1. Fasahar doping foda ta silicon carbide
Yin amfani da sinadarin Ce mai kyau a cikin foda na silicon carbide zai iya haifar da ci gaban da ya dace na siffar lu'ulu'u guda ɗaya na 4H-SiC. Kwarewa ta aiki ta nuna cewa yin amfani da sinadarin Ce a cikin kayan foda na iya ƙara yawan ci gaban lu'ulu'u na silicon carbide, yana sa lu'ulu'u su girma da sauri. Ana iya sarrafa yanayin ci gaban lu'ulu'u na silicon carbide, wanda hakan ke sa alkiblar ci gaban lu'ulu'u ta zama iri ɗaya kuma ta yau da kullun. Yana hana samar da ƙazanta a cikin lu'ulu'u, rage samuwar lahani, da kuma sauƙaƙa samun lu'ulu'u masu siffar lu'ulu'u guda ɗaya da lu'ulu'u masu inganci. Yana iya hana tsatsa a bayan lu'ulu'u kuma yana ƙara yawan lu'ulu'u guda ɗaya na lu'ulu'u.
2. Fasahar sarrafa yanayin zafi na axial da radial
Tsarin zafin jiki na axial yana shafar siffar girma da ingancin girma na kristal. Ƙaramin canjin zafin jiki zai haifar da bayyanar heterocrystals yayin tsarin girma na kristal kuma yana shafar yawan jigilar abubuwan gas, wanda ke haifar da raguwar ƙimar girma na kristal. Daidaitattun yanayin zafin jiki na axial da radial suna sauƙaƙa saurin girma na lu'ulu'u na SiC kuma suna kiyaye daidaiton ingancin kristal.
3. Fasahar sarrafa nakasasshen jirgin sama (BPD) ta asali
Babban dalilin samuwar lahani na BPD shine cewa matsin lamba a cikin lu'ulu'u ya wuce matsin lamba mai mahimmanci na yankewaGilashin SiC, wanda ke haifar da kunna tsarin zamewa. Saboda BPD yana daidai da alkiblar girman kristal, galibi ana samar da shi ne a lokacin tsarin girman kristal da kuma tsarin sanyaya kristal daga baya.
4. Tsarin rabon sassan iskar gas da fasahar sarrafawa
A cikin tsarin girma na lu'ulu'u, ƙara yawan carbon-silicon da rabon abubuwan da ke cikin iskar gas a cikin yanayin girma shine ma'auni mai tasiri don cimma ci gaban da ya dace na siffar lu'ulu'u ɗaya. Saboda babban rabon carbon-silicon zai iya rage yawan haɗuwar matakai da kuma kiyaye gadon bayanai game da girma akan saman lu'ulu'u iri, yana iya danne yawan bambancin yanayi.
5. Fasahar sarrafa damuwa mai ƙarancin ƙarfi
A lokacin tsarin girma na kristal, kasancewar damuwa na iya haifar da jiragen kristal na cikiSiClanƙwasawa, wanda ke haifar da rashin ingancin lu'ulu'u har ma da tsagewar lu'ulu'u. Bugu da ƙari, babban damuwa na iya haifar da ƙaruwar nakasa a cikin matakin farko na wafer. Waɗannan lahani na iya shiga cikin layin epitaxial yayin aikin epitaxial, wanda ke shafar aikin na'urar a matakin ƙarshe.
Ga hanyoyi da dama don inganta tsarin rage damuwa a cikin lu'ulu'u:
1. Daidaita rarraba filin zafin jiki da sigogin tsari don kunna SiC guda ɗayagirma na lu'ulu'udon ci gaba a ƙarƙashin yanayi kusa da daidaito gwargwadon yiwuwa.
2. Inganta tsarin da siffar da aka yi amfani da shi a cikin tukunyar don ba da damar lu'ulu'u ya girma cikin 'yanci gwargwadon iko a cikin yanayin da ba a iyakance ba.
3. Dangane da daidaita kristal iri, gyara tsarin gyarawa don rage bambancin ma'aunin faɗaɗa zafi tsakanin kristal iri da mai riƙe graphite yayin dumamawa, ta haka rage damuwa ta ciki a cikin kristal guda ɗaya na 4H-SiC. Hanya ta gama gari ita ce a bar tazara ta 2 mm tsakanin kristal iri da mai riƙe graphite.
4. Gyara tsarin ƙara hasken kristal ta hanyar aiwatar da ƙara hasken da aka sanyaya ta hanyar murhu. Daidaita zafin jiki da tsawon lokacin ƙara hasken don fitar da damuwa ta ciki gaba ɗaya a cikin gilashin.
Idan aka duba gaba, fasahar shirya lu'ulu'u guda ɗaya mai inganci ta silicon carbide (SiC) za ta bunƙasa ta hanyoyi da dama:
1. Ƙara girman wafer: Diamita na lu'ulu'u na SiC ya ci gaba daga mililita na farko zuwa wafers na yanzu mai inci 6, inci 8, har ma da manyan wafers masu inci 12. Shirya manyan lu'ulu'u na SiC yana haɓaka ingancin samarwa, yana rage farashi, kuma yana biyan buƙatun na'urori masu ƙarfi.
2. Inganta ingancin lu'ulu'u: lu'ulu'u masu inganci na SiC suna da matuƙar muhimmanci ga na'urori masu aiki mai kyau. Duk da cewa an sami ci gaba mai yawa, lahani kamar ƙananan bututu, gurɓatattun abubuwa, da ƙazanta har yanzu suna ci gaba, wanda ke shafar aikin na'urar da amincinta.
3. Rage farashin samarwa: Babban farashin shirya lu'ulu'u na SiC yana iyakance amfaninsa a wasu fannoni. Ana iya cimma rage farashi ta hanyar inganta hanyoyin girma, inganta ingancin samarwa, da rage kashe kuɗin kayan masarufi.
4. Aiwatar da masana'antu masu wayo: Tare da ci gaba a fannin AI da manyan bayanai, fasahar ci gaban lu'ulu'u ta SiC za ta ƙara rungumar hankali. Kulawa da sarrafawa ta lokaci-lokaci ta hanyar na'urori masu auna firikwensin da tsarin sarrafawa ta atomatik suna haɓaka kwanciyar hankali da ikon sarrafawa. A lokaci guda, amfani da manyan bayanai na nazarin bayanai yana inganta bayanan ci gaba, ta haka yana inganta ingancin lu'ulu'u da ingancin samarwa.
Fasahar shiri ta lu'ulu'u masu inganci na silicon carbide guda ɗaya tana ɗaya daga cikin wuraren da ake yawan samun ci gaba a binciken kayan semiconductor. Tare da ci gaba da ci gaban fasaha, fasahar haɓaka lu'ulu'u ta silicon carbide za ta ci gaba da haɓakawa da haɓakawa, tana samar da tushe mai ƙarfi don amfani da silicon carbide a cikin yanayin zafi mai yawa, mita mai yawa, ƙarfin lantarki mai yawa da sauran fannoni.
Lokacin Saƙo: Yuli-10-2025