Ishingiro rya grafiti ikozwe muri SiC rikunze gukoreshwa mu gushyigikira no gushyushya substrates za kristale imwe mu bikoresho bya metal-organic chemical vapor deposition (MOCVD). Ubushyuhe buhamye, ubushyuhe bungana n'ibindi bipimo by'imikorere bya SiC bifite uruhare runini mu mikurire y'ibikoresho bya epitaxial, bityo ni cyo gice cy'ingenzi cy'ibikoresho bya MOCVD.
Mu gikorwa cyo gukora wafer, epitaxial layers zubakwa kuri substrate zimwe na zimwe za wafer kugira ngo byorohereze gukora ibikoresho. Ibikoresho bisanzwe bitanga urumuri rwa LED bigomba gutegura epitaxial layers za GaAs kuri substrate za silicon; Urwego rwa epitaxial rwa SiC ruhingwa kuri substrate ya SiC iyobora amashanyarazi kugira ngo hubakwe ibikoresho nka SBD, MOSFET, nibindi, kugira ngo hubakwe voltage nyinshi, power nyinshi n'izindi ngufu; Urwego rwa epitaxial rwa GaN rwubakwa kuri substrate ya SiC ifite ubwikorezi buciriritse kugira ngo hubakwe HEMT n'ibindi bikoresho byo gukoresha RF nko gutumanaho. Iyi nzira ntishobora gutandukanywa n'ibikoresho bya CVD.
Mu bikoresho bya CVD, substrate ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe ku gice cyo hasi kugira ngo ishyirweho epitaxial, kuko ikubiyemo urujya n'uruza rwa gaze (rugororotse, ruhagaze), ubushyuhe, umuvuduko, guhagarara, gusenya imyanda n'ibindi bintu bigize ingaruka. Kubwibyo, ni ngombwa gukoresha ishingiro, hanyuma ugashyira substrate kuri disiki, hanyuma ugakoresha ikoranabuhanga rya CVD kugira ngo ishyirweho epitaxial ku gice cyo hasi, ari cyo shingiro rya grafiti ya SiC (izwi kandi ku izina rya tray).
Ishingiro rya grafiti ikozwe muri SiC rikunze gukoreshwa mu gushyigikira no gushyushya substrates za kristale imwe mu bikoresho bya metal-organic chemical vapor deposition (MOCVD). Ubushyuhe buhamye, ubushyuhe bungana n'ibindi bipimo by'imikorere bya SiC bifite uruhare runini mu mikurire y'ibikoresho bya epitaxial, bityo ni cyo gice cy'ingenzi cy'ibikoresho bya MOCVD.
Ikoreshwa mu gukura kw'umwuka w'ibinyabutabire mu byuma (MOCVD) ni ikoranabuhanga rikuru rituma filime za GaN zikura mu buryo bw'ubururu bwa LED. Rifite ibyiza byoroshye gukora, uburyo bwo gukura bugenzurwa kandi rikagira ubuziranenge bwinshi muri filime za GaN. Nk'igice cy'ingenzi mu cyumba cy'ibinyabutabire cy'ibikoresho bya MOCVD, icyuma gikoreshwa mu gukura kw'ibinyabutabire mu buryo bw'ubushyuhe bukabije kigomba kugira ibyiza byo kudashyuha cyane, gutwara ubushyuhe bumwe, kudahindagurika neza mu binyabutabire, kudashyuha cyane, nibindi. Ibikoresho bya Graphite bishobora kuzuza ibisabwa byavuzwe haruguru.
Kimwe mu bice by'ingenzi by'ibikoresho bya MOCVD, ishingiro rya grafiti ni ryo ritwara n'iry'ubushyuhe bw'icyuma gishyushya, rigena mu buryo butaziguye imiterere n'ubuziranenge bw'ibikoresho bya firime, bityo ubwiza bwabyo bugira ingaruka zitaziguye ku itegurwa ry'urupapuro rwa epitaxial, kandi icyarimwe, hamwe n'ubwiyongere bw'ikoreshwa n'impinduka z'imikorere, biroroshye cyane kwambara, bikaba biri mu bikoresho bikoreshwa.
Nubwo grafiti ifite ubushobozi bwo gutwara ubushyuhe n'ubudahangarwa, ifite akarusho gakomeye nk'igice cy'ibanze cy'ibikoresho bya MOCVD, ariko mu ikorwa ryayo, grafiti izangiza ifu bitewe n'ibisigazwa by'imyuka yangiza n'ibintu by'umwimerere by'icyuma, kandi igihe cyo gukora cy'ishingiro rya grafiti kizagabanuka cyane. Muri icyo gihe, ifu ya grafiti igwa izatera umwanda kuri chip.
Iterambere ry'ikoranabuhanga ryo gusiga rishobora gutanga uburyo bwo gufata ifu yo hejuru, kongera uburyo ubushyuhe butwara, no kuringaniza uburyo ubushyuhe bukwirakwira, ari na bwo bwabaye ikoranabuhanga nyamukuru ryo gukemura iki kibazo. Ishingiro rya grafiti mu bikoresho bya MOCVD, ishyirwa ry'ishingiro rya grafiti rigomba kuba ryujuje ibi bikurikira:
(1) Igishishwa cya grafiti gishobora gupfunyikwa neza, kandi ubucucike ni bwiza, bitabaye ibyo igishishwa cya grafiti cyoroshye kwangirika muri iyo gaze yangiza.
(2) Ingufu zivanze n'ishingiro rya grafiti ni nyinshi kugira ngo irangi ritakoroha kugwa nyuma y'ibihe byinshi by'ubushyuhe bwinshi n'ubushyuhe buke.
(3) Ifite ubushobozi bwo kudacika intege mu buryo bukabije kugira ngo yirinde ko irangi rigwa mu gihe cy'ubushyuhe bwinshi n'ikirere cyangiza.
SiC ifite ibyiza byo kudatwarwa n’ingufu, kudatwarwa n’ubushyuhe bwinshi, kudatwarwa n’ubushyuhe bwinshi ndetse no kudahungabana cyane mu binyabutabire, kandi ishobora gukora neza mu kirere cya GaN epitaxial. Byongeye kandi, ingano y’ubushyuhe ya SiC itandukanye cyane n’iya graphite, bityo SiC ni yo ikoreshwa cyane mu gutwikira ubuso bw’ishingiro rya graphite.
Muri iki gihe, SiC isanzwe ahanini ni ubwoko bwa 3C, 4H na 6H, kandi uburyo SiC ikoreshwa mu bwoko butandukanye bwa kristu buratandukanye. Urugero, 4H-SiC ishobora gukora ibikoresho bifite ingufu nyinshi; 6H-SiC ni yo ihamye cyane kandi ishobora gukora ibikoresho by'amashanyarazi; Kubera imiterere yayo isa na GaN, 3C-SiC ishobora gukoreshwa mu gukora urwego rwa GaN epitaxial no gukora ibikoresho bya SiC-GaN RF. 3C-SiC izwi kandi nka β-SiC, kandi ikoreshwa ry'ingenzi rya β-SiC ni nk'ibikoresho bya firime n'imvange, bityo β-SiC ubu ni yo mvange y'ingenzi.
Igihe cyo kohereza: Kanama-04-2023