Izisekelo ze-graphite ezimbozwe yi-SiC zivame ukusetshenziselwa ukusekela nokushisa ama-substrate e-single crystal emishinini ye-metal-organic chemical vapor deposition (MOCVD). Ukuzinza kokushisa, ukufana kokushisa kanye nezinye izilinganiso zokusebenza kwesisekelo se-graphite esimbozwe yi-SiC kudlala indima ebalulekile ekhwalithini yokukhula kwezinto ze-epitaxial, ngakho-ke yingxenye eyinhloko yemishini ye-MOCVD.
Enkambisweni yokukhiqiza i-wafer, izendlalelo ze-epitaxial zakhiwa kabanzi kwezinye izisendlalelo ze-wafer ukuze kube lula ukukhiqizwa kwamadivayisi. Amadivayisi ajwayelekile akhipha ukukhanya kwe-LED adinga ukulungiselela izendlalelo ze-epitaxial ze-GaAs kuma-substrate e-silicon; Isendlalelo se-epitaxial se-SiC sikhulela ku-substrate ye-conductive SiC ukuze kwakhiwe amadivayisi afana ne-SBD, i-MOSFET, njll., ukuze kusetshenziswe i-voltage ephezulu, i-current ephezulu kanye nezinye izinhlelo zokusebenza zamandla; Isendlalelo se-epitaxial se-GaN sakhiwe ku-substrate ye-SiC e-semi-insulated ukuze kwakhiwe i-HEMT kanye namanye amadivayisi ezinhlelo zokusebenza ze-RF njengokuxhumana. Le nqubo ayihlukaniseki nemishini ye-CVD.
Emishinini ye-CVD, i-substrate ayikwazi ukubekwa ngqo ensimbini noma ibekwe nje esisekelweni sokufakwa kwe-epitaxial, ngoba ihilela ukugeleza kwegesi (okuvundlile, okuqondile), izinga lokushisa, ingcindezi, ukuqina, ukuchithwa kokungcola kanye nezinye izici zezinto ezithonya. Ngakho-ke, kuyadingeka ukusebenzisa isisekelo, bese ubeka i-substrate kudiski, bese usebenzisa ubuchwepheshe be-CVD ukufaka i-epitaxial ku-substrate, okuyisisekelo se-graphite esimbozwe yi-SiC (esaziwa nangokuthi ithreyi).
Izisekelo ze-graphite ezimbozwe yi-SiC zivame ukusetshenziselwa ukusekela nokushisa ama-substrate e-single crystal emishinini ye-metal-organic chemical vapor deposition (MOCVD). Ukuzinza kokushisa, ukufana kokushisa kanye nezinye izilinganiso zokusebenza kwesisekelo se-graphite esimbozwe yi-SiC kudlala indima ebalulekile ekhwalithini yokukhula kwezinto ze-epitaxial, ngakho-ke yingxenye eyinhloko yemishini ye-MOCVD.
Ukufakwa komphunga wamakhemikhali ensimbi-organic (i-MOCVD) ubuchwepheshe obujwayelekile bokukhula kwe-epitaxial kwamafilimu e-GaN ku-LED eluhlaza okwesibhakabhaka. Inezinzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kanye nokuhlanzeka okuphezulu kwamafilimu e-GaN. Njengengxenye ebalulekile ekamelweni lokusabela lemishini ye-MOCVD, isisekelo sokuthwala esisetshenziselwa ukukhula kwe-epitaxial yefilimu ye-GaN sidinga ukuba nezinzuzo zokumelana nokushisa okuphezulu, ukuqhuba ukushisa okufanayo, ukuzinza okuhle kwamakhemikhali, ukumelana okunamandla kokushaqeka kokushisa, njll. Izinto ze-Graphite zingahlangabezana nezimo ezingenhla.
Njengenye yezingxenye eziyinhloko zemishini ye-MOCVD, isisekelo se-graphite siyisithwali kanye nomzimba wokushisa we-substrate, okunquma ngqo ukufana kanye nobumsulwa bezinto zefilimu, ngakho ikhwalithi yayo ithinta ngqo ukulungiswa kweshidi le-epitaxial, futhi ngesikhathi esifanayo, ngokwanda kwenani lokusetshenziswa kanye nokushintsha kwezimo zokusebenza, kulula kakhulu ukuyigqoka, okungokwezinto ezisetshenziswayo.
Nakuba i-graphite inokushisa okuhle kakhulu kanye nokuzinza, inenzuzo enhle njengengxenye eyisisekelo yemishini ye-MOCVD, kodwa enqubweni yokukhiqiza, i-graphite izogqwala i-powder ngenxa yezinsalela zamagesi agqwalisayo kanye nezinto eziphilayo zensimbi, futhi impilo yesevisi yesisekelo se-graphite izoncishiswa kakhulu. Ngesikhathi esifanayo, i-powder ye-graphite ewayo izobangela ukungcola ku-chip.
Ukuvela kobuchwepheshe bokumboza kunganikeza ukulungiswa kwempuphu ebusweni, kuthuthukise ukuhanjiswa kokushisa, futhi kulinganise ukusatshalaliswa kokushisa, okuye kwaba ubuchwepheshe obuyinhloko bokuxazulula le nkinga. Isisekelo se-graphite endaweni yokusetshenziswa kwemishini ye-MOCVD, ukumboza ubuso besisekelo se-graphite kufanele kuhlangabezane nezici ezilandelayo:
(1) Isisekelo se-graphite singasongwa ngokuphelele, futhi ubuningi buhle, ngaphandle kwalokho isisekelo se-graphite kulula ukusiguguleka kugesi egqwalisayo.
(2) Amandla okuhlanganiswa nesisekelo se-graphite aphezulu ukuqinisekisa ukuthi uqweqwe alulula ukuwa ngemva kwemijikelezo eminingana yokushisa okuphezulu kanye nokushisa okuphansi.
(3) Inamandla amahle okuqina kwamakhemikhali ukuze igweme ukwehluleka kokugqoka endaweni eshisa kakhulu kanye nomoya ogqwalayo.
I-SiC inezinzuzo zokumelana nokugqwala, ukuqhuba okuphezulu kokushisa, ukumelana nokushaqeka kokushisa kanye nokuqina okuphezulu kwamakhemikhali, futhi ingasebenza kahle emoyeni we-epitaxial we-GaN. Ngaphezu kwalokho, i-coefficient yokwandisa ukushisa ye-SiC ihluke kakhulu kweye-graphite, ngakho-ke i-SiC iyinto ekhethwayo yokugqoka ubuso besisekelo se-graphite.
Njengamanje, i-SiC evamile ikakhulukazi uhlobo lwe-3C, 4H kanye no-6H, futhi ukusetshenziswa kwe-SiC kwezinhlobo ezahlukene zekristalu kuhlukile. Isibonelo, i-4H-SiC ingakhiqiza amadivayisi anamandla aphezulu; i-6H-SiC iyona ezinzile kakhulu futhi ingakhiqiza amadivayisi e-photoelectric; Ngenxa yesakhiwo sayo esifana ne-GaN, i-3C-SiC ingasetshenziswa ukukhiqiza ungqimba lwe-epitaxial lwe-GaN kanye nokukhiqiza amadivayisi e-SiC-GaN RF. I-3C-SiC yaziwa nangokuthi i-β-SiC, futhi ukusetshenziswa okubalulekile kwe-β-SiC njengefilimu kanye nezinto zokumboza, ngakho-ke i-β-SiC okwamanje iyinto eyinhloko yokumboza.
Isikhathi sokuthunyelwe: Agasti-04-2023