Mkpuchi CVD

Mkpuchi CVD maka nhazi Semiconductor dị elu

E mepụtara ya maka gburugburu ebe mmepụta semiconductor dị mkpa, mkpuchi Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), na Pyrolytic Carbon (PyC) anyị na-enye ike kemịkalụ pụrụ iche, nkwụsi ike okpomọkụ dị oke elu, na ịdị ọcha dị oke elu (<5 ppm). Emebere ya iji chebe graphite na ihe ndị dị n'ime seramiiki dị elu site na plasma siri ike, gas usoro mmeghachi omume, na okirikiri okpomọkụ dị elu, mkpuchi anyị dị elu na-ebelata mmepụta ihe ma na-agbatị ndụ nke akụkụ ahụ nke ukwuu.Silicon/SiC Epitaxy, MOCVD, Plasma Etching, na Monocrystal Growthngwa.

Ọcha Dị Elu nke Ukwuu (< 5 ppm)

GDMS kwadoro na adịghị ọcha ígwè dị ala iji gbochie mmetọ wafer n'ime usoro dị oke mkpa.

Nguzogide Plasma na Gas Kachasị Elu

Ọdịdị kristal dị oke njọ na-echebe megide halogen plasma (CF₄, NF₃, Cl₂) na gas ndị na-emebi emebi.

Ndakọrịta Okpomọkụ Kachasị Mma

Njikwa CTE siri ike na-ewepụ obere mgbawa na mkpụchi mkpuchi n'okpuru oke okpomọkụ dị njọ.

Ụdị mkpuchi	Uru Teknụzụ Dị Mkpa	Ngwa Usoro Isi
Mkpuchi CVD SiC	Nnukwu ike okpomọkụ, ezigbo nguzogide mbuze plasma	Akọrọ Etch, Si Epitaxy, MOCVD, na Crystal Growth
Mkpuchi CVD TaC	Oke nguzogide okpomọkụ (>2000°C), ihe mgbochi nchara H₂/SiH₄	SiC Epitaxy, Otu-Kristal SiC PVT Uto
Mkpuchi PyC	Mkpuchi gas Hermetic, elu carbon anisotropic dị nro nke ukwuu	Mkpuchi ubi okpomọkụ, CZ Monocrystalline Silicon