1. Ubuchwepheshe bokusebenzisa i-silicon carbide powder doping
Ukufaka i-doping enanini elifanele le-Ce element ku-silicon carbide powder kungafeza umphumela wokukhula okuzinzile kwe-single crystal form ye-4H-SiC. Okuhlangenwe nakho okusebenzayo kubonise ukuthi ukufaka i-doping yezinto ze-Ce ezintweni ze-powder kungakhuphula izinga lokukhula kwamakristalu e-silicon carbide, okwenza amakristalu akhule ngokushesha. Ukuqondiswa kwe-silicon carbide kungalawulwa, okwenza indlela yokukhula kwe-crystal ifane futhi ijwayelekile. Kuvimbela ukukhiqizwa kokungcola kumakristalu, kunciphise ukwakheka kwamaphutha, futhi kwenze kube lula ukuthola amakristalu e-single-crystal kanye namakristalu ekhwalithi ephezulu. Kungavimbela ukugqwala ngemuva kwekristalu futhi kwandise izinga le-single crystal lekristalu.
2. Ubuchwepheshe bokulawula i-gradient yensimu yokushisa kwe-Axial kanye ne-radial
I-gradient yokushisa ye-axial ithinta kakhulu isimo sokukhula kwekristalu kanye nokusebenza kahle kokukhula kwekristalu. I-gradient yokushisa encane kakhulu izoholela ekubonakaleni kwamakristalu e-hetero ngesikhathi senqubo yokukhula kwekristalu futhi ithinte nezinga lokuthuthwa kwezinto ezisebenzisa igesi, okuholela ekwehleni kwesilinganiso sokukhula kwekristalu. I-gradient yokushisa ye-axial ne-radial efanele yenza kube lula ukukhula okusheshayo kwamakristalu e-SiC futhi igcine ukuzinza kwekhwalithi yekristalu.
3. Ubuchwepheshe bokulawula i-Basis plane dislocation (BPD)
Imbangela eyinhloko yokwakheka kwesici se-BPD ukuthi ukucindezeleka kwe-shear ku-crystal kudlula ukucindezeleka kwe-shear okubalulekile kwe-Ikristalu le-SiC, okuholela ekusebenzeni kwesistimu yokushelela. Ngenxa yokuthi i-BPD iqonde ngqo esiqondisweni sokukhula kwekristalu, ikhiqizwa kakhulu ngesikhathi senqubo yokukhula kwekristalu kanye nenqubo yokupholisa kwekristalu kamuva.
4. Ukulawulwa kwesilinganiso sengxenye yegesi kanye nobuchwepheshe bokulawula
Enqubweni yokukhula kwekristalu, ukwandisa isilinganiso sekhabhoni-silicon kanye nesilinganiso sengxenye yegesi endaweni yokukhula kuyisinyathelo esiphumelelayo sokufeza ukukhula okuzinzile kwesimo sekristalu esisodwa. Ngenxa yokuthi isilinganiso esiphezulu sekhabhoni-silicon singanciphisa ukuhlangana okukhulu kwezinyathelo futhi silondoloze ifa lolwazi lokukhula ebusweni bekristalu yembewu, kungacindezela i-polymorphism.
5. Ubuchwepheshe bokulawula ukucindezeleka okuphansi
Ngesikhathi senqubo yokukhula kwekristalu, ukuba khona kokucindezeleka kungabangela izindiza zekristalu zangaphakathi zeI-SiCukugoba, okuholela ekhwalithini ephansi yekristalu kanye nokuqhekeka kwekristalu. Ngaphezu kwalokho, ukucindezeleka okukhulu kungaholela ekwandeni kokuhlukana endaweni eyisisekelo ye-wafer. Lawa maphutha angangena ungqimba lwe-epitaxial ngesikhathi senqubo ye-epitaxial, okuthinta kakhulu ukusebenza kwedivayisi esigabeni esilandelayo.
Nazi izindlela eziningana zokuthuthukisa inqubo yokunciphisa ukucindezeleka ngaphakathi kwekristalu:
1. Lungisa ukusatshalaliswa kwensimu yokushisa kanye namapharamitha enqubo ukuze unike amandla i-SiC eyodwaukukhula kwekristaluukuqhubeka ngaphansi kwezimo eziseduze nokulingana ngangokunokwenzeka.
2. Lungiselela isakhiwo nesimo se-crucible ukuze uvumele i-crystal ikhule ngokukhululeka ngangokunokwenzeka esimweni esingenamingcele.
3. Ngokuphathelene nokulungiswa kwekristalu yembewu, shintsha inqubo yokulungiswa ukuze unciphise umehluko kuma-coefficients okwandisa ukushisa phakathi kwekristalu yembewu kanye nesiphathi se-graphite ngesikhathi sokushisa, ngaleyo ndlela unciphise ukucindezeleka kwangaphakathi ngaphakathi kwekristalu eyodwa ye-4H-SiC. Indlela evamile ukushiya igebe elingu-2 mm phakathi kwekristalu yembewu kanye nesiphathi se-graphite.
4. Shintsha inqubo yokubopha ikristalu ngokusebenzisa i-annealing epholile esithandweni sekristalu. Lungisa izinga lokushisa lokubopha kanye nobude besikhathi ukuze ukhulule ngokuphelele ukucindezeleka kwangaphakathi ngaphakathi kwekristalu.
Uma sibheka phambili, ubuchwepheshe bokulungiselela i-silicon carbide (SiC) single crystal obusezingeni eliphezulu buzothuthuka ngezindlela eziningana ezibalulekile:
1. Ukwandisa usayizi we-wafer: Ububanzi bekristalu ye-SiC buthuthuke kusukela kumamilimitha okuqala kuya kuma-wafer amanje angu-6-intshi, angu-8-intshi, kanye namakhulu kakhulu angu-12-intshi. Ukulungiselela amakristalu amakhulu e-SiC kuthuthukisa ukusebenza kahle kokukhiqiza, kunciphisa izindleko, futhi kuhlangabezana nezidingo zamadivayisi anamandla amakhulu.
2. Ukuthuthukisa ikhwalithi yekristalu: Amakristalu e-SiC asezingeni eliphezulu abalulekile kumadivayisi asebenza kahle kakhulu. Nakuba kwenziwe intuthuko enkulu, amaphutha afana namapayipi amancane, ukudilika, kanye nokungcola kusaqhubeka, okuthinta ukusebenza kwedivayisi kanye nokuthembeka kwayo.
3. Ukunciphisa izindleko zokukhiqiza: Izindleko eziphakeme kakhulu zokulungiselela i-SiC crystal zikhawulela ukusetshenziswa kwayo emikhakheni ethile. Ukunciphisa izindleko kungatholakala ngokwenza ngcono izinqubo zokukhula, ukuthuthukisa ukusebenza kahle kokukhiqiza, kanye nokunciphisa izindleko zezinto zokusetshenziswa.
4. Ukusebenzisa ukukhiqiza okuhlakaniphile: Ngentuthuko ku-AI kanye ne-big data, ubuchwepheshe bokukhula kwe-SiC crystal buzokwamukela kakhulu ubuhlakani. Ukuqapha nokulawula ngesikhathi sangempela ngezinzwa kanye nezinhlelo zokulawula ezenzakalelayo kuthuthukisa ukuzinza kwenqubo kanye nokulawula. Ngesikhathi esifanayo, ukusebenzisa i-big data analytics kuthuthukisa idatha yokukhula, ngaleyo ndlela kuthuthukiswe ikhwalithi ye-crystal kanye nokusebenza kahle kokukhiqiza.
Ubuchwepheshe bokulungiselela amakristalu e-silicon carbide single asezingeni eliphezulu bungenye yezindawo ezithandwa kakhulu ocwaningweni lwezinto ze-semiconductor. Ngokuthuthuka okuqhubekayo kobuchwepheshe, ubuchwepheshe bokukhula kwekristalu ye-silicon carbide buzoqhubeka nokuthuthukiswa nokuthuthuka, buhlinzeke ngesisekelo esiqinile sokusetshenziswa kwe-silicon carbide ezinkambeni ezishisa kakhulu, ezivame kakhulu, ezinamandla aphezulu kanye neminye imikhakha.
Isikhathi sokuthunyelwe: Julayi-10-2025