Siphinde sigxile ekuthuthukiseni ukuphathwa kwezinto kanye nohlelo lwe-QC ukuze sikwazi ukugcina inzuzo enkulu ebhizinisini elincintisana kakhulu le-Personlized Products China Silicon Carbon Crucible for Ferrous and Non-Ferrous Alloys, Ukuze sithole intuthuko eqhubekayo, enenzuzo, futhi eqhubekayo ngokuthola inzuzo yokuncintisana, nangokukhulisa njalo intengo engeziwe kubanikazi bamasheya bethu kanye nabasebenzi bethu.
Sigxile futhi ekuthuthukiseni ukuphathwa kwezinto kanye nohlelo lwe-QC ukuze sikwazi ukugcina inzuzo enkulu ebhizinisini elincintisana kakhuluIsitsha Sokubhoboza Esithambile saseShayina iSilica Graphite, I-Graphite Foundry Crucible, Inkampani yethu ingumhlinzeki wamazwe ngamazwe walolu hlobo lwezimpahla. Sihlinzeka ngokukhethwa okumangalisayo kwezimpahla ezisezingeni eliphezulu. Umgomo wethu ukukujabulisa ngeqoqo lethu elihlukile lezinto eziqaphile ngenkathi sinikeza inani kanye nensizakalo enhle kakhulu. Umsebenzi wethu ulula: Ukuhlinzeka ngezinto ezinhle kakhulu kanye nensizakalo kumakhasimende ethu ngamanani aphansi kakhulu.
Izinhlanganisela zekhabhoni/khabhoni(okuzobizwa ngokuthi “lapha"C/C noma i-CFC") uhlobo lwezinto ezihlanganisiwe ezisekelwe ku-carbon futhi ziqiniswa yi-carbon fiber kanye nemikhiqizo yazo (i-carbon fiber preform). Inamandla okuqina kwe-carbon kanye namandla aphezulu e-carbon fiber. Inezici ezinhle zomshini, ukumelana nokushisa, ukumelana nokugqwala, ukucindezelwa kokungqubuzana kanye nezici zokuqhuba ukushisa kanye nogesi.
I-CVD-SiCUkumboza kunezici zesakhiwo esifanayo, izinto ezihlanganisiwe, ukumelana nokushisa okuphezulu, ukumelana nokushiswa kwe-oxidation, ubumsulwa obuphezulu, ukumelana ne-asidi ne-alkali kanye ne-reagent ephilayo, enezakhiwo zomzimba nezimakhemikhali ezizinzile.
Uma kuqhathaniswa nezinto ze-graphite ezihlanzekile kakhulu, i-graphite iqala uku-oxidation ku-400C, okuzobangela ukulahlekelwa yimpuphu ngenxa yoku-oxidation, okuzoholela ekungcolisweni kwemvelo kumadivayisi angaphandle kanye namakamelo okuhlanza, futhi kwandise ukungcola kwendawo ehlanzekile kakhulu.
Kodwa-ke, ukugqoka kwe-SiC kungagcina ukuzinza ngokomzimba nangokwekhemikhali kuma-degrees angu-1600, Kusetshenziswa kabanzi embonini yanamuhla, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC. I-SIC eyakhiwe iboshwe ngokuqinile esisekelweni se-graphite, inikeza isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite bube buncane, bungabi ne-Porosity, bumelana nokushisa okuphezulu, bumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.
2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
Imininingwane Eyinhloko Yezimbozo ze-CVD-SIC:
| I-SiC-CVD | ||
| Ubuningi | (g/cc)
| 3.21 |
| Amandla okugobeka | (i-Mpa)
| 470 |
| Ukwanda kokushisa | (10-6/K) | 4
|
| Ukuqhuba kwe-thermal | (W/mK) | 300
|
