Gutwikirwa na CVD

Imyambaro ya CVD yo gutunganya ibikoresho bya semiconductor bigezweho

Irangi ryacu rya Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), na Pyrolytic Carbon (PyC) ryakozwe mu nganda zikomeye zikora ibikoresho bya semiconductor, ritanga ubushobozi bwo kudakora neza, ubushyuhe bukabije, kandi ritanga ubuziranenge bukabije (<5 ppm). Ryakozwe kugira ngo ririnde grafiti na ceramics bifite ubuziranenge buhanitse kuva kuri plasma ikomeye, imyuka ikora neza, ndetse n'ubushyuhe bwinshi, irangi ryacu rihanitse rigabanya umusaruro w'uduce duto kandi rikongera igihe cyo kubaho cy'ibice muriSilicon/SiC Epitaxy, MOCVD, Plasma Etching, na Monocrystal Growthporogaramu.

Ubuziranenge buri hejuru cyane (< 5 ppm)

Imyanda mike y’icyuma yemejwe na GDMS kugira ngo hirindwe kwanduzwa kwa wafer mu bikorwa by’ingenzi.

Ubudahangarwa bw'ikirenga bwa Plasma na Gazi

Imiterere y'ubucucike bunini burinda plasma ya halogen (CF₄, NF₃, Cl₂) n'imyuka ihumanya.

Guhuza Ubushyuhe Bwiza

Kugenzura neza CTE bikuraho gucikagurika no gusibangana kw'ibice mu gihe cy'ubushyuhe bukabije.

Ubwoko bwo gupfuka	Akamaro k'ingenzi mu bya tekiniki	Ikoreshwa ry'Inzira y'ibanze
Ubwikorezi bwa CVD SiC	Ubushobozi bwo gutwara ubushyuhe bwinshi, kurwanya isuri mu maraso neza	Dry Etch, Si Epitaxy, MOCVD, Crystal Growth
Ubwikorezi bwa CVD TaC	Ubudahangarwa bukabije bw'ubushyuhe (>2000°C), uruzitiro rwa H₂/SiH₄	SiC Epitaxy, Iterambere rya SiC PVT rya Single-Crystal
Igipfukisho cya PyC	Gufunga gaze yo mu kirere, ubuso bwa karuboni isanzwe ikoze mu buryo bworoshye cyane	Gukingira ubushyuhe, CZ Monocrystalline Silicon