2 Imiphumela yokuhlola kanye nengxoxo
2.1Isendlalelo se-Epitaxialukujiya kanye nokufana
Ubukhulu besendlalelo se-Epitaxial, ukuhlushwa kwe-doping kanye nokufana kungenye yezinkomba eziyinhloko zokwahlulela ikhwalithi yama-wafer epitaxial. Ukuhlushwa kwe-doping kanye nokufana ngaphakathi kwe-wafer kuyisihluthulelo sokuqinisekisa ukusebenza kanye nokuvumelana kweAmadivayisi kagesi e-SiC, kanye nobukhulu besendlalelo se-epitaxial kanye nokufana kokuhlushwa kwe-doping nakho kuyizisekelo ezibalulekile zokulinganisa ikhono lenqubo yemishini ye-epitaxial.
Umfanekiso 3 ukhombisa ukufana kobukhulu kanye nejika lokusabalalisa elingu-150 mm kanye no-200 mmAma-wafer e-SiC epitaxial. Kungabonakala esithombeni ukuthi ijika lokusabalalisa ubukhulu bengqimba ye-epitaxial lilingana nendawo ephakathi ye-wafer. Isikhathi senqubo ye-epitaxial singama-600s, ubukhulu bengqimba ye-epitaxial obujwayelekile be-wafer ye-epitaxial engu-150mm bungu-10.89 um, kanti ukufana kobukhulu kungu-1.05%. Ngokubala, izinga lokukhula kwe-epitaxial lingu-65.3 um/h, okuyizinga lenqubo ejwayelekile esheshayo ye-epitaxial. Ngaphansi kwesikhathi esifanayo senqubo ye-epitaxial, ubukhulu bengqimba ye-epitaxial ye-wafer ye-epitaxial engu-200 mm bungu-10.10 um, ukufana kobukhulu kungaphakathi kuka-1.36%, kanti izinga lokukhula lilonke lingu-60.60 um/h, elingaphansi kancane kunezinga lokukhula kwe-epitaxial elingu-150 mm. Lokhu kungenxa yokuthi kukhona ukulahlekelwa okusobala endleleni lapho umthombo we-silicon kanye nomthombo wekhabhoni kugeleza kusuka phezulu kwegumbi lokusabela ngokusebenzisa ubuso be-wafer kuya phansi kwegumbi lokusabela, futhi indawo ye-wafer engu-200 mm inkulu kune-150 mm. Igesi igeleza ebusweni be-wafer engu-200 mm ibanga elide, futhi igesi yomthombo esetshenziswa endleleni iyanda. Ngaphansi kwesimo sokuthi i-wafer iqhubeka nokujikeleza, ubukhulu bengqimba ye-epitaxial buncane, ngakho-ke izinga lokukhula lihamba kancane. Sekukonke, ukufana kobukhulu be-wafers ye-epitaxial engu-150 mm kanye ne-200 mm kuhle kakhulu, futhi ikhono lenqubo yemishini lingahlangabezana nezidingo zamadivayisi asezingeni eliphezulu.
2.2 Ukuhlushwa kanye nokufana kwe-doping yengqimba ye-Epitaxial
Umfanekiso 4 ukhombisa ukufana kokuhlushwa kwe-doping kanye nokusatshalaliswa kwejika elingu-150 mm kanye no-200 mmAma-wafer e-SiC epitaxialNjengoba kungabonakala esithombeni, ijika lokusabalala kokuhlushwa ku-wafer ye-epitaxial linokulingana okusobala maqondana nesikhungo se-wafer. Ukufana kokuhlushwa ... ngoba izinga "lokuphelelwa yisikhathi" komthombo wekhabhoni (C2H4) liphakeme kunelomthombo we-silicon (TCS), lapho i-wafer ijikeleza, i-C/Si yangempela ebusweni be-wafer iyancipha kancane kancane kusukela emaphethelweni kuya enkabeni (umthombo wekhabhoni ophakathi nendawo uncane), ngokusho "kwethiyori yesikhundla sokuncintisana" ye-C ne-N, ukugcwala kwe-doping maphakathi ne-wafer kwehla kancane kancane kuya emaphethelweni, ukuze kutholakale ukufana okuhle kakhulu kokugcwala, umphetho we-N2 wengezwa njengesinxephezelo ngesikhathi senqubo ye-epitaxial ukuze kuncishiswe ukwehla kokugcwala kwe-doping kusuka enkabeni kuya emaphethelweni, ukuze ijika lokugcina lokugcwala kwe-doping liveze ukuma kwe-"W".
2.3 Amaphutha wezendlalelo ze-Epitaxial
Ngaphezu kobukhulu kanye nokuhlushwa kwe-doping, izinga lokulawulwa kokukhubazeka kwengqimba ye-epitaxial liyipharamitha eyinhloko yokulinganisa ikhwalithi yama-wafer epitaxial kanye nesibonakaliso esibalulekile sekhono lenqubo yemishini ye-epitaxial. Nakuba i-SBD ne-MOSFET zinezidingo ezihlukile zamaphutha, amaphutha okubonakala okusobala kakhulu njengokukhubazeka kokuwa, amaphutha kanxantathu, amaphutha kanqante, amaphutha e-comet, njll. achazwa njengamaphutha okubulala amadivayisi e-SBD ne-MOSFET. Amathuba okwehluleka kwama-chips aqukethe la maphutha aphezulu, ngakho-ke ukulawula inani lamaphutha okubulala kubaluleke kakhulu ekuthuthukiseni isivuno se-chip nokunciphisa izindleko. Isibalo 5 sibonisa ukusatshalaliswa kwamaphutha okubulala ama-wafer e-epitaxial angu-150 mm kanye no-200 mm SiC. Ngaphansi kwesimo sokuthi akukho ukungalingani okusobala ku-C/Si ratio, amaphutha kanqante kanye namaphutha e-comet angasuswa ngokuyisisekelo, kuyilapho amaphutha okuwa kanye namaphutha kanxantathu kuhlobene nokulawulwa kokuhlanzeka ngesikhathi sokusebenza kwemishini ye-epitaxial, izinga lokungcola kwezingxenye ze-graphite ekamelweni lokusabela, kanye nekhwalithi ye-substrate. Kusukela kuThebula 2, kungabonakala ukuthi ubuningi besici esibulalayo sama-wafer epitaxial angu-150 mm kanye no-200 mm bungalawulwa ngaphakathi kwezinhlayiya ezingu-0.3/cm2, okuyizinga elihle kakhulu lohlobo olufanayo lwemishini. Izinga lokulawula ubuningi besici esibulalayo sama-wafer epitaxial angu-150 mm lingcono kunele-wafer epitaxial engu-200 mm. Lokhu kungenxa yokuthi inqubo yokulungiselela i-substrate engu-150 mm ivuthiwe kakhulu kuneye-200 mm, ikhwalithi ye-substrate ingcono, kanti izinga lokulawula ukungcola kwegumbi lokusabela le-graphite elingu-150 mm lingcono.
2.4 Ubulukhuni bomphezulu we-wafer ye-Epitaxial
Isithombe 6 sibonisa izithombe ze-AFM zobuso bama-wafer epitaxial angu-150 mm kanye no-200 mm SiC. Kungabonakala esithombeni ukuthi impande yobuso isilinganiso sobulukhuni besikwele i-Ra yama-wafer epitaxial angu-150 mm kanye no-200 mm ingu-0.129 nm kanye no-0.113 nm ngokulandelana, kanti ubuso bengqimba ye-epitaxial bubushelelezi ngaphandle kwento esobala yokuhlanganisa ama-macro-step. Lesi simo sibonisa ukuthi ukukhula kwengqimba ye-epitaxial kuhlala kugcina imodi yokukhula kokugeleza kwesinyathelo phakathi nenqubo yonke ye-epitaxial, futhi akukho ukuhlanganiswa kwesinyathelo okwenzekayo. Kungabonakala ukuthi ngokusebenzisa inqubo yokukhula ye-epitaxial elungiselelwe, izingqimba ze-epitaxial ezibushelelezi zingatholakala kuma-substrate angama-150 mm kanye no-200 mm angama-low-angle.
3 Isiphetho
Ama-wafer epitaxial angu-150 mm no-200 mm 4H-SiC alungiselelwe ngempumelelo ezindaweni zasekhaya kusetshenziswa imishini yokukhula ye-epitaxial engu-200 mm SiC epitaxial eyenzelwe wena, futhi inqubo ye-epitaxial ehambelanayo efanelekile ku-150 mm no-200 mm yathuthukiswa. Izinga lokukhula kwe-epitaxial lingaba ngaphezu kuka-60 μm/h. Ngenkathi kuhlangatshezwana nesidingo se-epitaxy esheshayo, ikhwalithi ye-epitaxial wafer ihle kakhulu. Ukufana kobukhulu bama-wafer epitaxial angu-150 mm no-200 mm SiC epitaxial kungalawulwa ngaphakathi kuka-1.5%, ukufana kokuhlushwa kungaphansi kuka-3%, ubuningi bokukhubazeka okubulalayo bungaphansi kwezinhlayiya ezingu-0.3/cm2, kanye ne-epitaxial surface roughness root mean square Ra ingaphansi kuka-0.15 nm. Izinkomba zenqubo eyinhloko yama-wafer epitaxial zisezingeni eliphezulu embonini.
Umthombo: Imishini Ekhethekile Yemboni Ye-elekthronikhi
Umbhali: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(I-48th Research Institute of China Electronics Technology Group Corporation, eChangsha, eHunan 410111)
Isikhathi sokuthunyelwe: Septhemba-04-2024