Ibisobanuro by'igicuruzwa
Isosiyete yacu itanga serivisi zo gusiga SiC hakoreshejwe uburyo bwa CVD ku buso bwa grafiti, keramike n'ibindi bikoresho, kugira ngo imyuka yihariye irimo karuboni na silikoni ikore ku bushyuhe bwinshi kugira ngo ibone molekile za SiC nziza cyane, molekile zishyizwe ku buso bw'ibikoresho bitwikiriwe, bigakora urwego rwo kurinda rwa SIC.
Ibiranga by'ingenzi:
1. Ubudahangarwa ku bushyuhe bwinshi bwo kuzura:
Ubudahangarwa bw'umwuka ukabije buracyari bwiza cyane iyo ubushyuhe buri hejuru nka 1600 C.
2. Ubuziranenge bwinshi: bukorwa n'umwuka w'ibinyabutabire urimo chlorine mu gihe cy'ubushyuhe bwinshi.
3. Ubudahangarwa bw'isuri: gukomera cyane, ubuso buto, uduce duto.
4. Ubudahangarwa ku ngaruka: aside, alkali, umunyu n'ibinyabutabire by'umwimerere.
Ibisobanuro by'ingenzi bya CVD-SIC Coating
| Imitungo ya SiC-CVD | ||
| Imiterere ya kristu | Icyiciro cya FCC β | |
| Ubucucike | g/cm³ | 3.21 |
| Ubukomere | Ubukomere bwa Vickers | 2500 |
| Ingano y'ibinyampeke | μm | 2 ~ 10 |
| Ubuziranenge bw'ibinyabutabire | % | 99.99995 |
| Ubushobozi bwo gushyuha | J·kg-1 ·K-1 | 640 |
| Ubushyuhe bwo gushyushya | ℃ | 2700 |
| Imbaraga za Feleksiyuramu | MPa (RT 4-point) | 415 |
| Modulus ya Young | Gpa (4pt bend, 1300℃) | 430 |
| Kwagura Ubushyuhe (CTE) | 10-6K-1 | 4.5 |
| Ubushobozi bwo gutwara ubushyuhe | (Ubugari/mK) | 300 |
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