PSS Etch Carrier

Short Description:


  • Place of Origin : China
  • Crystal Structure : FCCβ phase
  • Density : 3.21 g/cm;
  • Hardness : 2500 Vickers;
  • Grain Size: 2~10μm;
  • Chemical Purity: 99.99995%;
  • Heat Capacity: 640J·kg-1·K-1;
  • Sublimation Temperature: 2700℃;
  • Felexural Strength: 415 Mpa (RT 4-Point);
  • Young' s Modulus: 430 Gpa (4pt bend, 1300℃);
  • Thermal Expansion (C.T.E): 4.5 10-6K-1;
  • Thermal Conductivity: 300(W/MK);
  • Product Detail

    Product Tags

    Product Description

    Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

    Main features:

    1. High temperature oxidation resistance:

    the oxidation resistance is still very good when the temperature is as high as 1600 C.

    2. High purity : made by chemical vapor deposition under high temperature chlorination condition.

    3. Erosion resistance: high hardness, compact surface, fine particles.

    4. Corrosion resistance: acid, alkali, salt and organic reagents.

    Main Specifications of CVD-SIC Coating

    SiC-CVD Properties

    Crystal Structure FCC β phase
    Density g/cm ³ 3.21
    Hardness Vickers hardness 2500
    Grain Size μm 2~10
    Chemical Purity % 99.99995
    Heat Capacity J·kg-1 ·K-1 640
    Sublimation Temperature 2700
    Felexural Strength MPa  (RT 4-point) 415
    Young' s Modulus Gpa (4pt bend, 1300℃) 430
    Thermal Expansion (C.T.E) 10-6K-1 4.5
    Thermal conductivity (W/mK) 300

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