I-SUSceptor ye-MOCVD esezingeni eliphezulu ka-2022 Thenga ku-inthanethi eShayina, ama-SUSceptors e-Sic Graphite epitaxy

I-SUSceptor ye-MOCVD esezingeni eliphezulu ka-2022 Thenga ku-inthanethi eShayina, i-Sic Graphite epitaxy susceptors Isithombe Esifakiwe

Incazelo emfushane:

Ukufakwa kwe-SiC kwe-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye ehlanzekile kakhulu kanye nokumelana nomoya oxidative. I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Ukufakwa kwe-Coating kungasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

Indawo Yokuqala:E-Zhejiang, China (Mainland)

Inombolo Yemodeli:Inombolo Yemodeli:

Ukwakheka Kwamakhemikhali:I-graphite embozwe yi-SiC

Amandla okugobeka:470Mpa

Ukuqhuba kwe-thermal:300 W/mK

Ikhwalithi:Kuphelele

Umsebenzi:I-CVD-SiC

Isicelo:I-semiconductor/i-Photovoltaic

Ubuningi:3.21 g/cc

Ukwandiswa kokushisa:4 10-6/K

Umlotha: <5ppm

Isampula:Kuyatholakala

Ikhodi ye-HS:6903100000

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-2022 MOCVD Susceptor esezingeni eliphezulu Thenga ku-inthanethi eShayina, i-Sic Graphite epitaxy susceptors,
Izisekelo ze-Graphite, Ama-Graphite Susceptors, Ama-Graphite Susceptors e-SiC Epitaxy, Ama-Graphite Susceptors e-Silicon, Ama-susceptor e-Graphite ane-silicon carbide coating, AMATHULUZI E-GRAPHITE KU-SEMICONDUCTOR Ama-Graphite Trays Ama-Graphite Wafer Susceptors Ama-Graphite Purity HIGH Purity AMATHULUZI E-Opto-electronics, amapulatifomu esathelayithi e-MOCVD, Amapulatifomu esathelayithi e-graphite embozwe yi-SiC e-MOCVD,

Izinzuzo ezikhethekile zama-susceptor ethu e-graphite ambozwe yi-SiC zifaka phakathi ubumsulwa obuphezulu kakhulu, ukugqoka okufanayo kanye nokuphila kahle kwenkonzo. Futhi anokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

Ukufakwa kwe-SiC kwe-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye ehlanzekile kakhulu kanye nokumelana nomoya oxidating.
I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Isembozo singasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

I-SiC coating/i-MOCVD Susceptor embozwe nge-SiC

Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
· Ingasetshenziswa ngaphansi kwe-Oxidizing Atmosphere

Izakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

I-Carbon inikeza ama-susceptor kanye nezingxenye ze-graphite kuzo zonke iziqaphi zamanje ze-epitaxy. Iphothifoliyo yethu ifaka ama-susceptor ebharele amayunithi asetshenzisiwe kanye ne-LPE, ama-susceptor e-pancake amayunithi e-LPE, CSD, kanye ne-Gemini, kanye nama-susceptor e-single-wafer amayunithi asetshenzisiwe kanye ne-ASM. Ngokuhlanganisa ubudlelwano obuqinile nama-OEM ahamba phambili, ubuchwepheshe bezinto zokwakha kanye nolwazi lokukhiqiza, i-SGL inikeza umklamo ofanele kakhulu wohlelo lwakho lokusebenza.