SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Mukuita kwekugadzira wafer, epitaxial layers inovakwazve pane mamwe wafer substrates kufambisa kugadzirwa kwemidziyo. Yakajairika LED mwenje-emitting michina inoda kugadzirira epitaxial layers yeGaAs pane silicon substrates; Iyo SiC epitaxial layer inokura pane conductive SiC substrate yekuvakwa kwemidziyo yakadai seSBD, MOSFET, nezvimwewo, kune yakakwira voltage, yakakwira ikozvino uye mamwe magetsi ekushandisa; GaN epitaxial layer inovakwa pane semi-insulated SiC substrate kuti ienderere mberi nekuvaka HEMT nemimwe michina yeRF application senge kutaurirana. Iyi nzira haiparadzaniswe kubva kuCVD michina.
Mumidziyo yeCVD, iyo substrate haigone kuiswa zvakananga pasimbi kana kungoiswa pachigadziko che epitaxial deposition, nekuti inosanganisira kuyerera kwegasi (yakatwasuka, yakatwasuka), tembiricha, kudzvanywa, kugadzirisa, kudurura zvinosvibisa uye zvimwe zvinhu zvinokonzeresa. Nokudaro, zvakakosha kushandisa chigadziko, uye wozoisa substrate pa diski, uye wozoshandisa teknolojia yeCVD kune epitaxial deposition pane substrate, iyo inonzi SiC yakavharidzirwa graphite base (inozivikanwawo setireyi).
SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Metal-organic chemical vapor deposition (MOCVD) ndiyo tekinoroji yakakura yekukura epitaxial kwemafirimu eGaN mublue LED. Iyo ine mabhenefiti ekushanda kuri nyore, kudzoreka kukura mwero uye kuchena kwakanyanya kwemafirimu eGaN. Sechikamu chakakosha mukamuri yekupindura yeMOCVD midziyo, iyo inotakura base inoshandiswa kuGaN film epitaxial kukura inoda kuva nezvakanakira kupisa kwekushisa kwepamusoro, yunifomu yekushisa conductivity, kunaka kwemakemikari kugadzikana, kusimba kwekupisa kwekushisa, etc. Graphite zvinhu zvinogona kusangana nemamiriro ezvinhu ari pamusoro apa.
Seimwe yezvikamu zvakakosha zveMOCVD midziyo, graphite base ndiyo inotakura uye inodziya muviri weiyo substrate, iyo inonyatso tarisa kufanana uye kuchena kweiyo firimu zvinhu, saka kunaka kwayo kunokanganisa zvakananga kugadzirira kwepepa epitaxial, uye panguva imwe chete, nekuwedzera kwenhamba yekushandiswa uye shanduko yemamiriro ekushanda, zviri nyore kwazvo kupfeka, zvezvinhu zvinodyiwa.
Kunyange zvazvo girafu ine yakanakisa yekupisa conductivity uye kugadzikana, ine mukana wakanaka sechikamu chechikamu cheMOCVD midziyo, asi mukugadzirwa kwekugadzira, graphite ichaparadza hupfu nekuda kwekusara kwegasi rinopisa uye zvisikwa zvesimbi, uye hupenyu hwebasa re graphite base huchaderedzwa zvikuru. Panguva imwecheteyo, kudonha kwe graphite powder kunokonzera kusvibiswa kune chip.
Kubuda kwekombiki tekinoroji kunogona kupa pamusoro pehupfu kugadzirisa, kuwedzera kupisa conductivity, uye kuenzana kupisa kugovera, iyo yave iyo huru tekinoroji yekugadzirisa dambudziko iri. Graphite base muMOCVD midziyo yekushandisa nharaunda, graphite base yekumusoro coating inofanirwa kusangana neanotevera maitiro:
(1) Chigadziko chegraphite chinogona kuputirwa zvizere, uye density yakanaka, kana zvisina kudaro girafu chigadziko chiri nyore kuputirwa mugasi rinopisa.
(2) Iko kusanganiswa kwesimba neiyo graphite base yakakwira kuti ive nechokwadi chekuti kupfekedza hakusi nyore kudonha mushure mekuwedzera tembiricha uye kuderera kwekushisa kutenderera.
(3) Iine kugadzikana kwakanaka kwekemikari kudzivirira kukanganisa kwekuputira mukupisa kwakanyanya uye mhepo inoparadza.
SiC ine zvakanakira corrosion resistance, high thermal conductivity, thermal shock resistance uye high chemical stability, uye inogona kushanda zvakanaka muGaN epitaxial atmosphere. Uye zvakare, iyo yekupisa yekuwedzera coefficient yeSiC inosiyana zvishoma kubva kune iyo yegraphite, saka SiC ndiyo inosarudzirwa zvinhu zvekuputira pamusoro pegraphite base.
Parizvino, iyo yakajairika SiC inonyanya 3C, 4H uye 6H mhando, uye iyo SiC inoshandisa emhando dzakasiyana dzekristaro dzakasiyana. Semuenzaniso, 4H-SiC inogona kugadzira michina ine simba guru; 6H-SiC ndiyo yakanyanya kugadzikana uye inogona kugadzira mapikicha emagetsi; Nekuda kwechimiro chayo chakafanana neGaN, 3C-SiC inogona kushandiswa kugadzira GaN epitaxial layer uye kugadzira SiC-GaN RF zvishandiso. 3C-SiC inowanzonziwo β-SiC, uye kushandiswa kwakakosha kwe β-SiC kwakafanana nefirimu uye kupfekedza zvinhu, saka β-SiC ikozvino ndiyo inonyanya kushandiswa kwekugadzira.
Nguva yekutumira: Aug-04-2023