I ka ʻoihana semiconductor e ulu wikiwiki nei, he mea koʻikoʻi nā mea e hoʻonui ai i ka hana, ka lōʻihi, a me ka pono. ʻO kekahi o ia ʻano hana hou ʻo Tantalum Carbide (TaC) coating, kahi papa pale ʻoki ʻoki i hoʻopili ʻia i nā ʻāpana graphite. Ke ʻimi nei kēia blog i ka wehewehe ʻana o TaC coating, nā pono ʻenehana, a me kāna mau noi hoʻololi i ka hana semiconductor.
Ⅰ. He aha ka TaC Coating?
ʻO ka uhi ʻana o TaC he papa seramika hana kiʻekiʻe i haku ʻia me ka tantalum carbide (kahi pūhui o ka tantalum a me ke kalapona) i waiho ʻia ma luna o nā graphite surfaces. Hoʻohana pinepine ʻia ka uhi me ka hoʻohana ʻana i ka Chemical Vapor Deposition (CVD) a i ʻole Physical Vapor Deposition (PVD), e hana ana i kahi pale paʻa, ultra-pure e pale ana i ka graphite mai nā kūlana koʻikoʻi.
Nā waiwai nui o ka uhi ʻana o TaC
●Paʻa Kūlana Kiʻekiʻe: Kū i nā mahana ma mua o 2200°C, ʻoi aku ka maikaʻi o nā mea kahiko e like me ka silicon carbide (SiC), e hoʻohaʻahaʻa ana ma luna o 1600°C.
●Palekana Kemika: Kūʻē i ka ʻino mai ka hydrogen (H₂), ammonia (NH₃), nā mahu silika, a me nā metala hoʻoheheʻe ʻia, koʻikoʻi no nā kaiapuni hana semiconductor.
●Maʻemaʻe Kiʻekiʻe Loa: Nā pae haumia ma lalo o 5 ppm, e hōʻemi ana i ka pōʻino i loko o nā kaʻina ulu kristal.
●Paʻa wela a me ka mīkini: Hoʻopili ikaika i ka graphite, hoʻonui wela haʻahaʻa (6.3 × 10⁻⁶ / K), a me ka paʻakikī (~ 2000 HK) e hōʻoia i ka lōʻihi ma lalo o ke kaʻa uila.
Ⅱ. TaC Coating in Semiconductor Manufacturing: Key Applications
ʻO nā mea graphite i uhi ʻia ʻo TaC he mea nui ia i ka hana semiconductor kiʻekiʻe, ʻoi aku no nā mea hana silicon carbide (SiC) a me gallium nitride (GaN). Ma lalo iho kā lākou mau hihia hoʻohana koʻikoʻi:
1. SiC Hoʻokahi Crystal Ulu
He mea nui nā wafers SiC no nā uila uila a me nā kaʻa uila. Hoʻohana ʻia nā crucibles graphite i uhi ʻia ʻo TaC i nā ʻōnaehana ʻo Physical Vapor Transport (PVT) a me High-Temperature CVD (HT-CVD) i:
● Kāohi i ka hoʻohaumia ʻana: ʻO ka maʻiʻo haʻahaʻa haumia haʻahaʻa o TaC (e laʻa, boron <0.01 ppm vs. 1 ppm i ka graphite) e hōʻemi ana i nā hemahema o nā kristal SiC, e hoʻomaikaʻi ana i ka resistivity wafer (4.5 ohm-cm vs. 0.1 ohm-cm no ka graphite i uhi ʻole ʻia).
● Hoʻonui i ka hoʻokele wela: ʻO ka hoʻokuʻu like ʻana (0.3 ma 1000°C) e hōʻoia i ka hāʻawi ʻana i ka wela, e hoʻonui ana i ka maikaʻi kristal.
2. Epitaxial Growth (GaN/SiC)
I loko o nā reactors Metal-Organic CVD (MOCVD), nā mea i uhi ʻia ʻo TaC e like me nā mea lawe wafer a me nā injectors:
●Kāohi i nā hana kinoea: Kū'ē i ke kālai ʻia e ka amonia a me ka hydrogen ma 1400°C, e mālama ana i ka pono o ka reactor.
●Hoʻonui i ka hua: Ma ka hōʻemi ʻana i ka hoʻokahe ʻana mai ka graphite, hoʻemi ka uhi ʻana o CVD TaC i nā hemahema i nā papa epitaxial, koʻikoʻi no nā LED kiʻekiʻe a me nā mea hana RF.
3. Nā polokalamu Semiconductor ʻē aʻe
●Nā mea hoʻoheheʻe wela kiʻekiʻe: Loaʻa ka pōmaikaʻi o nā mea susceptors a me nā mea hoʻomehana i ka hana ʻana o GaN mai ka paʻa ʻana o TaC i nā kaiapuni waiwai hydrogen.
●Hana Wafer: ʻO nā mea i uhi ʻia e like me nā apo a me nā poʻi e hōʻemi i ka hoʻohaumia ʻana i ka metala i ka wā o ka hoʻoili ʻana
Ⅲ. No ke aha i ʻoi aku ka maikaʻi o ka TaC Coating i nā mea ʻē aʻe?
ʻO ka hoʻohālikelike me nā mea maʻamau e hōʻike ana i ka maikaʻi o TaC:
| Waiwai | Ka uhi ʻana o TaC | Ka uhi ʻana o SiC | Pākuʻi ʻole |
| Mahana Max | >2200°C | <1600°C | ~2000°C (me ka degradation) |
| Ka helu ʻana ma ka NH₃ | 0.2 µm/h | 1.5 µm/h | N/A |
| Nā pae haumia | <5 ppm | Kiʻekiʻe | 260 ppm oxygen |
| ʻO ke kū ʻana i ka haʻalulu wela | maikaʻi loa | Kaumaha | ʻilihune |
Loaʻa ka ʻikepili mai nā hoʻohālikelike ʻoihana
IV. No ke aha e koho ai i ka VET?
Ma hope o ka hoʻomau mau ʻana i ka noiʻi ʻenehana a me ka hoʻomohala ʻana,VETʻO nā ʻāpana i uhi ʻia ʻo Tantalum carbide (TaC), e like meʻO ke apo alakaʻi graphite i uhi ʻia ʻo TaC, ʻO CVD TaC mea hoʻopaʻa paʻa paʻa, TaC Coated Susceptor for Epitaxy Equipment,ʻO ka tantalum carbide i uhi ʻia i nā mea graphite porousaWafer susceptor me ka uhi TaC, kaulana loa i nā mākeke ʻEulopa a me ʻAmelika. Manaʻo nui ʻo VET e lilo i hoa pili lōʻihi.
Ka manawa hoʻouna: Apr-10-2025


