Ana amfani da sansanonin graphite masu rufi na SiC don tallafawa da kuma dumama abubuwan da ke cikin kristal guda ɗaya a cikin kayan aikin adana tururin ƙarfe-organic (MOCVD). Kwanciyar hankali na zafi, daidaiton zafi da sauran sigogin aiki na tushen graphite mai rufi na SiC suna taka muhimmiyar rawa a cikin ingancin haɓakar kayan epitaxial, don haka shine babban ɓangaren kayan aikin MOCVD.
A cikin tsarin ƙera wafer, an ƙara gina layukan epitaxial akan wasu ƙananan wafer don sauƙaƙe ƙera na'urori. Na'urorin da ke fitar da haske na LED na yau da kullun suna buƙatar shirya layukan epitaxial na GaAs akan ƙananan silicon; Ana shuka Layer ɗin epitaxial na SiC akan ƙaramin SiC don gina na'urori kamar SBD, MOSFET, da sauransu, don babban ƙarfin lantarki, babban wutar lantarki da sauran aikace-aikacen wutar lantarki; Layer ɗin epitaxial na GaN an gina shi akan ƙaramin SiC don ƙara gina HEMT da sauran na'urori don aikace-aikacen RF kamar sadarwa. Wannan tsari ba zai iya rabuwa da kayan aikin CVD ba.
A cikin kayan aikin CVD, ba za a iya sanya substrate kai tsaye a kan ƙarfe ba ko kuma kawai a sanya shi a kan tushe don ajiyar epitaxial, saboda yana ɗauke da kwararar iskar gas (kwance, a tsaye), zafin jiki, matsin lamba, gyarawa, zubar da gurɓatattun abubuwa da sauran fannoni na abubuwan da ke haifar da tasiri. Saboda haka, ya zama dole a yi amfani da tushe, sannan a sanya substrate a kan faifai, sannan a yi amfani da fasahar CVD don adana epitaxial akan substrate, wanda shine tushen graphite mai rufi na SiC (wanda kuma aka sani da tire).
Ana amfani da sansanonin graphite masu rufi na SiC don tallafawa da kuma dumama abubuwan da ke cikin kristal guda ɗaya a cikin kayan aikin adana tururin ƙarfe-organic (MOCVD). Kwanciyar hankali na zafi, daidaiton zafi da sauran sigogin aiki na tushen graphite mai rufi na SiC suna taka muhimmiyar rawa a cikin ingancin haɓakar kayan epitaxial, don haka shine babban ɓangaren kayan aikin MOCVD.
Tacewar tururin sinadarai na ƙarfe (MOCVD) ita ce babbar fasahar da ake amfani da ita wajen haɓaka fina-finan GaN a cikin shuɗin LED. Tana da fa'idodin aiki mai sauƙi, saurin girma mai sarrafawa da kuma tsaftar fina-finan GaN. A matsayin muhimmin sashi a cikin ɗakin amsawa na kayan aikin MOCVD, tushen ɗaukar nauyi da ake amfani da shi don haɓakar epitaxial na fim ɗin GaN yana buƙatar samun fa'idodin juriyar zafi mai yawa, daidaitaccen yanayin zafi, kwanciyar hankali na sinadarai, juriyar girgiza mai ƙarfi, da sauransu. Kayan Graphite na iya cika sharuɗɗan da ke sama.
A matsayin ɗaya daga cikin muhimman abubuwan da ke cikin kayan aikin MOCVD, tushen graphite shine mai ɗaukar kaya da kuma jikin dumama na substrate, wanda ke ƙayyade daidaito da tsarkin kayan fim ɗin kai tsaye, don haka ingancinsa yana shafar shirye-shiryen takardar epitaxial kai tsaye, kuma a lokaci guda, tare da ƙaruwar yawan amfani da canjin yanayin aiki, yana da sauƙin sawa, mallakar abubuwan da ake amfani da su.
Duk da cewa graphite yana da kyakkyawan yanayin zafi da kwanciyar hankali, yana da fa'ida mai kyau a matsayin tushen kayan aikin MOCVD, amma a cikin tsarin samarwa, graphite zai lalata foda saboda ragowar iskar gas mai lalata da sinadarai masu ƙarfe, kuma tsawon rayuwar tushen graphite zai ragu sosai. A lokaci guda, faɗuwar foda mai graphite zai haifar da gurɓatawa ga guntu.
Fitowar fasahar rufewa na iya samar da gyara foda a saman, haɓaka kwararar zafi, da daidaita rarraba zafi, wanda ya zama babban fasahar magance wannan matsala. Tushen graphite a cikin kayan aiki na MOCVD yana amfani da muhalli, murfin saman graphite ya kamata ya cika waɗannan halaye:
(1) Ana iya naɗe tushen graphite gaba ɗaya, kuma yawansa yana da kyau, in ba haka ba tushen graphite yana da sauƙin lalacewa a cikin iskar gas mai lalata.
(2) Ƙarfin haɗin gwiwa tare da tushen graphite yana da girma don tabbatar da cewa murfin ba shi da sauƙin faɗuwa bayan zagayowar zafin jiki mai yawa da ƙarancin zafin jiki da yawa.
(3) Yana da kyakkyawan daidaiton sinadarai don guje wa lalacewar shafi a cikin yanayin zafi mai yawa da kuma yanayin lalata.
SiC yana da fa'idodin juriyar tsatsa, yawan watsa zafi, juriyar girgizar zafi da kuma kwanciyar hankali mai yawa na sinadarai, kuma yana iya aiki da kyau a cikin yanayin epitaxial na GaN. Bugu da ƙari, ƙimar faɗaɗa zafi na SiC ba ta bambanta sosai da na graphite ba, don haka SiC shine kayan da aka fi so don rufin saman tushen graphite.
A halin yanzu, SiC da aka fi amfani da shi galibi nau'in 3C, 4H da 6H ne, kuma amfani da SiC na nau'ikan lu'ulu'u daban-daban ya bambanta. Misali, 4H-SiC na iya ƙera na'urori masu ƙarfi; 6H-SiC shine mafi karko kuma yana iya ƙera na'urorin lantarki na lantarki; Saboda tsarinsa iri ɗaya da GaN, ana iya amfani da 3C-SiC don samar da layin epitaxial na GaN da kuma ƙera na'urorin SiC-GaN RF. 3C-SiC kuma ana kiransa β-SiC, kuma muhimmin amfani da β-SiC shine kayan fim da rufi, don haka β-SiC a halin yanzu shine babban kayan da ake amfani da shi don rufewa.
Lokacin Saƙo: Agusta-04-2023