2022 MOCVD Susceptor kiʻekiʻe kiʻekiʻe E kūʻai ma ka pūnaewele ma Kina, Sic Graphite epitaxy susceptors

Wehewehe Pōkole:

ʻO ka uhi ʻana o SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe kiʻekiʻe a me ke kūʻē ʻana i ka lewa oxidizing. Hoʻopili ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.


  • Kahi i hoʻomaka ai:Zhejiang, Kina (Mainland)
  • Helu Hoʻohālike:Helu Hoʻohālike:
  • Ka Hoʻohui Kemika:ʻO ka graphite i uhi ʻia me SiC
  • Ikaika kūlou:470Mpa
  • Ka hoʻokele wela:300 W/mK
  • ʻAno:Hemolele loa
  • Hana:CVD-SiC
  • Noi:Semiconductor / Photovoltaic
  • Ka nui o ka paʻa:3.21 g/cc
  • Hoʻonui wela:4 10-6/K
  • Lehu: <5ppm
  • Laʻana:Loaʻa
  • Kōmike HS:6903100000
  • Nā kikoʻī huahana

    Nā Lepili Huahana

    2022 MOCVD Susceptor kiʻekiʻe kiʻekiʻe E kūʻai ma ka pūnaewele ma Kina, Sic Graphite epitaxy susceptors,
    Nā substrates kākoʻo graphite, Nā mea hoʻopaʻa Graphite, Nā mea hoʻopaʻa Graphite no ka SiC Epitaxy, Nā mea hoʻopaʻa Graphite no Silicon, Nā mea hoʻopaʻa graphite me ka uhi silicon carbide, NĀ MEA HANA GRAPHITE I KA SEMICONDUCTOR Nā Pae Graphite Nā Mea Hoʻopaʻa Wafer Graphite Nā MEA HANA GRAPHITE MAʻEMAʻE KIʻEKIʻE Opto-electronics, nā kahua ukali no ka MOCVD, Nā kahua ukali graphite i uhi ʻia ʻo SiC no MOCVD,

    Wehewehe Huahana

    ʻO nā pono kūikawā o kā mākou mau mea hoʻopaʻa graphite i uhi ʻia me SiC e komo pū me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai kūpaʻa wela.

    ʻO ka uhi ʻana o SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe kiʻekiʻe a me ke kūʻē ʻana i ka lewa oxidizing.
    Hoʻopili ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

    ʻO ka mea hoʻopaʻa MOCVD uhi ʻia/uhi ʻia SiC

    Nā Hiʻohiʻona:
    · Kū'ē Kū'ē Wela Maika'i Loa
    · Kū'ē Kū'ē Kino Maika'i Loa
    · Kū'ē Kemika Maikaʻi Loa
    · Maʻemaʻe Kiʻekiʻe Loa
    · Loaʻa i ke ʻano paʻakikī
    · Hiki ke hoʻohana ʻia ma lalo o ka Oxidizing Atmosphere

     

    Nā Waiwai Maʻamau o ka Mea Graphite Base:

    Ka nui o ka ʻike ʻia: 1.85 g/cm3
    Ke kū'ē uila: 11 μΩm
    Ikaika Flexural: 49 MPa (500kgf/cm2)
    Paʻakikī Kahakai: 58
    Lehu: <5ppm
    Ka Hoʻokele Wela: 116 W/mK (100 kcal/mhr-℃)

    Hoʻolako ʻo Carbon i nā susceptors a me nā ʻāpana graphite no nā reactors epitaxy o kēia manawa. ʻO kā mākou waihona e komo pū ana me nā susceptors barela no nā ʻāpana i hoʻopili ʻia a me LPE, nā susceptors pancake no nā ʻāpana LPE, CSD, a me Gemini, a me nā susceptors wafer hoʻokahi no nā ʻāpana i hoʻopili ʻia a me ASM. Ma ka hoʻohui ʻana i nā hui ikaika me nā OEM alakaʻi, nā ʻike loea a me ka ʻike hana, hāʻawi ʻo SGL i ka hoʻolālā kūpono no kāu noi.

     


  • Ma mua:
  • Aʻe:

  • Kamaʻilio Pūnaewele WhatsApp!