Susceptor yo mu rwego rwo hejuru ya MOCVD yo mu 2022 igura kuri interineti mu Bushinwa, Sic Graphite epitaxy susceptors

Ibisobanuro bigufi:

Gusiga SiC kuri Graphite substrate yo gukoresha Semiconductor bitanga igice gifite ubuziranenge buhanitse kandi kirwanya ikirere gishyushya. CVD SiC cyangwa CVI SiC bishyirwa kuri Graphite y'ibice byoroshye cyangwa bigoye. Gusiga SiC bishobora gushyirwa mu bunini butandukanye no mu bice binini cyane.


  • Aho yaturutse:Zhejiang, Ubushinwa (Mainland)
  • Nimero y'icyitegererezo:Nimero y'icyitegererezo:
  • Ibikubiye mu ruganda:Grafiti itwikiriwe na SiC
  • Imbaraga zo koroha:470Mpa
  • Uburyo bwo gutwara ubushyuhe:300 W/mK
  • Ubwiza:Biratunganye cyane
  • Imikorere:CVD-SiC
  • Porogaramu:Semiconductor / Photovoltaic
  • Ubucucike:3.21 g/cc
  • Kwaguka k'ubushyuhe:4 10-6/K
  • Ivu: <5ppm
  • Urugero:Biraboneka
  • Kode y'Ubwishingizi bw'Ubuzima:6903100000
  • Ibisobanuro birambuye ku gicuruzwa

    Ibirango by'ibicuruzwa

    Susceptor yo mu rwego rwo hejuru ya MOCVD yo mu 2022 igura kuri interineti mu Bushinwa, Sic Graphite epitaxy susceptors,
    Ibikoresho bishyigikira grafiti, Ibikoresho byo gusukura grafiti, Ibikoresho bya Graphite bya SiC Epitaxy, Ibikoresho bya Graphite bya Silicon, Ibikoresho bya grafiti bifite irangi rya silicon carbide, IBIKORESHO BYA GRAPHITE MURI SEMICONDUCTOR Graphite Trays Graphite Wafer Susceptors HIGH PURITY GRAPHITE IBIKORESHO Opto-electronics, porogaramu za satelite za MOCVD, Platifomu za satelite za grafiti zitwikiriwe na SiC kuri MOCVD,

    Ibisobanuro by'igicuruzwa

    Ibyiza byihariye by’ibikoresho byacu bya grafiti bifite SiC birimo ubuziranenge bukabije, irangi rihuye neza kandi rimara igihe kirekire. Bifite kandi ubushobozi bwo kudakoresha imiti myinshi ndetse n’ubushyuhe burambye.

    Gusiga SiC kuri grafiti substrate yo gukoresha muri Semiconductor bitanga igice gifite ubuziranenge buhebuje kandi kirwanya ikirere gishyushya ogisijeni.
    CVD SiC cyangwa CVI SiC bishyirwa kuri Graphite y'ibice byoroshye cyangwa bigoye gushushanya. Gusiga bishobora gushyirwaho ubugari butandukanye no ku bice binini cyane.

    Igikoresho cya SiC/MOCVD Susceptor gitwikiriwe

    Ibiranga:
    · Ubudahangarwa bwiza cyane n'ubushyuhe
    · Ubudahangarwa bwiza cyane bwo guhangana n'ihungabana
    · Ubudahangarwa bwiza cyane bw'ibinyabutabire
    · Ubuziranenge Bukomeye cyane
    · Kuboneka mu buryo bugoye
    · Ikoreshwa munsi y'ikirere gitanga ogisijeni

     

    Imiterere isanzwe y'ibikoresho bya grafiti by'ibanze:

    Ubucucike bugaragara: 1.85 g/cm3
    Ubushobozi bwo guhangana n'amashanyarazi: 11 μΩm
    Ingufu zo Kongera Uburemere: 49 MPa (500kgf/cm2)
    Ubukomere bw'Inkombe: 58
    Ivu: <5ppm
    Ubushobozi bwo gutwara ubushyuhe: 116 W/mK (100 kcal/mhr-℃)

    Karuboni itanga ibikoresho bya susceptors n'ibice bya grafiti kuri reactors zose zigezweho za epitaxy. Porogaramu yacu irimo ibikoresho bya barrel susceptors ku bikoresho byakoreshejwe na LPE, ibikoresho bya pancake susceptors kuri LPE, CSD, na Gemini, hamwe n'ibikoresho bya single-wafer ku bikoresho byakoreshejwe na ASM. Mu guhuza ubufatanye bukomeye n'ibigo bikomeye bya OEM, ubumenyi mu bikoresho n'ubumenyi mu gukora, SGL itanga igishushanyo cyiza cy'ikoreshwa ryawe.

     


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