Iziseko zegrafiti ezigqunywe yiSiC zisetyenziswa rhoqo ukuxhasa nokufudumeza ii-substrates zekristale enye kwizixhobo ze-metal-organic chemical vapor deposition (MOCVD). Uzinzo lobushushu, ukufana kobushushu kunye nezinye iiparameter zokusebenza kwesiseko segrafiti esigqunywe yiSiC zidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yinxalenye ephambili yezixhobo zeMOCVD.
Kwinkqubo yokwenziwa kwe-wafer, iileya ze-epitaxial zakhiwa ngakumbi kwezinye ii-wafer substrates ukuze kube lula ukwenziwa kwezixhobo. Izixhobo eziqhelekileyo ezikhupha ukukhanya kwe-LED kufuneka zilungiselele iileya ze-epitaxial ze-GaAs kwi-silicon substrates; Ileya ye-epitaxial ye-SiC ikhuliswa kwi-substrate ye-conductive SiC yokwakha izixhobo ezifana ne-SBD, i-MOSFET, njl.njl., ze-voltage ephezulu, i-current ephezulu kunye nezinye izicelo zamandla; Ileya ye-epitaxial ye-GaN yakhiwe kwi-substrate ye-SiC e-insulated ukuze kwakhiwe ngakumbi i-HEMT kunye nezinye izixhobo ze-RF applications ezifana nonxibelelwano. Le nkqubo ayinakwahlulwa kwizixhobo ze-CVD.
Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngqo kwisinyithi okanye ibekwe nje kwisiseko sokufakwa kwe-epitaxial, kuba ibandakanya ukuhamba kwegesi (ethe tye, ethe nkqo), ubushushu, uxinzelelo, ukuqina, ukuchitheka kokungcola kunye nezinye izinto ezichaphazelayo. Ke ngoko, kuyimfuneko ukusebenzisa isiseko, uze ubeke i-substrate kwidiski, uze usebenzise iteknoloji ye-CVD ukufaka i-epitaxial kwi-substrate, eyisiseko se-graphite esigqunywe yi-SiC (esaziwa ngokuba yi-tray).
Iziseko zegrafiti ezigqunywe yiSiC zisetyenziswa rhoqo ukuxhasa nokufudumeza ii-substrates zekristale enye kwizixhobo ze-metal-organic chemical vapor deposition (MOCVD). Uzinzo lobushushu, ukufana kobushushu kunye nezinye iiparameter zokusebenza kwesiseko segrafiti esigqunywe yiSiC zidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yinxalenye ephambili yezixhobo zeMOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) yeyona teknoloji iphambili yokukhula kwe-epitaxial yeefilimu ze-GaN kwi-LED eluhlaza okwesibhakabhaka. Inezibonelelo zokusebenza okulula, izinga lokukhula elilawulekayo kunye nobunyulu obuphezulu beefilimu ze-GaN. Njengenxalenye ebalulekileyo kwigumbi lokusabela lezixhobo ze-MOCVD, isiseko seebheringi esisetyenziselwa ukukhula kwe-epitaxial yefilimu ye-GaN kufuneka sibe neenzuzo zokumelana nobushushu obuphezulu, ukuqhuba kobushushu obufanayo, ukuzinza okuhle kweekhemikhali, ukumelana okunamandla kobushushu, njl. Izinto zeGraphite zinokuhlangabezana neemeko ezingentla.
Njengenye yezona zinto ziphambili kwizixhobo ze-MOCVD, isiseko segrafiti sisithwali kunye nomzimba wokufudumeza we-substrate, nto leyo emisela ngokuthe ngqo ukufana kunye nobunyulu bezinto zefilimu, ngoko ke umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye kwangaxeshanye, ngokwanda kwenani lokusetyenziswa kunye notshintsho lweemeko zokusebenza, kulula kakhulu ukuyinxiba, iyinxalenye yezinto ezisetyenziswayo.
Nangona i-graphite inomoya oqhuba kakuhle wobushushu kunye nozinzo, inenzuzo enkulu njengesiseko sezixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kuyidla ipowder ngenxa yentsalela yeegesi ezirhabaxa kunye nezinto eziphilayo zesinyithi, kwaye ubomi benkonzo yesiseko se-graphite buya kuncipha kakhulu. Kwangaxeshanye, umgubo we-graphite owelayo uya kubangela ungcoliseko kwi-chip.
Ukuvela kwetekhnoloji yokugquma kunokubonelela ngokulungiswa komgubo womphezulu, kuphucule ukuhanjiswa kobushushu, kwaye kulingane nokusasazwa kobushushu, nto leyo eye yaba yitekhnoloji ephambili yokusombulula le ngxaki. Isiseko segrafiti kwindawo yokusetyenziswa kwezixhobo ze-MOCVD, ukugquma komgangatho wegrafiti kufuneka kuhlangabezane nezi mpawu zilandelayo:
(1) Isiseko segrafiti singasongwa ngokupheleleyo, kwaye uxinano lulungile, kungenjalo isiseko segrafiti kulula ukusilahla kwigesi ebolileyo.
(2) Amandla okudibanisa nesiseko segrafiti aphezulu ukuqinisekisa ukuba ulusu alulula ukuwa emva kwemijikelo emininzi yobushushu obuphezulu kunye nobushushu obuphantsi.
(3) Izinzile kakuhle kwiikhemikhali ukuze iphephe ukungaphumeleli kokwaleka kwiqondo lobushushu eliphezulu kunye nomoya odlayo.
I-SiC ineengenelo zokuxhathisa ukugqwala, ukuqhuba okuphezulu kobushushu, ukumelana noxinzelelo lobushushu kunye nokuzinza okuphezulu kweekhemikhali, kwaye ingasebenza kakuhle kwi-atmosphere ye-GaN epitaxial. Ukongeza, i-coefficient yokwandisa ubushushu ye-SiC yahlukile kancinci kwi-graphite, ngoko ke i-SiC yeyona nto ikhethwayo yokugquma umphezulu wesiseko se-graphite.
Okwangoku, iSiC eqhelekileyo ikakhulu luhlobo lwe-3C, 4H kunye ne-6H, kwaye ukusetyenziswa kweSiC kwiintlobo ezahlukeneyo zekristale kwahlukile. Umzekelo, i-4H-SiC inokuvelisa izixhobo ezinamandla aphezulu; i-6H-SiC yeyona izinzileyo kwaye inokuvelisa izixhobo ze-photoelectric; Ngenxa yesakhiwo sayo esifana neGaN, i-3C-SiC ingasetyenziselwa ukuvelisa umaleko we-epitaxial weGaN kunye nokuvelisa izixhobo ze-SiC-GaN RF. I-3C-SiC ikwabizwa ngokuba yi-β-SiC, kwaye ukusetyenziswa okubalulekileyo kwe-β-SiC kukusetyenziswa kwefilimu kunye nezinto zokugquma, ngoko ke i-β-SiC okwangoku yeyona nto iphambili yokugquma.
Ixesha lokuthumela: Agasti-04-2023