Yintoni iTekhnoloji enxulumene nokukhula kweekristale zeSilicon Carbide (SiC)

1. Itekhnoloji yokudaya i-silicon carbide powder
Ukufaka isixa esifanelekileyo se-Ce element kwi-silicon carbide powder kunokufezekisa isiphumo sokukhula okuzinzileyo kwe-single crystal form ye-4H-SiC. Amava asebenzayo abonise ukuba ukufaka i-doping yezinto ze-Ce kwizixhobo ze-powder kunokunyusa izinga lokukhula kweekristale ze-silicon carbide, okwenza iikristale zikhule ngokukhawuleza. Indlela i-silicon carbide ebekwe ngayo ingalawulwa, okwenza indlela yokukhula kwekristale ifane ngakumbi kwaye ihlale injalo. Kuthintela ukuveliswa kokungcola kwiikristale, kunciphise ukwakheka kweziphene, kwaye kwenze kube lula ukufumana iikristale ze-single-crystal kunye neekristale ezikumgangatho ophezulu. Kungathintela ukubola ngasemva kwekristale kwaye kwandise izinga le-single crystal yekristale.

2. Itekhnoloji yokulawula i-gradient yentsimi yobushushu be-Axial kunye ne-radial
I-axial temperature gradient ichaphazela kakhulu indlela yokukhula kwekristale kunye nokusebenza kakuhle kokukhula kwekristale. I-gradient encinci kakhulu yobushushu iya kukhokelela ekubonakaleni kwee-heterocrystals ngexesha lenkqubo yokukhula kwekristale kwaye ikwachaphazela nesantya sokuthuthwa kwezinto ezinegesi, nto leyo ekhokelela ekwehleni kwesantya sokukhula kwekristale. I-axial temperature gradients ezifanelekileyo kunye ne-radial temperature zinceda ekukhuleni ngokukhawuleza kweekristale zeSiC kwaye zigcine uzinzo lomgangatho wekristale.

3. Iteknoloji yolawulo lwe-Basis plane dislocation (BPD)
Isizathu esiphambili sokwakheka kweziphene ze-BPD kukuba uxinzelelo lwe-shear kwikristale ludlula uxinzelelo olubalulekileyo lwe-shearIkristale yeSiC, okukhokelela ekusebenzeni kwenkqubo yokutyibilika. Ngenxa yokuba i-BPD ihambelana ngqo necala lokukhula kwekristale, iveliswa ikakhulu ngexesha lenkqubo yokukhula kwekristale kunye nenkqubo yokupholisa kamva kwekristale.

4. Ulawulo kunye neteknoloji yokulawula umlinganiselo wecandelo legesi
Kwinkqubo yokukhula kwekristale, ukwandisa umlinganiselo wekhabhoni-silicon kunye nomlinganiselo wecandelo legesi kwindawo yokukhula yindlela esebenzayo yokufikelela ekukhuleni okuzinzileyo kwefom enye yekristale. Ngenxa yokuba umlinganiselo ophezulu wekhabhoni-silicon unokunciphisa ukuhlangana okukhulu kwamanyathelo kwaye ugcine ilifa lolwazi lokukhula kumphezulu wekristale yembewu, inokuthintela i-polymorphism.

5. Iteknoloji yokulawula uxinzelelo oluphantsi
Ngexesha lenkqubo yokukhula kwekristale, ukubakho koxinzelelo kunokubangela iiplanethi zekristale zangaphakathiI-SiCukugoba, nto leyo ebangela umgangatho ophantsi wekristale kunye nokuqhekeka kwekristale. Ngaphezu koko, uxinzelelo olukhulu lunokubangela ukwanda kokuqhekeka kwisiseko se-wafer. Ezi ziphene zinokungena kumaleko we-epitaxial ngexesha lenkqubo ye-epitaxial, nto leyo echaphazela kakhulu ukusebenza kwesixhobo kwinqanaba elilandelayo.

Nazi iindlela ezininzi zokuphucula inkqubo yokunciphisa uxinzelelo kwikristale:

1. Lungisa usasazo lwentsimi yobushushu kunye neeparamitha zenkqubo ukuze kusebenze iSiC enyeukukhula kwekristaleukuqhubeka phantsi kweemeko ezikufutshane nokulingana kangangoko kunokwenzeka.

2. Lungiselela ulwakhiwo kunye nemilo enokubethelelwa ukuze ikristale ikhule ngokukhululekileyo kangangoko kwimeko engenamida.

3. Ngokuphathelele ukulungiswa kwekristale yembewu, tshintsha inkqubo yokulungiswa ukuze unciphise umahluko kwii-coefficients zokwandiswa kobushushu phakathi kwekristale yembewu kunye nesiphathi segrafiti ngexesha lokufudumeza, ngaloo ndlela unciphise uxinzelelo lwangaphakathi ngaphakathi kwekristale enye ye-4H-SiC. Indlela eqhelekileyo kukushiya umsantsa we-2 mm phakathi kwekristale yembewu kunye nesiphathi segrafiti.

4. Guqula inkqubo yokuqhoboshela ikristale ngokusebenzisa ukuqhoboshela i-oven kwi-crystal. Lungisa ubushushu kunye nobude bexesha lokuqhoboshela ukuze ukhulule ngokupheleleyo uxinzelelo lwangaphakathi kwikristale.

Ukujonga phambili, iteknoloji yokulungiselela i-silicon carbide (SiC) single crystal ekumgangatho ophezulu iya kuphuhliswa kwiindlela ezahlukeneyo ezibalulekileyo:

1. Ukwandisa ubungakanani be-wafer: ‌ Ububanzi bekristale yeSiC buqhubekile ukusuka kwiimilimitha zokuqala ukuya kwii-wafers zangoku eziyi-6-intshi, eziyi-8-intshi, kunye nezinkulu ngakumbi eziyi-12-intshi. Ukulungiselela iikristale ezinkulu zeSiC kuphucula ukusebenza kakuhle kwemveliso, kunciphisa iindleko, kwaye kuhlangabezana neemfuno zezixhobo ezinamandla aphezulu.

2. Ukuphucula umgangatho wekristale: Iikristale zeSiC ezikumgangatho ophezulu zibalulekile kwizixhobo ezisebenza kakuhle. Nangona kwenziwe inkqubela phambili enkulu, iziphene ezifana nee-micropipes, ukudilika, kunye nokungcola kusaqhubeka, okuchaphazela ukusebenza kwesixhobo kunye nokuthembeka kwaso.

3. Ukunciphisa iindleko zemveliso: Iindleko eziphezulu zokulungiselela i-SiC crystal zithintela ukusetyenziswa kwayo kwiindawo ezithile. Ukunciphisa iindleko kunokufezekiswa ngokuphucula iinkqubo zokukhula, ukuphucula ukusebenza kakuhle kwemveliso, kunye nokunciphisa iindleko zezinto eziluhlaza.

4. Ukuphumeza imveliso ekrelekrele: Ngenkqubela phambili kwi-AI kunye ne-big data, iteknoloji yokukhula kwekristale ye-SiC iya kwamkela ngakumbi ubukrelekrele. Ukubeka esweni nokulawula ngexesha langempela ngokusebenzisa izinzwa kunye neenkqubo zolawulo oluzenzekelayo kuphucula uzinzo lwenkqubo kunye nolawulo. Kwangaxeshanye, ukusebenzisa uhlalutyo lwedatha enkulu kuphucula idatha yokukhula, ngaloo ndlela kuphucula umgangatho wekristale kunye nokusebenza kakuhle kwemveliso.

Itekhnoloji yokulungiselela iikristale ze-silicon carbide ezikumgangatho ophezulu yenye yezona ndawo ziphambili kuphando lwezinto ze-semiconductor. Ngokuqhubeka kweteknoloji, itekhnoloji yokukhula kwekristale ye-silicon carbide iya kuqhubeka nokuphuhliswa nokuphuculwa, ibonelela ngesiseko esiqinileyo sokusetyenziswa kwe-silicon carbide kwiindawo ezinobushushu obuphezulu, ezisebenzisa rhoqo, ezinamandla aphezulu kunye nezinye iindawo.