwemveliso ye-semiconductor yesizukulwana sesithathu, uphando kunye nophuhliso kunye nokwakhiwa kwenkqubo yoshishino lwe-SiC ye-150 mm sele igqityiwe ngokusisiseko e-China, kwaye ukhuseleko lwe-industrial chain chain luqinisekisiwe ngokusisiseko. Ke ngoko, ugqaliselo lweshishini luye lwatshintsha ngokuthe ngcembe kulawulo lweendleko kunye nokuphucula ukusebenza kakuhle. Njengoko kuboniswe kwiThebhile 1, xa kuthelekiswa ne-150 mm, i-200 mm SiC inezinga eliphezulu lokusetyenziswa kwe-edge, kwaye ukukhutshwa kwee-chips ze-wafer single kunokunyuswa malunga namaxesha e-1.8. Emva kokuba iteknoloji ivuthwa, iindleko zokuvelisa i-chip enye zingancitshiswa ngama-30%. Ukuphumelela kweteknoloji ye-200 mm yindlela ethe ngqo "yokunciphisa iindleko kunye nokwandisa ukusebenza kakuhle", kwaye ikwayisitshixo kwishishini lelizwe lam le-semiconductor ukuba "liqhube ngokuhambelanayo" okanye "ukukhokela".
Yahlukile kwinkqubo yesixhobo seSi,Izixhobo zamandla ze-SiC semiconductorzonke zicutshungulwa kwaye zilungiswe ngeemaleko ze-epitaxial njengelitye lembombo. Ii-wafers ze-Epitaxial ziyimfuneko esisiseko yezixhobo zamandla ze-SiC. Umgangatho we-epitaxial layer ichaza ngokuthe ngqo isivuno sesixhobo, kwaye iindleko zayo zithatha i-20% yeendleko zokuvelisa i-chip. Ke ngoko, ukukhula kwe-epitaxial likhonkco elibalulekileyo eliphakathi kwizixhobo zamandla ze-SiC. Umda ophezulu wenqanaba lenkqubo ye-epitaxial unqunywe ngezixhobo ze-epitaxial. Okwangoku, idigri ye-localization ye-150mm ye-SiC yezixhobo ze-epitaxial e-China iphezulu, kodwa i-layout iyonke ye-200mm isemva kwinqanaba lamazwe ngamazwe ngaxeshanye. Ngoko ke, ukuze kulungiswe iimfuno ezingxamisekileyo kunye neengxaki ze-bottleneck zobukhulu obukhulu, umgangatho ophezulu we-epitaxial wokwenziwa kwezinto zokuphuhliswa kwemveliso ye-semiconductor yasekhaya yesizukulwana sesithathu, eli phepha lizisa izixhobo ze-epitaxial ze-200 mm ze-SiC eziphuhliswe ngempumelelo kwilizwe lam, kwaye lifunda inkqubo ye-epitaxial. Ngokulungisa iiparameters zenkqubo ezifana nobushushu benkqubo, isantya sokuhamba kwegesi, i-C / Si ratio, njl., ukufana koxinaniso <3%, ubukhulu obungafaniyo <1.5%, uburhabaxa u-Ra <0.2 nm kunye noxinzelelo olubulalayo <0.3 iinkozo / cm2 ye-150 mm kunye ne-200 mm SiC ephuhliswe i-silicone epitaxial e-epitaxial 0 epitaxial silicon ezimeleyo. iziko lifunyenwe. Inqanaba lenkqubo yezixhobo lingahlangabezana neemfuno zokulungiswa kwesixhobo samandla esikumgangatho ophezulu weSiC.
1 Linge
1.1 Umgaqo-siseko weSiC epitaxialinkqubo
Inkqubo yokukhula kwe-homoepitaxial ye-4H-SiC ikakhulu ibandakanya amanyathelo angundoqo e-2, oko kukuthi, i-high-temperature in-situ etching ye-4H-SiC substrate kunye ne-homogeneous chemical vapor deposition process. Eyona njongo iphambili ye-substrate in-situ etching kukususa umonakalo ongaphantsi komhlaba we-substrate emva kokupolisha kwe-wafer, ulwelo olushiyekileyo lokupholisha, amasuntswana kunye ne-oxide layer, kunye nesakhiwo senyathelo eliqhelekileyo le-athomu linokwakheka kumphezulu we-substrate ngokucofa. I-in-situ etching idla ngokuqhutyelwa kwi-atmosphere ye-hydrogen. Ngokweemfuno zangempela zenkqubo, inani elincinci legesi elincedisayo lingaphinda lifakwe, njenge-hydrogen chloride, ipropane, i-ethylene okanye i-silane. Ubushushu be-i-situ hydrogen etching ngokubanzi bungaphezulu kwe-1 600 ℃, kwaye uxinzelelo lwegumbi lokusabela lulawulwa ngokubanzi ngezantsi kwe-2 × 104 Pa ngexesha lenkqubo yokubhala.
Emva kokuba umphezulu we-substrate uvulwe yi-in-situ etching, ingena kwinkqubo yokubeka umphunga wekhemikhali yobushushu obuphezulu, oko kukuthi, umthombo wokukhula (ofana ne-ethylene/propane, TCS/silane), umthombo we-doping (n-uhlobo lwe-doping source nitrogen, umthombo we-p-uhlobo lwe-doping TMAl), kunye negesi encedisayo efana ne-hydrogen kwi-carrier ye-carrier reaction (ngokuqhelekileyo i-hydrogen). Emva kokuba igesi iphendule kwigumbi lokuphendula lobushushu obuphezulu, inxalenye ye-precursor isabela kwikhemikhali kunye ne-adsorbs kwi-wafer surface, kunye ne-crystal homogeneous 4H-SiC epitaxial layer ene-concentration ye-doping ethile, ubukhulu obuthile, kunye nomgangatho ophezulu wenziwa kwi-substrate surface usebenzisa i-single-crystal template 4H-SiC substrate. Emva kweminyaka yokuhlolwa kwezobugcisa, iteknoloji ye-4H-SiC ye-homoepitaxial ikhulile ngokusisiseko kwaye isetyenziswa ngokubanzi kwimveliso yamashishini. Iteknoloji ye-homoepitaxial ye-4H-SiC esetyenziswa kakhulu kwihlabathi ineempawu ezimbini eziqhelekileyo:
(1) Ukusebenzisa i-off-axis (ngokumalunga ne- <0001> i-crystal plane, ngokubhekiselele kwi- <11-20> i-crystal direction) i-oblique cut substrate njenge-template, i-high-purity single-crystal 4H-SiC epitaxial layer ngaphandle kokungcola ifakwe kwi-substrate ngendlela ye-step-flow mode yokukhula. Ekuqaleni kwe-4H-SiC ukukhula kwe-homoepitaxial kusetyenziswa i-crystal substrate efanelekileyo, oko kukuthi, <0001> Si indiza yokukhula. Ubuninzi bamanyathelo e-athomu kumphezulu we-crystal substrate ephilileyo iphantsi kwaye i-terraces ibanzi. Ukukhula kwe-nucleation yamacala amabini kulula ukuba kwenzeke ngexesha lenkqubo ye-epitaxy ukwenza i-3C crystal SiC (3C-SiC). Ngokusikwa kwe-off-axis, ubuninzi obuphezulu, amanyathelo e-athomu yobubanzi obunqamlekileyo bunokwaziswa kumphezulu we-4H-SiC <0001> i-substrate, kunye ne-adsorbed precursor inokufikelela ngokufanelekileyo kwi-athomu yesinyathelo se-athomu kunye namandla aphantsi aphantsi komhlaba ngokusebenzisa i-surface diffusion. Kwinqanaba, i-athomu ye-athom / i-molecular group bonding iyingqayizivele, ngoko kwimowudi yokukhula kwenyathelo, i-epitaxial layer inokuthi izuze ngokugqibeleleyo i-Si-C i-athomu ephindwe kabini yolandelelwano lwe-atom yokupakisha i-substrate ukwenza i-crystal enye kunye nesigaba sekristal esifanayo njenge-substrate.
(2) Ukukhula kwe-epitaxial ngesantya esiphezulu kufezekiswa ngokuzisa umthombo we-silicon ene-chlorine. Kwiinkqubo eziqhelekileyo ze-SiC zemichiza yokubeka umphunga, i-silane kunye nepropane (okanye i-ethylene) yimithombo ephambili yokukhula. Kwinkqubo yokunyusa izinga lokukhula ngokunyusa izinga lokukhula komthombo wokukhula, njengoko ukulingana koxinzelelo lwenxalenye ye-silicon iqhubeka nokukhula, kulula ukwenza amaqoqo e-silicon nge-homogeneous gas phase nucleation, enciphisa kakhulu izinga lokusetyenziswa komthombo we-silicon. Ukwenziwa kwamaqela e-silicon kunciphisa kakhulu ukuphuculwa kwezinga lokukhula kwe-epitaxial. Kwangelo xesha, amaqela e-silicon anokuphazamisa ukukhula kwamanyathelo kwaye abangele i-nucleation yesiphene. Ukuze ugweme i-homogeneous gas phase nucleation kunye nokwandisa izinga lokukhula kwe-epitaxial, ukuqaliswa kwemithombo ye-silicon esekelwe kwi-chlorine okwangoku yindlela eqhelekileyo yokunyusa izinga lokukhula kwe-epitaxial ye-4H-SiC.
1.2 200 mm (8-intshi) izixhobo ze-SiC epitaxial kunye neemeko zenkqubo
Imifuniselo echazwe kweli phepha zonke zaqhutywa kwi-150/200 mm (6/8-intshi) ehambelanayo monolithic othe tyaba hot udonga SiC izixhobo epitaxial ngokuzimeleyo zaphuhliswa 48th Institute of China Electronics Technology Group Corporation. Isithando somlilo se-epitaxial sixhasa ngokupheleleyo ukulayishwa kwe-wafer kunye nokukhulula. Umzobo we-1 ngumzobo oqingqiweyo wesakhiwo sangaphakathi segumbi lokuphendula lezixhobo ze-epitaxial. Njengoko kuboniswe kwi-Figure 1, udonga lwangaphandle lwegumbi lokuphendula luyintsimbi ye-quartz ene-interlayer epholileyo yamanzi, kwaye ingaphakathi lentsimbi ligumbi lokuphendula lobushushu obuphezulu, elihlanganiswe ne-thermal insulation carbon, i-high-purity ekhethekileyo ye-graphite cavity, i-graphite gas-floating rotating base-roating, njl. Igumbi lokusabela ngaphakathi kwentsimbi lifudunyezwe ngombane ngonikezelo lwamandla olwenziwa ngamaza aphakathi. Njengoko kubonisiwe kuMfanekiso 1 (b), irhasi yokuthwala, igesi yokusabela, kunye nerhasi yedoping zonke zihamba ngaphaya kommandla we-wafer kwi-laminar ethe tyaba yokuqukuqela ukusuka phezulu kwegumbi lokusabela ukuya kumlambo ongezantsi wegumbi lokusabela kwaye zikhutshwe ekupheleni kwerhasi yomsila. Ukuqinisekisa ukuhambelana phakathi kwe-wafer, i-wafer eqhutywe yisiseko somoya esijikelezayo sihlala sijikeleza ngexesha lenkqubo.
I-substrate esetyenzisiweyo kuvavanyo yintengiso ye-150 mm, i-200 mm (i-6 intshi, i-8 intshi) <1120> isalathiso se-4 ° off-angle conductive n-uhlobo lwe-4H-SiC ephindwe kabini epholisiweyo ye-SiC substrate eveliswe nguShanxi Shuoke Crystal. I-Trichlorosilane (i-SiHCl3, i-TCS) kunye ne-ethylene (i-C2H4) isetyenziswa njengemithombo ephambili yokukhula kwinkqubo yovavanyo, phakathi kwayo i-TCS kunye ne-C2H4 zisetyenziswa njengomthombo we-silicon kunye nomthombo wekhabhoni ngokulandelanayo, i-nitrogen ecocekileyo ephezulu (N2) isetyenziswe njengomthombo we-doping we-n, kunye ne-hydrogen (H2) isetyenziswe njenge-gas ye-dilution kunye ne-carrier gas. Uluhlu lweqondo lokushisa lwenkqubo ye-epitaxial yi-1 600 ~ 1 660 ℃, uxinzelelo lwenkqubo yi-8 × 103 ~ 12 × 103 Pa, kunye ne-H2 carrier gas flow rate yi-100～140 L / min.
1.3 Uvavanyo lwe-Epitaxial wafer kunye neempawu
I-Fourier infrared spectrometer (umenzi wezixhobo i-Thermalfisher, imodeli iS50) kunye nomvavanyi wogxininiso wemekyuri (umenzi wezixhobo iSemilab, imodeli 530L) zisetyenziselwe ukubonisa intsingiselo kunye nokusasazwa kobunzima be-epitaxial kunye nokuxinana kwedoping; ubukhulu kunye noxinzelelo lwe-doping yenqaku ngalinye kwi-epitaxial layer yamiselwa ngokuthatha amanqaku kunye nomgca wedayamitha unqumla umgca oqhelekileyo we-reference edge kwi-45 ° kumbindi we-wafer kunye nokususwa komphetho we-5 mm. Kwi-wafer ye-150 mm, amanqaku angama-9 athathwe ngomgca we-diameter enye (i-diameters ezimbini zi-perpendicular enye kwenye), kunye ne-wafer ye-200 mm, amanqaku angama-21 athathwe, njengoko kubonisiwe kuMzobo 2. I-microscope yamandla e-atomic (umenzi wezixhobo iBruker, imodeli yeDimension Icon) yasetyenziselwa ukukhetha i-30 μm kunye nommandla we-edge kwindawo ye-30 μm × 3 ukususwa) kwe-epitaxial wafer ukuvavanya uburhabaxa bomgangatho we-epitaxial layer; iziphene zomaleko we-epitaxial zilinganiswe kusetyenziswa umhloli wesiphako somphezulu (umenzi wezixhobo ze-China Electronics Umzobo we-3D ubonakaliswe yinzwa ye-radar (imodeli ye-Mars 4410 pro) evela e-Kefenghua.
Ixesha lokuposa: Sep-04-2024