I-OEM/ODM GaN-Baseddepitaxial kwiSic Substrates ezithengiswa ngexabiso eliphantsi 4′′

Umfanekiso oMboniso we-OEM/ODM GaN-Baseddepitaxial on Sic Substrates 4′′

Inkcazo emfutshane:

Izithwali ze-wafer ezisetyenziswa ekuqhubekeni kokukhula kwe-epitaxial kufuneka zinyamezele amaqondo obushushu aphezulu kunye nokucoca okuqatha kweekhemikhali. Ii-susceptors zeCoorsTek Clear Carbon™ zenzelwe ngokukodwa ezi zixhobo zinzima ze-epitaxy. Ulwakhiwo lwazo lwe-graphite olune-high-purity silicon carbide (SiC) coated graphite lubonelela ngokumelana nobushushu okuphezulu, kunye nokufana kobushushu ukuze kubekho ubukhulu kunye nokumelana okulinganayo kwe-epi layer, kunye nokumelana okuhlala ixesha elide kweekhemikhali. I-Fine SiC crystal coating ibonelela ngomphezulu ococekileyo nogudileyo, obalulekileyo ekuphathweni kuba ii-wafers ezicocekileyo zidibana ne-susceptor kwiindawo ezininzi kulo lonke indawo yazo.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Yindlela elungileyo yokuphucula iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso kunye nezisombululo ezinobuchule kubathengi sisebenzisa amava okusebenza amangalisayo kwiWholesale OEM/ODM GaN-Baseddepitaxial kwiSic Substrates 4′′, Sigxila ekwakheni uphawu lwethu kunye nokudibanisa nezixhobo ezininzi ezinamava kunye nezixhobo zodidi oluphezulu. Iimpahla zethu ezifanelekileyo.
Yindlela elungileyo yokuphucula iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso kunye nezisombululo ezinobuchule kubathengi sisebenzisa amava okusebenza amangalisayo kubo bonke.Ii-substrates ze-China GaN kunye neFilimu ye-GaN, Ngoluhlu olubanzi, umgangatho olungileyo, amaxabiso afanelekileyo kunye noyilo olunesitayile, iimpahla zethu zisetyenziswa kakhulu kushishino lobuhle nakwamanye amashishini. Iimveliso zethu kunye nezisombululo zethu ziyaqatshelwa kwaye zithembekile ngabasebenzisi kwaye zinokuhlangabezana neemfuno zoqoqosho nezentlalo ezitshintsha rhoqo.

Izithwali ze-graphite ze-SiC zokugquma i-MOCVD

Zonke ii-susceptors zethu zenziwe nge-graphite enamandla aphezulu. Zuza kubumsulwa obuphezulu bee-graphite zethu - ezenzelwe ngokukodwa iinkqubo ezinzima ezifana ne-epitaxy, ukukhulisa iikristale, ukufakelwa kwee-ion kunye nokugrumba kweplasma, kunye nokuveliswa kweetships ze-LED.

Ingcaciso yeMveliso
I-SiC coating ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya oxidizing.
I-CVD SiC okanye i-CVI SiC ifakwa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. I-coating ingafakwa ngobukhulu obahlukeneyo nakwiindawo ezinkulu kakhulu.

Icandelo

Izithwali ze-graphite ze-SiC zokugquma i-MOCVD

Iingenelo ezikhethekileyo ze-susceptors zethu ze-graphite ezine-SiC ziquka ubunyulu obuphezulu kakhulu, ukugquma okufanayo kunye nobomi obugqwesileyo benkonzo. Zikwanokumelana okuphezulu kweekhemikhali kunye neempawu zozinzo lobushushu.

Sigcina ukunyamezelana okusondeleyo xa sisebenzisa i-SiC coating, sisebenzisa i-machining echanekileyo ukuqinisekisa iprofayili ye-susceptor efanayo. Sikwavelisa izixhobo ezineempawu ezifanelekileyo zokumelana nombane ezisetyenziswa kwiinkqubo ezifudunyezwayo. Zonke izinto ezigqityiweyo ziza nesatifikethi sokuthobela ubumsulwa kunye nobukhulu.

Isicelo:

Iimbonakalo:
· Ukumelana kakuhle nobushushu
· Ukumelana kakuhle nomothuko womzimba
· Ukumelana kakuhle kweekhemikhali
· Ucoceko Oluphezulu Kakhulu
· Ukufumaneka kwiMilo eNcinci
· Ingasetyenziswa phantsi kwe-Oxidizing AtmosphereIimpawu eziqhelekileyo zezinto ezisisiseko zeGraphite:

Ubuninzi Obubonakalayo:	1.85 g/cm3
Ukumelana nombane:	11 μΩm
Amandla okuGuquka:	I-49 MPa (500kgf/cm2)
Ukuqina koLwandle:	58
Uthuthu:	<5ppm
Ukuqhuba kwe-Thermal:	116 W/mK (100 kcal/mhr-℃)

Yindlela elungileyo yokuphucula iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso kunye nezisombululo ezinobuchule kubathengi sisebenzisa amava okusebenza amangalisayo kwiWholesale OEM/ODM GaN-Baseddepitaxial kwiSic Substrates 4′′, Sigxila ekwakheni uphawu lwethu kunye nokudibanisa nezixhobo ezininzi ezinamava kunye nezixhobo zodidi oluphezulu. Iimpahla zethu ezifanelekileyo.
I-OEM/ODM ethengiswayo ngobuninziIi-substrates ze-China GaN kunye neFilimu ye-GaN, Ngoluhlu olubanzi, umgangatho olungileyo, amaxabiso afanelekileyo kunye noyilo olunesitayile, iimpahla zethu zisetyenziswa kakhulu kushishino lobuhle nakwamanye amashishini. Iimveliso zethu kunye nezisombululo zethu ziyaqatshelwa kwaye zithembekile ngabasebenzisi kwaye zinokuhlangabezana neemfuno zoqoqosho nezentlalo ezitshintsha rhoqo.