SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Muburyo bwo gukora wafer, ibice bya epitaxial byongeye kubakwa kuri wafer substrate kugirango byoroherezwe gukora ibikoresho. Ibikoresho bisanzwe LED bitanga urumuri bigomba gutegura epitaxial layer ya GaAs kuri sisitemu ya silicon; Igice cya epitaxial ya SiC gihingwa kuri substrate ya SiC ikora kugirango yubake ibikoresho nka SBD, MOSFET, nibindi, kuri voltage nyinshi, amashanyarazi menshi hamwe nizindi mbaraga zikoreshwa; GaN epitaxial layer yubatswe kuri kimwe cya kabiri cyubatswe na SiC substrate kugirango irusheho kubaka HEMT nibindi bikoresho bikoreshwa na RF nko gutumanaho. Iyi nzira ntishobora gutandukana nibikoresho bya CVD.
Mu bikoresho bya CVD, insimburangingo ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe gusa ku musingi wo kwanduza epitaxial, kubera ko irimo imyuka ya gaze (itambitse, ihagaritse), ubushyuhe, umuvuduko, gukosorwa, kumena imyanda n’ibindi bintu bitera ingaruka. Niyo mpamvu, birakenewe gukoresha base, hanyuma ugashyira substrate kuri disiki, hanyuma ugakoresha tekinoroji ya CVD kugirango epitaxial deposition kuri substrate, ariryo shusho ya SiC ikozweho na grafite (izwi kandi nka tray).
SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Ibyuma biva mu bimera (MOCVD) nubuhanga bwibanze bwo gukura kwa epitaxial ya firime ya GaN muri LED yubururu. Ifite ibyiza byo gukora byoroshye, kugenzura umuvuduko wubwiyongere no kwera kwinshi kwa firime ya GaN. Nkibintu byingenzi mubyumba byakira ibikoresho bya MOCVD, urufatiro rukoreshwa mukuzamura epitaxial ya GaN ya firime rugomba kugira ibyiza byo guhangana nubushyuhe bwo hejuru, ubushyuhe bwumuriro umwe, ihindagurika ryimiti, imbaraga zikomeye zo guhangana nubushyuhe, nibindi.
Nka kimwe mu bintu by'ibanze bigize ibikoresho bya MOCVD, igishushanyo mbonera ni cyo gutwara no gushyushya umubiri wa substrate, igena mu buryo butaziguye uburinganire n'ubwuzuzanye bw'ibikoresho bya firime, bityo ubwiza bwayo bukagira ingaruka ku buryo butaziguye ku itegurwa ry'urupapuro rwa epitaxial, kandi icyarimwe, hamwe no kwiyongera k'umubare w'imikoreshereze no guhindura imiterere y'akazi, biroroshye cyane kwambara, bijyanye n'ibikoreshwa.
Nubwo grafite ifite ubushyuhe bwiza kandi butajegajega, ifite inyungu nziza nkibigize shingiro ryibikoresho bya MOCVD, ariko mugikorwa cyo kuyibyaza umusaruro, grafite izonona ifu kubera ibisigisigi bya gaze yangirika n’ibinyabuzima byuma, kandi ubuzima bwa serivisi ya base ya grafite buzagabanuka cyane. Mugihe kimwe, ifu ya grafite igwa bizatera umwanda kuri chip.
Kugaragara kwikoranabuhanga rya coating birashobora gutanga ifu yubutaka, kongera ubushyuhe bwumuriro, no kunganya ikwirakwizwa ryubushyuhe, ryabaye ikoranabuhanga nyamukuru ryo gukemura iki kibazo. Igishushanyo mbonera mubikoresho bya MOCVD koresha ibidukikije, igishushanyo mbonera cya grafite kigomba kuba cyujuje ibi bikurikira:
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(3) Ifite imiti ihamye kugirango yirinde gutwika ubushyuhe bukabije hamwe nikirere cyangirika.
SiC ifite ibyiza byo kurwanya ruswa, gutwara ubushyuhe bwinshi, kurwanya ubushyuhe bwumuriro hamwe n’imiti ihamye, kandi irashobora gukora neza mukirere cya GaN. Mubyongeyeho, coefficente yo kwagura ubushyuhe bwa SiC itandukanye cyane na grafite, bityo SiC nikintu cyatoranijwe kubutaka bwo hejuru bwa grafite.
Kugeza ubu, SiC isanzwe ni ubwoko bwa 3C, 4H na 6H, kandi SiC ikoresha ubwoko bwa kristu butandukanye. Kurugero, 4H-SiC irashobora gukora ibikoresho bifite ingufu nyinshi; 6H-SiC nicyo gihamye kandi gishobora gukora ibikoresho byamashanyarazi; Kubera imiterere isa na GaN, 3C-SiC irashobora gukoreshwa mugukora ibice bya epitaxial GaN no gukora ibikoresho bya SiC-GaN RF. 3C-SiC izwi kandi nka β-SiC, kandi gukoresha cyane β-SiC ni nka firime n'ibikoresho byo gutwikira, bityo β-SiC kuri ubu ni ibikoresho by'ingenzi byo gutwikira.
Igihe cyo kohereza: Kanama-04-2023