I-OEM/ODM GaN-Baseddepitaxial on Sic Substrates ethengiswa ngobuningi engu-4′′

Isithombe Esifakiwe Esine-OEM/ODM GaN-Baseddepitaxial on Sic Substrates Esingu-4′′

Incazelo emfushane:

Izithwali ze-wafer ezisetshenziswa ekucubungulweni kokukhula kwe-epitaxial kumele zibekezelele amazinga okushisa aphezulu kanye nokuhlanzwa kwamakhemikhali okunzima. Ama-susceptor e-CoorsTek Clear Carbon™ aklanyelwe ngqo lezi zinhlelo zokusebenza zemishini ye-epitaxy ezidingayo. Ukwakhiwa kwawo kwe-graphite ehlanganiswe ne-silicon carbide (SiC) ehlanzekile kakhulu kunikeza ukumelana nokushisa okuphezulu, ngisho nokufana kokushisa ukuze kube nobukhulu obuhambisanayo kanye nokumelana kwamakhemikhali, kanye nokumelana kwamakhemikhali okuhlala isikhathi eside. I-Fine SiC crystal coating inikeza indawo ehlanzekile, ebushelelezi, ebalulekile ekuphathweni njengoba ama-wafer ahlanzekile ethinta i-susceptor ezindaweni eziningi kuyo yonke indawo yawo.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo nezixazululo zethu kanye nokulungisa. Umsebenzi wethu kufanele kube ukukhiqiza imikhiqizo nezixazululo eziqanjiwe kumakhasimende sisebenzisa isipiliyoni esimangalisayo sokusebenza se-Wholesale OEM/ODM GaN-Baseddepitaxial kuma-Sic Substrates 4′′, Sigxila ekwakheni uhlobo lwethu futhi sihlanganiswe nemishini eminingi yokuveza enolwazi kanye nekhwalithi ephezulu. Izimpahla zethu okufanele ube nazo.
Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo nezixazululo zethu kanye nokulungisa. Umsebenzi wethu kufanele kube ukukhiqiza imikhiqizo nezixazululo eziqanjiwe kumakhasimende sisebenzisa isipiliyoni sokusebenza esihle kakhuluIzingxenyana ze-China GaN kanye nefilimu ye-GaN, Njengoba inezinhlobonhlobo eziningi, ikhwalithi enhle, amanani afanelekile kanye nemiklamo enesitayela, izimpahla zethu zisetshenziswa kakhulu ebuhleni nakwezinye izimboni. Imikhiqizo nezixazululo zethu ziyaqashelwa futhi ziyathenjwa kabanzi ngabasebenzisi futhi zingahlangabezana nezidingo zomnotho nezenhlalo ezishintsha njalo.

Izithwali ze-graphite ze-SiC zokumboza i-MOCVD Wafer

Zonke izisusa zethu zenziwe nge-graphite enamandla amakhulu e-isostatic. Zuza ekuhlanzekeni okuphezulu kwama-graphite ethu - aklanyelwe ikakhulukazi izinqubo eziyinselele njenge-epitaxy, ukukhulisa ikristalu, ukufakelwa kwe-ion kanye nokuqoshwa kwe-plasma, kanye nokukhiqizwa kwama-chip e-LED.

Incazelo Yomkhiqizo
Ukufakwa kwe-SiC kwe-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye ehlanzekile kakhulu kanye nokumelana nomoya oxidating.
I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Isembozo singasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

Inhlanganisela

Izithwali ze-graphite ze-SiC zokumboza i-MOCVD Wafer

Izinzuzo ezikhethekile zama-susceptor ethu e-graphite ambozwe yi-SiC zifaka phakathi ubumsulwa obuphezulu kakhulu, ukugqoka okufanayo kanye nokuphila kahle kwenkonzo. Futhi anokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

Sigcina ukubekezelelana okusondelene kakhulu lapho sisebenzisa i-SiC coating, sisebenzisa imishini enembile kakhulu ukuqinisekisa iphrofayili efanayo ye-susceptor. Siphinde sikhiqize izinto ezinezakhiwo zokumelana kagesi ezifanele ukusetshenziswa ezinhlelweni ezifudunyezwayo. Zonke izingxenye eziqediwe ziza nesitifiketi sokuthobela imithetho esihlanzekile nesinobukhulu.

Isicelo:

Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
· Ingasetshenziswa ngaphansi kwe-Oxidizing AtmosphereIzakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

Empeleni kuyindlela enhle yokuthuthukisa imikhiqizo nezixazululo zethu kanye nokulungisa. Umsebenzi wethu kufanele kube ukukhiqiza imikhiqizo nezixazululo eziqanjiwe kumakhasimende sisebenzisa isipiliyoni esimangalisayo sokusebenza se-Wholesale OEM/ODM GaN-Baseddepitaxial kuma-Sic Substrates 4′′, Sigxila ekwakheni uhlobo lwethu futhi sihlanganiswe nemishini eminingi yokuveza enolwazi kanye nekhwalithi ephezulu. Izimpahla zethu okufanele ube nazo.
I-OEM/ODM Ethengiswa NgobuningiIzingxenyana ze-China GaN kanye nefilimu ye-GaN, Njengoba inezinhlobonhlobo eziningi, ikhwalithi enhle, amanani afanelekile kanye nemiklamo enesitayela, izimpahla zethu zisetshenziswa kakhulu ebuhleni nakwezinye izimboni. Imikhiqizo nezixazululo zethu ziyaqashelwa futhi ziyathenjwa kabanzi ngabasebenzisi futhi zingahlangabezana nezidingo zomnotho nezenhlalo ezishintsha njalo.