Loaʻa iā SiC nā waiwai kino a me nā kemika maikaʻi loa, e like me ke kiko heheʻe kiʻekiʻe, ka paʻakikī kiʻekiʻe, ke kūpaʻa i ka pala a me ke kūpaʻa oxidation. ʻOi loa ma ka pae o 1800-2000 ℃, loaʻa iā SiC ke kūpaʻa ablation maikaʻi. No laila, he ākea nā manaʻolana noi ma ka aerospace, nā lako kaua a me nā kahua ʻē aʻe. Eia naʻe, ʻaʻole hiki ke hoʻohana ʻia ʻo SiC iho.he ʻano hanamea hana,no laila hoʻohana pinepine ʻia ke ʻano uhi ʻana e hoʻohana i kona kūpaʻa ʻana i ke komo ʻana a me ke kū'ē ʻana i ka ablationce.
Karbida silikaʻO ka mea semiconductor (SIC) ka hanauna ʻekolueUa hoʻomohala ʻia ka mea miconductor ma hope o ka mea semiconductor element hanauna mua (Si, GE) a me ka mea semiconductor hui hanauna ʻelua (GaAs, gap, InP, etc.). Ma ke ʻano he mea semiconductor band gap ākea, loaʻa i ka silicon carbide nā ʻano o ka laulā band gap nui, ka ikaika o ke kahua breakdown kiʻekiʻe, ka conductivity thermal kiʻekiʻe, ka wikiwiki o ka saturation drift carrier kiʻekiʻe, ka dielectric constant liʻiliʻi, ke kūpaʻa radiation ikaika a me ke kūpaʻa kemika maikaʻi. Hiki ke hoʻohana ʻia e hana i nā mea hana alapine kiʻekiʻe a me ka mana kiʻekiʻe me ke kūpaʻa wela kiʻekiʻe a hiki ke hoʻohana ʻia i nā manawa i kūpono ʻole ai nā mea silicon, a i ʻole e hana i ka hopena i paʻakikī ai nā mea silicon e hana ma nā noi maʻamau.
Ka hoʻohana nui: hoʻohana ʻia no ka ʻoki ʻana i ka uea o 3-12 ʻīniha monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, etc. Nā mea hana ʻenekinia no ka ʻoihana photovoltaic solar, ʻoihana semiconductor a me ka ʻoihana piezoelectric crystal.Hoʻohana ʻia masemiconductor, koʻokoʻo uila, element kaapuni, noi wela kiʻekiʻe, mea ʻike ultraviolet, mea kūkulu, astronomy, disc brake, clutch, kānana particulate diesel, pyrometer filament, kiʻiʻoniʻoni seramika, mea ʻokiʻoki, mea hoʻomehana, wahie nukelea, mea hoʻonani, kila, lako pale, kākoʻo catalyst a me nā kahua ʻē aʻe
Ka manawa hoʻouna: Pepeluali-17-2022